| Monolithic GaN-on-Si half-bridge circuit with integrated freewheeling diodes R Reiner, P Waltereit, B Weiss, M Wespel, M Mikulla, R Quay, ... PCIM Europe 2016; International Exhibition and Conference for Power …, 2016 | 153 | 2016 |
| Monolithically integrated power circuits in high‐voltage GaN‐on‐Si heterojunction technology R Reiner, P Waltereit, B Weiss, S Moench, M Wespel, S Müller, R Quay, ... IET Power Electronics 11 (4), 681-688, 2018 | 52 | 2018 |
| Substrate biasing effects in a high-voltage, monolithically-integrated half-bridge GaN-Chip B Weiss, R Reiner, V Polyakov, P Waltereit, R Quay, O Ambacher, ... 2017 IEEE 5th Workshop on Wide Bandgap Power Devices and Applications (WiPDA …, 2017 | 42 | 2017 |
| Integrated reverse-diodes for GaN-HEMT structures R Reiner, P Waltereit, B Weiss, M Wespel, R Quay, M Schlechtweg, ... 2015 IEEE 27th International Symposium on Power Semiconductor Devices & IC's …, 2015 | 40 | 2015 |
| Soft-switching 3 MHz converter based on monolithically integrated half-bridge GaN-chip B Weiss, R Reiner, P Waltereit, R Quay, O Ambacher, A Sepahvand, ... Wide Bandgap Power Devices and Applications (WiPDA), 2016 IEEE 4th Workshop …, 2016 | 37 | 2016 |
| Monolithic integrated quasi-normally-off gate driver and 600 V GaN-on-Si HEMT S Moench, M Costa, A Barner, I Kallfass, R Reiner, B Weiss, P Waltereit, ... 2015 IEEE 3rd Workshop on Wide Bandgap Power Devices and Applications (WiPDA …, 2015 | 37 | 2015 |
| Investigation of GaN-HEMTs in reverse conduction R Reiner, P Waltereit, B Weiss, R Quay, O Ambacher PCIM Europe 2017; International Exhibition and Conference for Power …, 2017 | 24 | 2017 |
| Operation of PCB-embedded, high-voltage multilevel-converter GaN-IC B Weiss, R Reiner, P Waltereit, R Quay, O Ambacher 2017 IEEE 5th Workshop on Wide Bandgap Power Devices and Applications (WiPDA …, 2017 | 22 | 2017 |
| Linear temperature sensors in high-voltage GaN-HEMT power devices R Reiner, P Waltereit, B Weiss, M Wespel, D Meder, M Mikulla, R Quay, ... 2016 IEEE Applied Power Electronics Conference and Exposition (APEC), 2083-2086, 2016 | 22 | 2016 |
| Effect of substrate termination on switching loss and switching time using 600 V GaN-on-Si HEMTs with integrated gate driver in half-bridges S Moench, R Reiner, B Weiss, P Waltereit, R Quay, O Ambacher, ... 2017 IEEE 5th Workshop on Wide Bandgap Power Devices and Applications (WiPDA …, 2017 | 21 | 2017 |
| Single-input GaN gate driver based on depletion-mode logic integrated with a 600 V GaN-on-Si power transistor S Moench, I Kallfass, R Reiner, B Weiss, P Waltereit, R Quay, ... 2016 IEEE 4th workshop on wide bandgap power devices and applications (WiPDA …, 2016 | 17 | 2016 |
| Monolithically-integrated mulitlevel inverter on lateral GaN-on-Si technology for high-voltage applications B Weiss, R Reiner, P Waltereit, S Muller, M Wespel, R Quay, O Ambacher 2015 IEEE Compound Semiconductor Integrated Circuit Symposium (CSICS), 1-4, 2015 | 16 | 2015 |
| PCB-embedding for GaN-on-Si power devices and ICs R Reiner, B Weiss, D Meder, P Waltereit, T Gerrer, R Quay, ... CIPS 2018; 10th International Conference on Integrated Power Electronics …, 2018 | 13 | 2018 |
| Quasi-normally-off GaN gate driver for high slew-rate d-mode GaN-on-Si HEMTs S Mönch, M Costa, A Barner, I Kallfass, R Reiner, B Weiss, P Waltereit, ... 2015 IEEE 27th International Symposium on Power Semiconductor Devices & IC's …, 2015 | 12 | 2015 |
| High-voltage stress time-dependent dispersion effects in AlGaN/GaN HEMTs M Wespel, M Dammann, V Polyakov, R Reiner, P Waltereit, B Weiss, ... 2015 IEEE International Reliability Physics Symposium, CD. 2.1-CD. 2.5, 2015 | 12 | 2015 |
| Analysis and modeling of GaN-based multi field plate Schottky power diodes B Weiss, R Reiner, P Waltereit, R Quay, O Ambacher 2016 IEEE 17th Workshop on Control and Modeling for Power Electronics …, 2016 | 11 | 2016 |
| Multi-stage cascode in high-voltage AlGaN/GaN-on-Si technology R Reiner, P Waltereit, S Moench, M Dammann, B Weiss, R Quay, ... 2018 IEEE 6th Workshop on Wide Bandgap Power Devices and Applications (WiPDA …, 2018 | 10 | 2018 |
| Towards highly-integrated high-voltage multi-MHz GaN-on-Si power ICs and modules S Moench, R Reiner, B Weiss, P Waltereit, R Quay, T Kaden, O Ambacher, ... PCIM Europe 2018; International Exhibition and Conference for Power …, 2018 | 10 | 2018 |
| Switching frequency modulation for GaN-based power converters B Weiss, R Reiner, R Quay, P Waltereit, F Benkhelifa, M Mikulla, ... 2015 IEEE Energy Conversion Congress and Exposition (ECCE), 4361-4366, 2015 | 10 | 2015 |
| Si-substrate removal for AlGaN/GaN devices on PCB carriers R Reiner, T Gerrer, B Weiss, P Waltereit, S Moench, D Meder, M Sinnwell, ... 2020 32nd International Symposium on Power Semiconductor Devices and ICs …, 2020 | 8 | 2020 |
Rudiger (Rüdiger) QuayFraunhofer IAF, Albert Ludwigs Universität Freiburg確認したメール アドレス: ieee.org
