フォロー
Eiji Takeda
Eiji Takeda
Panasonic Holdings Corporation
確認したメール アドレス: jp.panasonic.com
タイトル
引用先
引用先
Surface plasmon polariton mediated photoluminescence from excitons in silicon nanocrystals
E Takeda, T Nakamura, M Fujii, S Miura, S Hayashi
Applied Physics Letters 89 (10), 101907, 2006
362006
Enhancement of photoluminescence from excitons in silicon nanocrystals via coupling to surface plasmon polaritons
E Takeda, M Fujii, T Nakamura, Y Mochizuki, S Hayashi
Journal of Applied Physics 102 (2), 2007
292007
Method for producing thin film transistor
E Takeda, T Kawashima
US Patent 9,691,906, 2017
72017
58.3: Invited Paper: Highly Reliable InGaZnO Thin Film Transistor Backplane for 55‐inch 4K2K Organic Light‐Emitting Diode Display
H Hayashi, Y Nakazaki, T Izumi, A Sasaki, T Nakamura, E Takeda, ...
SID Symposium Digest of Technical Papers 45 (1), 853-856, 2014
62014
Enhancement of radiative recombination rate of excitons in Si nanocrystals on Au Film
K Imakita, M Fujii, T Nakamura, S Miura, E Takeda, S Hayashi
Japanese Journal of Applied Physics 45 (8R), 6132, 2006
62006
Mechanisms for the degradation of phosphor excitation efficiency by short wavelength vacuum ultraviolet radiation in plasma discharge devices
E Takeda, T Zukawa, T Ishibashi, K Yoshino, Y Morita, M Fujii
Journal of Physics and Chemistry of Solids 124, 274-280, 2019
52019
Annealing process for recovery of carbonated (Mg,Ca) O protective layer for plasma discharge device
E Takeda, T Zukawa, T Tsujita, K Yoshino, Y Morita
Japanese Journal of Applied Physics 57 (9), 096001, 2018
52018
Method for producing plasma display panel
E Takeda, T Tsujita, J Hashimoto, M Gotou
US Patent 8,292,685, 2012
32012
Shrinkage and expansion of discharge areas in plasma discharge devices having complex oxide protective layers
E Takeda, T Zukawa, T Ishibashi, K Yoshino, N Kosugi, Y Morita, M Fujii
Journal of Physics and Chemistry of Solids 130, 172-179, 2019
12019
Method of evaluating thin-film transistor, method of manufacturing thin-film transistor, and thin-film transistor
E Takeda, T Saito
US Patent 10,230,003, 2019
12019
Method for producing plasma display panel
H Lin, T Zukawa, E Takeda, T Ishibashi, K Yoshino, K Nomoto, T Tsujita
US Patent App. 13/265,964, 2012
12012
Facilely Fabricated Zero-Bias Silicon-Based Plasmonic Photodetector in the Near-Infrared Region with a Schottky Barrier Properly Controlled by Nanoalloys
S Okamoto, K Kusada, Y Nomura, E Takeda, Y Inada, K Hisada, S Anada, ...
ACS Applied Materials & Interfaces, 2024
2024
Laser radar
H Noguchi, E Takeda
US Patent 11,624,809, 2023
2023
Laser radar
E Takeda, H Noguchi
US Patent 11,555,990, 2023
2023
Optical device
E Takeda, S Okamoto
US Patent App. 17/805,471, 2022
2022
Detection device and detection method
E Takeda
US Patent App. 17/523,583, 2022
2022
Silicon-based plasmonic photodetector in the near-infrared region with a Schottky barrier properly controlled by nanoalloys
S Okamoto, K Kusada, Y Nomura, E Takeda, Y Inada, K Hisada, S Anada, ...
2022
Laser radar
H NOGUCHI, E TAKEDA
2019
Development of Highly Reliable Plasma Discharge Devices with (Mg,Ca) O Protective Layers
E Takeda
Kobe University, 2019
2019
Organic EL element and method for manufacturing organic EL element
ABE Yuuki, K Yokota, Y Shinokawa, K Sugano, E Takeda
US Patent 10,026,795, 2018
2018
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