| Cleaning process and operating process for a cvd reactor S Leone, M Mauceri, G Abbondanza, D Crippa, G Valente, M Masi, F Preti | 444 | 2006 |
| 4H SiC epitaxial growth with chlorine addition F La Via, G Galvagno, G Foti, M Mauceri, S Leone, G Pistone, ... Chemical vapor deposition 12 (8‐9), 509-515, 2006 | 110 | 2006 |
| 4H-SiC epitaxial layer growth by trichlorosilane (TCS) F La Via, G Izzo, M Mauceri, G Pistone, G Condorelli, L Perdicaro, ... Journal of Crystal Growth 311 (1), 107-113, 2008 | 82 | 2008 |
| Advances in infrared photodetectors C Jagadish, S Gunapala, D Rhiger Elsevier, 2011 | 53 | 2011 |
| New approaches and understandings in the growth of cubic silicon carbide FL Via, M Zimbone, C Bongiorno, A La Magna, G Fisicaro, I Deretzis, ... Materials 14 (18), 5348, 2021 | 41 | 2021 |
| S. Leone, and G. Pistone D Crippa, GL Valente, A Ruggiero, L Neri, R Reitano, L Calcagno, G Foti, ... Mater. Sci. Forum 483 (485), 67, 2005 | 39 | 2005 |
| Silicon epitaxy D Crippa, DL Rode, M Masi (No Title), 2001 | 31 | 2001 |
| High growth rate process in a SiC horizontal CVD reactor using HCl F La Via, G Galvagno, F Roccaforte, F Giannazzo, S Di Franco, ... Microelectronic engineering 83 (1), 48-50, 2006 | 26 | 2006 |
| New achievements on CVD based methods for SIC epitaxial growth D Crippa, GL Valente, A Ruggiero, L Neri, R Reitano, L Calcagno, G Foti, ... Materials Science Forum 483, 67-72, 2005 | 26 | 2005 |
| New achievements on CVD based methods for SIC epitaxial growth D Crippa, GL Valente, A Ruggiero, L Neri, R Reitano, L Calcagno, G Foti, ... Materials Science Forum 483, 67-72, 2005 | 26 | 2005 |
| Paving the way toward the world's first 200mm SiC pilot line M Musolino, X Xu, H Wang, V Rengarajan, I Zwieback, G Ruland, ... Materials Science in Semiconductor Processing 135, 106088, 2021 | 25 | 2021 |
| Ultra low noise epitaxial 4H-SiC X-ray detectors G Bertuccio, S Caccia, F Nava, G Foti, D Puglisi, C Lanzieri, S Lavanga, ... Materials Science Forum 615, 845-848, 2009 | 21 | 2009 |
| Very high growth rate epitaxy processes with chlorine addition F La Via, S Leone, M Mauceri, G Pistone, G Condorelli, G Abbondanza, ... Materials science forum 556, 157-160, 2007 | 21 | 2007 |
| Very high growth rate epitaxy processes with chlorine addition F La Via, S Leone, M Mauceri, G Pistone, G Condorelli, G Abbondanza, ... Materials science forum 556, 157-160, 2007 | 21 | 2007 |
| Thick epitaxial layers growth by chlorine addition F La Via, G Izzo, M Camarda, G Abbondanza, D Crippa Materials Science Forum 615, 55-60, 2009 | 19 | 2009 |
| SiC-4H epitaxial layer growth using trichlorosilane (TCS) as silicon precursor S Leone, M Mauceri, G Pistone, G Abbondanza, F Portuese, G Abagnale, ... Materials science forum 527, 179-182, 2006 | 19 | 2006 |
| Epitaxial layers grown with HCl addition: A comparison with the standard process F La Via, G Galvagno, A Firrincieli, F Roccaforte, S Di Franco, A Ruggiero, ... Materials science forum 527, 163-166, 2006 | 18 | 2006 |
| 3C-SiC epitaxy on deeply patterned Si (111) substrates T Kreiliger, M Mauceri, M Puglisi, F Mancarella, F La Via, D Crippa, ... Materials Science Forum 858, 151-154, 2016 | 15 | 2016 |
| Defect reduction in epitaxial 3C-SiC on Si (001) and Si (111) by deep substrate patterning H von Känel, L Miglio, D Crippa, T Kreiliger, M Mauceri, M Puglisi, ... Materials Science Forum 821, 193-196, 2015 | 15 | 2015 |
| Three-dimensional epitaxial Si1-xGex, Ge and SiC crystals on deeply patterned Si substrates H von Känel, F Isa, CV Falub, EJ Barthazy, EM Gubler, D Chrastina, ... ECS Transactions 64 (6), 631, 2014 | 15 | 2014 |
Francesco La ViaCNR-IMM確認したメール アドレス: imm.cnr.it
