| Electronic defects in amorphous oxide semiconductors: A review K Ide, K Nomura, H Hosono, T Kamiya physica status solidi (a) 216 (5), 1800372, 2019 | 264 | 2019 |
| Effects of excess oxygen on operation characteristics of amorphous In-Ga-Zn-O thin-film transistors K Ide, Y Kikuchi, K Nomura, M Kimura, T Kamiya, H Hosono Applied Physics Letters 99 (9), 2011 | 248 | 2011 |
| Conversion of an ultra-wide bandgap amorphous oxide insulator to a semiconductor J Kim, T Sekiya, N Miyokawa, N Watanabe, K Kimoto, K Ide, Y Toda, ... NPG Asia materials 9 (3), e359-e359, 2017 | 121 | 2017 |
| Structural relaxation in amorphous oxide semiconductor, a-In-Ga-Zn-O K Ide, K Nomura, H Hiramatsu, T Kamiya, H Hosono Journal of Applied Physics 111 (7), 2012 | 119 | 2012 |
| Electron effective mass and mobility limits in degenerate perovskite stannate CA Niedermeier, S Rhode, K Ide, H Hiramatsu, H Hosono, T Kamiya, ... Physical Review B 95 (16), 161202, 2017 | 70 | 2017 |
| Effects of low-temperature ozone annealing on operation characteristics of amorphous In–Ga–Zn–O thin-film transistors K Ide, Y Kikuchi, K Nomura, T Kamiya, H Hosono Thin Solid Films 520 (10), 3787-3790, 2012 | 47 | 2012 |
| Solid phase epitaxial growth of high mobility La: BaSnO3 thin films co-doped with interstitial hydrogen CA Niedermeier, S Rhode, S Fearn, K Ide, MA Moram, H Hiramatsu, ... Applied Physics Letters 108 (17), 2016 | 45 | 2016 |
| Effects of residual hydrogen in sputtering atmosphere on structures and properties of amorphous In-Ga-Zn-O thin films H Tang, K Ishikawa, K Ide, H Hiramatsu, S Ueda, N Ohashi, H Kumomi, ... Journal of Applied Physics 118 (20), 2015 | 38 | 2015 |
| Shallow Valence Band of Rutile GeO2 and P-type Doping CA Niedermeier, K Ide, T Katase, H Hosono, T Kamiya The Journal of Physical Chemistry C 124 (47), 25721-25728, 2020 | 37 | 2020 |
| Multiple roles of hydrogen treatments in amorphous in–Ga–Zn–O films H Tang, Y Kishida, K Ide, Y Toda, H Hiramatsu, S Matsuishi, S Ueda, ... ECS Journal of Solid State Science and Technology 6 (7), P365, 2017 | 35 | 2017 |
| SnS thin films prepared by H2S-free process and its p-type thin film transistor FY Ran, Z Xiao, H Hiramatsu, K Ide, H Hosono, T Kamiya AIP Advances 6 (1), 2016 | 24 | 2016 |
| Electronic structure of interstitial hydrogen in In-Ga-Zn-O semiconductor simulated by muon KM Kojima, M Hiraishi, H Okabe, A Koda, R Kadono, K Ide, S Matsuishi, ... Applied Physics Letters 115 (12), 2019 | 23 | 2019 |
| Phonon scattering limited mobility in the representative cubic perovskite semiconductors , , and CA Niedermeier, Y Kumagai, K Ide, T Katase, F Oba, H Hosono, T Kamiya Physical Review B 101 (12), 125206, 2020 | 22 | 2020 |
| Effects of working pressure and annealing on bulk density and nanopore structures in amorphous In–Ga–Zn–O thin-film transistors K Ide, M Kikuchi, M Ota, M Sasase, H Hiramatsu, H Kumomi, H Hosono, ... Japanese Journal of Applied Physics 56 (3S), 03BB03, 2017 | 22 | 2017 |
| Effects of thermal annealing on elimination of deep defects in amorphous In–Ga–Zn–O thin-film transistors H Tang, K Ide, H Hiramatsu, S Ueda, N Ohashi, H Kumomi, H Hosono, ... Thin Solid Films 614, 73-78, 2016 | 22 | 2016 |
| Effects of Base Pressure on Growth and Optoelectronic Properties of Amorphous In]Ga]Zn]O: Ultralow Optimum Oxygen Supply and Bandgap Widening K Ide, K Ishikawa, H Tang, T Katase, H Hiramatsu, H Kumomi, H Hosono, ... physica status solidi (a) 216 (5), 1700832, 2019 | 21 | 2019 |
| Multiple Color Inorganic Thin]Film Phosphor, RE]Doped Amorphous Gallium Oxide (RE = Rare Earth: Pr, Sm, Tb, and Dy), Deposited at Room Temperature N Watanabe, K Ide, J Kim, T Katase, H Hiramatsu, H Hosono, T Kamiya physica status solidi (a) 216 (5), 1700833, 2019 | 20 | 2019 |
| Ultrawide band gap amorphous oxide semiconductor, Ga–Zn–O J Kim, N Miyokawa, T Sekiya, K Ide, Y Toda, H Hiramatsu, H Hosono, ... Thin Solid Films 614, 84-89, 2016 | 20 | 2016 |
| Semiconductor device IDE Keisuke, T Saitoh, Y Kanzaki, Y Takamaru, S Kaneko, H Matsukizono, ... US Patent App. 15/318,622, 2017 | 19 | 2017 |
| Degenerated Hole Doping and Ultra]Low Lattice Thermal Conductivity in Polycrystalline SnSe by Nonequilibrium Isovalent Te Substitution X He, H Zhang, T Nose, T Katase, T Tadano, K Ide, S Ueda, H Hiramatsu, ... Advanced Science 9 (13), 2105958, 2022 | 17 | 2022 |
Toshio KamiyaTokyo Institute of TechnologyVerified email at msl.titech.ac.jp
