Takuji Hosoi
Cited by
Cited by
Film forming method and film forming apparatus
S Azumo, Y Kashiwagi, Y Morozumi, Y Wamura, K Harada, K Takahashi, ...
US Patent 9,293,543, 2016
Synchrotron x-ray photoelectron spectroscopy study on thermally grown SiO2/4H-SiC (0001) interface and its correlation with electrical properties
H Watanabe, T Hosoi, T Kirino, Y Kagei, Y Uenishi, A Chanthaphan, ...
Applied Physics Letters 99 (2), 2011
Origin of flatband voltage shift and unusual minority carrier generation in thermally grown GeO2/Ge metal-oxide-semiconductor devices
T Hosoi, K Kutsuki, G Okamoto, M Saito, T Shimura, H Watanabe
Applied Physics Letters 94 (20), 2009
Comprehensive study on initial thermal oxidation of GaN (0001) surface and subsequent oxide growth in dry oxygen ambient
T Yamada, J Ito, R Asahara, K Watanabe, M Nozaki, S Nakazawa, Y Anda, ...
Journal of applied physics 121 (3), 2017
Germanium oxynitride gate dielectrics formed by plasma nitridation of ultrathin thermal oxides on Ge (100)
K Kutsuki, G Okamoto, T Hosoi, T Shimura, H Watanabe
Applied Physics Letters 95 (2), 2009
Improved interface properties of GaN-based metal-oxide-semiconductor devices with thin Ga-oxide interlayers
T Yamada, J Ito, R Asahara, K Watanabe, M Nozaki, T Hosoi, T Shimura, ...
Applied Physics Letters 110 (26), 2017
Fabrication of local Ge-on-insulator structures by lateral liquid-phase epitaxy: effect of controlling interface energy between Ge and insulators on lateral epitaxial growth
T Hashimoto, C Yoshimoto, T Hosoi, T Shimura, H Watanabe
Applied Physics Express 2 (6), 066502, 2009
Effect of nitrogen incorporation into Al-based gate insulators in AlON/AlGaN/GaN metal–oxide–semiconductor structures
R Asahara, M Nozaki, T Yamada, J Ito, S Nakazawa, M Ishida, T Ueda, ...
Applied Physics Express 9 (10), 101002, 2016
Investigation of unusual mobile ion effects in thermally grown SiO2 on 4H-SiC (0001) at high temperatures
A Chanthaphan, T Hosoi, S Mitani, Y Nakano, T Nakamura, T Shimura, ...
Applied Physics Letters 100 (25), 2012
A new model of time evolution of gate leakage current after soft breakdown in ultra-thin gate oxides
T Hosoi, PL Re, Y Kamakura, K Taniguchi
Digest. International Electron Devices Meeting,, 155-158, 2002
Study of SiO2/4H-SiC interface nitridation by post-oxidation annealing in pure nitrogen gas
A Chanthaphan, T Hosoi, T Shimura, H Watanabe
AIP Advances 5 (9), 2015
X-ray phase contrast imaging by compact Talbot–Lau interferometer with a single transmission grating
N Morimoto, S Fujino, K Ohshima, J Harada, T Hosoi, H Watanabe, ...
Optics letters 39 (15), 4297-4300, 2014
Ultrahigh-temperature rapid thermal oxidation of 4H-SiC (0001) surfaces and oxidation temperature dependence of SiO2/SiC interface properties
T Hosoi, D Nagai, M Sometani, Y Katsu, H Takeda, T Shimura, M Takei, ...
Applied Physics Letters 109 (18), 2016
Water Growth on GeO2/Ge(100) Stack and Its Effect on the Electronic Properties of GeO2
A Mura, I Hideshima, Z Liu, T Hosoi, H Watanabe, K Arima
The Journal of Physical Chemistry C 117 (1), 165-171, 2013
Figuring and smoothing capabilities of elastic emission machining for low-thermal-expansion glass optics
M Kanaoka, C Liu, K Nomura, M Ando, H Takino, Y Fukuda, H Mimura, ...
Journal of Vacuum Science & Technology B: Microelectronics and Nanometer c, 2007
Control of Ga-oxide interlayer growth and Ga diffusion in SiO2/GaN stacks for high-quality GaN-based metal–oxide–semiconductor devices with improved gate dielectric reliability
T Yamada, K Watanabe, M Nozaki, H Yamada, T Takahashi, M Shimizu, ...
Applied Physics Express 11 (1), 015701, 2017
First-principles study to obtain evidence of low interface defect density at Ge/GeO2 interfaces
S Saito, T Hosoi, H Watanabe, T Ono
Applied Physics Letters 95 (1), 2009
Hard x-ray phase contrast imaging using a tabletop Talbot–Lau interferometer with multiline embedded x-ray targets
T Shimura, N Morimoto, S Fujino, T Nagatomi, K Oshima, J Harada, ...
Optics Letters 38 (2), 157-159, 2013
Impact of NO annealing on flatband voltage instability due to charge trapping in SiR MOS devices
Y Katsu, T Hosoi, Y Nanen, T Kimoto, T Shimura, H Watanabe
Materials Science Forum 858, 599-602, 2016
Characteristics of pure Ge3N4 dielectric layers formed by high-density plasma nitridation
K Kutsuki, G Okamoto, T Hosoi, T Shimura, H Watanabe
Japanese journal of applied physics 47 (4S), 2415, 2008
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