Keisuke Ide
タイトル引用先
Effects of excess oxygen on operation characteristics of amorphous In-Ga-Zn-O thin-film transistors
K Ide, Y Kikuchi, K Nomura, M Kimura, T Kamiya, H Hosono
Applied Physics Letters 99 (9), 093507, 2011
1542011
Structural relaxation in amorphous oxide semiconductor, a-In-Ga-Zn-O
K Ide, K Nomura, H Hiramatsu, T Kamiya, H Hosono
Journal of Applied Physics 111 (7), 073513, 2012
702012
Effects of low-temperature ozone annealing on operation characteristics of amorphous In–Ga–Zn–O thin-film transistors
K Ide, Y Kikuchi, K Nomura, T Kamiya, H Hosono
Thin Solid Films 520 (10), 3787-3790, 2012
332012
Conversion of an ultra-wide bandgap amorphous oxide insulator to a semiconductor
J Kim, T Sekiya, N Miyokawa, N Watanabe, K Kimoto, K Ide, Y Toda, ...
NPG Asia Materials 9 (3), e359, 2017
322017
Solid phase epitaxial growth of high mobility La: BaSnO3 thin films co-doped with interstitial hydrogen
CA Niedermeier, S Rhode, S Fearn, K Ide, MA Moram, H Hiramatsu, ...
Applied Physics Letters 108 (17), 172101, 2016
242016
Effects of residual hydrogen in sputtering atmosphere on structures and properties of amorphous In-Ga-Zn-O thin films
H Tang, K Ishikawa, K Ide, H Hiramatsu, S Ueda, N Ohashi, H Kumomi, ...
Journal of Applied Physics 118 (20), 205703, 2015
222015
Electron effective mass and mobility limits in degenerate perovskite stannate
CA Niedermeier, S Rhode, K Ide, H Hiramatsu, H Hosono, T Kamiya, ...
Physical Review B 95 (16), 161202, 2017
192017
Electronic defects in amorphous oxide semiconductors: a review
K Ide, K Nomura, H Hosono, T Kamiya
physica status solidi (a) 216 (5), 1800372, 2019
172019
Effects of working pressure and annealing on bulk density and nanopore structures in amorphous In–Ga–Zn–O thin-film transistors
K Ide, M Kikuchi, M Ota, M Sasase, H Hiramatsu, H Kumomi, H Hosono, ...
Japanese Journal of Applied Physics 56 (3S), 03BB03, 2017
142017
Ultrawide band gap amorphous oxide semiconductor, Ga–Zn–O
J Kim, N Miyokawa, T Sekiya, K Ide, Y Toda, H Hiramatsu, H Hosono, ...
Thin Solid Films 614, 84-89, 2016
132016
Multiple roles of hydrogen treatments in amorphous In–Ga–Zn–O Films
H Tang, Y Kishida, K Ide, Y Toda, H Hiramatsu, S Matsuishi, S Ueda, ...
ECS Journal of Solid State Science and Technology 6 (7), P365-P372, 2017
112017
Effects of thermal annealing on elimination of deep defects in amorphous In–Ga–Zn–O thin-film transistors
H Tang, K Ide, H Hiramatsu, S Ueda, N Ohashi, H Kumomi, H Hosono, ...
Thin Solid Films 614, 73-78, 2016
112016
Room-temperature fabrication of light-emitting thin films based on amorphous oxide semiconductor
J Kim, N Miyokawa, K Ide, Y Toda, H Hiramatsu, H Hosono, T Kamiya
AIP Advances 6 (1), 015106, 2016
112016
Light irradiation history sensor using amorphous In-Ga-Zn-O thin-film transistor exposed to ozone annealing
M Kimura, T Hasegawa, K Ide, K Nomura, T Kamiya, H Hosono
IEEE Electron Device Letters 33 (3), 384-386, 2012
102012
SnS thin films prepared by H2S-free process and its p-type thin film transistor
FY Ran, Z Xiao, H Hiramatsu, K Ide, H Hosono, T Kamiya
AIP Advances 6 (1), 015112, 2016
92016
Maximum applied voltage detector using amorphous In–Ga–Zn–O thin-film transistor exposed to ozone annealing
M Kimura, T Hasegawa, K Ide, K Nomura, T Kamiya, H Hosono
Solid-State Electronics 75, 74-76, 2012
92012
Transparent amorphous oxide semiconductor thin film phosphor, In–Mg–O: Eu
J Kim, N Miyokawa, K Ide, H Hiramatsu, H Hosono, T Kamiya
Journal of the Ceramic Society of Japan 124 (5), 532-535, 2016
82016
Effects of Base Pressure on Growth and Optoelectronic Properties of Amorphous In‐Ga‐Zn‐O: Ultralow Optimum Oxygen Supply and Bandgap Widening
K Ide, K Ishikawa, H Tang, T Katase, H Hiramatsu, H Kumomi, H Hosono, ...
physica status solidi (a) 216 (5), 1700832, 2019
52019
Semiconductor device
IDE Keisuke, T Saitoh, Y Kanzaki, Y Takamaru, S Kaneko, H Matsukizono, ...
US Patent App. 15/318,622, 2017
52017
Semiconductor device and method for producing same
Y Kanzaki, S Kaneko, T Saitoh, Y Takamaru, IDE Keisuke
US Patent App. 15/117,524, 2016
5*2016
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論文 1–20