| Long-wavelength InAs/GaAs quantum-dot laser diode monolithically grown on Ge substrate H Liu, T Wang, Q Jiang, R Hogg, F Tutu, F Pozzi, A Seeds Nature Photonics 5 (7), 416-419, 2011 | 408 | 2011 |
| Detection of single photons using a field-effect transistor gated by a layer of quantum dots AJ Shields, MP O’sullivan, I Farrer, DA Ritchie, RA Hogg, ML Leadbeater, ... Applied Physics Letters 76 (25), 3673-3675, 2000 | 206 | 2000 |
| Long-wavelength light emission and lasing from InAs∕ GaAs quantum dots covered by a GaAsSb strain-reducing layer HY Liu, MJ Steer, TJ Badcock, DJ Mowbray, MS Skolnick, P Navaretti, ... Applied Physics Letters 86 (14), 2005 | 167 | 2005 |
| Structural and optical properties of type II GaSb/GaAs self-assembled quantum dots grown by molecular beam epitaxy K Suzuki, RA Hogg, Y Arakawa Journal of applied physics 85 (12), 8349-8352, 1999 | 163 | 1999 |
| High-performance three-layer 1.3-μm InAs-GaAs quantum-dot lasers with very low continuous-wave room-temperature threshold currents HY Liu, DT Childs, TJ Badcock, KM Groom, IR Sellers, M Hopkinson, ... IEEE photonics technology letters 17 (6), 1139-1141, 2005 | 161 | 2005 |
| Photoluminescence, photoluminescence excitation, and resonant Raman spectroscopy of disordered and ordered Ga0.52In0.48P MC DeLong, DJ Mowbray, RA Hogg, MS Skolnick, M Hopkinson, ... Journal of applied physics 73 (10), 5163-5172, 1993 | 117 | 1993 |
| Self-assembled quantum-dot superluminescent light-emitting diodes ZY Zhang, RA Hogg, XQ Lv, ZG Wang Advances in Optics and Photonics 2 (2), 201-228, 2010 | 114 | 2010 |
| p-doped 1.3 μm InAs∕ GaAs quantum-dot laser with a low threshold current density and high differential efficiency HY Liu, SL Liew, T Badcock, DJ Mowbray, MS Skolnick, SK Ray, TL Choi, ... Applied Physics Letters 89 (7), 2006 | 109 | 2006 |
| Broad-band superluminescent light emitting diodes incorporating quantum dots in compositionally modulated quantum wells SK Ray, KM Groom, MD Beattie, HY Liu, M Hopkinson, RA Hogg Integrated Optoelectronic Devices 2006, 612907-612907-6, 2006 | 106 | 2006 |
| 1.55 µm InAs/GaAs quantum dots and high repetition rate quantum dot SESAM mode-locked laser ZY Zhang, AEH Oehler, B Resan, S Kurmulis, KJ Zhou, Q Wang, ... Scientific reports 2, 477, 2012 | 96 | 2012 |
| Tailoring of internal fields in InGaAs/GaAs multiwell structures grown on (111) B GaAs AS Pabla, JL Sanchez‐Rojas, J Woodhead, R Grey, JPR David, GJ Rees, ... Applied Physics Letters 63 (6), 752-754, 1993 | 86 | 1993 |
| Systematic study of the effects of modulation p-doping on 1.3-μm quantum-dot lasers RR Alexander, DTD Childs, H Agarwal, KM Groom, HY Liu, M Hopkinson, ... IEEE Journal of Quantum Electronics 43 (12), 1129-1139, 2007 | 80 | 2007 |
| Near-infrared and mid-infrared semiconductor broadband light emitters CC Hou, HM Chen, JC Zhang, N Zhuo, YQ Huang, RA Hogg, DTD Childs, ... Light: Science & Applications 7 (3), 17170-17170, 2018 | 71 | 2018 |
| Band gap of ‘‘completely disordered’’ Ga0.52In0.48P MC DeLong, DJ Mowbray, RA Hogg, MS Skolnick, JE Williams, K Meehan, ... Applied physics letters 66 (23), 3185-3187, 1995 | 68 | 1995 |
| Piezoelectric-field effects on transition energies, oscillator strengths, and level widths in (111) B-grown (In, Ga) As/GaAs multiple quantum wells RA Hogg, TA Fisher, ARK Willcox, DM Whittaker, MS Skolnick, ... Physical Review B 48 (11), 8491, 1993 | 66 | 1993 |
| Single photon detection with a quantum dot transistor AJ Shields, MP O'Sullivan, I Farrer, DA Ritchie, ML Leadbeater, NK Patel, ... Japanese Journal of Applied Physics 40 (3S), 2058, 2001 | 61 | 2001 |
| Sensitivity advantage of QCL tunable-laser mid-infrared spectroscopy over FTIR spectroscopy DTD Childs, RA Hogg, DG Revin, IU Rehman, JW Cockburn, SJ Matcher Applied Spectroscopy Reviews 50 (10), 822-839, 2015 | 59 | 2015 |
| Rapid radiative decay of charged excitons D Sanvitto, RA Hogg, AJ Shields, DM Whittaker, MY Simmons, DA Ritchie, ... Physical Review B 62 (20), R13294, 2000 | 56 | 2000 |
| Quantum dot superluminescent diodes for optical coherence tomography: device engineering PDL Greenwood, DTD Childs, K Kennedy, KM Groom, M Hugues, ... IEEE Journal of Selected Topics in Quantum Electronics 16 (4), 1015-1022, 2010 | 53 | 2010 |
| Direct modulation of excited state quantum dot lasers BJ Stevens, DTD Childs, H Shahid, RA Hogg Applied Physics Letters 95 (6), 2009 | 53 | 2009 |
Kristian GroomSenior Lecturer, The University of Sheffield確認したメール アドレス: sheffield.ac.uk
