| Film forming method and film forming apparatus S Azumo, Y Kashiwagi, Y Morozumi, Y Wamura, K Harada, K Takahashi, ... US Patent 9,293,543, 2016 | 464 | 2016 |
| Synchrotron x-ray photoelectron spectroscopy study on thermally grown SiO2/4H-SiC (0001) interface and its correlation with electrical properties H Watanabe, T Hosoi, T Kirino, Y Kagei, Y Uenishi, A Chanthaphan, ... Applied Physics Letters 99 (2), 2011 | 158 | 2011 |
| Origin of flatband voltage shift and unusual minority carrier generation in thermally grown GeO2/Ge metal-oxide-semiconductor devices T Hosoi, K Kutsuki, G Okamoto, M Saito, T Shimura, H Watanabe Applied Physics Letters 94 (20), 2009 | 114 | 2009 |
| Comprehensive study on initial thermal oxidation of GaN (0001) surface and subsequent oxide growth in dry oxygen ambient T Yamada, J Ito, R Asahara, K Watanabe, M Nozaki, S Nakazawa, Y Anda, ... Journal of applied physics 121 (3), 2017 | 98 | 2017 |
| Improved interface properties of GaN-based metal-oxide-semiconductor devices with thin Ga-oxide interlayers T Yamada, J Ito, R Asahara, K Watanabe, M Nozaki, T Hosoi, T Shimura, ... Applied Physics Letters 110 (26), 2017 | 62 | 2017 |
| Germanium oxynitride gate dielectrics formed by plasma nitridation of ultrathin thermal oxides on Ge (100) K Kutsuki, G Okamoto, T Hosoi, T Shimura, H Watanabe Applied Physics Letters 95 (2), 2009 | 62 | 2009 |
| Study of SiO2/4H-SiC interface nitridation by post-oxidation annealing in pure nitrogen gas A Chanthaphan, T Hosoi, T Shimura, H Watanabe AIP Advances 5 (9), 2015 | 57 | 2015 |
| Effect of nitrogen incorporation into Al-based gate insulators in AlON/AlGaN/GaN metal–oxide–semiconductor structures R Asahara, M Nozaki, T Yamada, J Ito, S Nakazawa, M Ishida, T Ueda, ... Applied Physics Express 9 (10), 101002, 2016 | 56 | 2016 |
| Investigation of unusual mobile ion effects in thermally grown SiO2 on 4H-SiC (0001) at high temperatures A Chanthaphan, T Hosoi, S Mitani, Y Nakano, T Nakamura, T Shimura, ... Applied Physics Letters 100 (25), 2012 | 56 | 2012 |
| Fabrication of local Ge-on-insulator structures by lateral liquid-phase epitaxy: effect of controlling interface energy between Ge and insulators on lateral epitaxial growth T Hashimoto, C Yoshimoto, T Hosoi, T Shimura, H Watanabe Applied Physics Express 2 (6), 066502, 2009 | 56 | 2009 |
| A new model of time evolution of gate leakage current after soft breakdown in ultra-thin gate oxides T Hosoi, PL Re, Y Kamakura, K Taniguchi Digest. International Electron Devices Meeting,, 155-158, 2002 | 50 | 2002 |
| Ultrahigh-temperature rapid thermal oxidation of 4H-SiC (0001) surfaces and oxidation temperature dependence of SiO2/SiC interface properties T Hosoi, D Nagai, M Sometani, Y Katsu, H Takeda, T Shimura, M Takei, ... Applied Physics Letters 109 (18), 2016 | 49 | 2016 |
| Control of Ga-oxide interlayer growth and Ga diffusion in SiO2/GaN stacks for high-quality GaN-based metal–oxide–semiconductor devices with improved gate dielectric reliability T Yamada, K Watanabe, M Nozaki, H Yamada, T Takahashi, M Shimizu, ... Applied Physics Express 11 (1), 015701, 2017 | 48 | 2017 |
| X-ray phase contrast imaging by compact Talbot–Lau interferometer with a single transmission grating N Morimoto, S Fujino, K Ohshima, J Harada, T Hosoi, H Watanabe, ... Optics letters 39 (15), 4297-4300, 2014 | 47 | 2014 |
| Figuring and smoothing capabilities of elastic emission machining for low-thermal-expansion glass optics M Kanaoka, C Liu, K Nomura, M Ando, H Takino, Y Fukuda, H Mimura, ... Journal of Vacuum Science & Technology B: Microelectronics and Nanometer …, 2007 | 47 | 2007 |
| First-principles study to obtain evidence of low interface defect density at Ge/GeO2 interfaces S Saito, T Hosoi, H Watanabe, T Ono Applied Physics Letters 95 (1), 2009 | 46 | 2009 |
| Water Growth on GeO2/Ge(100) Stack and Its Effect on the Electronic Properties of GeO2 A Mura, I Hideshima, Z Liu, T Hosoi, H Watanabe, K Arima The Journal of Physical Chemistry C 117 (1), 165-171, 2013 | 44 | 2013 |
| Impact of NO annealing on flatband voltage instability due to charge trapping in SiС MOS devices Y Katsu, T Hosoi, Y Nanen, T Kimoto, T Shimura, H Watanabe Materials Science Forum 858, 599-602, 2016 | 40 | 2016 |
| Hard x-ray phase contrast imaging using a tabletop Talbot–Lau interferometer with multiline embedded x-ray targets T Shimura, N Morimoto, S Fujino, T Nagatomi, K Oshima, J Harada, ... Optics Letters 38 (2), 157-159, 2013 | 40 | 2013 |
| Controlled oxide interlayer for improving reliability of SiO2/GaN MOS devices T Yamada, D Terashima, M Nozaki, H Yamada, T Takahashi, M Shimizu, ... Japanese journal of applied physics 58 (SC), SCCD06, 2019 | 37 | 2019 |
