| Resistance switching and formation of a conductive bridge in metal/binary oxide/metal structure for memory devices K Fujiwara, T Nemoto, MJ Rozenberg, Y Nakamura, H Takagi Japanese Journal of Applied Physics 47 (8R), 6266, 2008 | 197 | 2008 |
| 5d iridium oxide as a material for spin-current detection K Fujiwara, Y Fukuma, J Matsuno, H Idzuchi, Y Niimi, YC Otani, H Takagi Nature communications 4 (1), 2893, 2013 | 151 | 2013 |
| Accumulation and depletion layer thicknesses in organic field effect transistors M Kiguchi, M Nakayama, K Fujiwara, K Ueno, T Shimada, K Saiki Japanese Journal of Applied Physics 42 (12A), L1408, 2003 | 132 | 2003 |
| Highly conductive PdCoO2 ultrathin films for transparent electrodes T Harada, K Fujiwara, A Tsukazaki APL Materials 6 (4), 2018 | 63 | 2018 |
| Ferromagnetic Co3Sn2S2 thin films fabricated by co-sputtering K Fujiwara, J Ikeda, J Shiogai, T Seki, K Takanashi, A Tsukazaki Japanese Journal of Applied Physics 58 (5), 050912, 2019 | 42 | 2019 |
| Critical thickness for the emergence of Weyl features in Co3Sn2S2 thin films J Ikeda, K Fujiwara, J Shiogai, T Seki, K Nomura, K Takanashi, ... Communications Materials 2 (1), 18, 2021 | 38 | 2021 |
| Enhanced electron mobility at the two-dimensional metallic surface of BaSnO3 electric-double-layer transistor at low temperatures K Fujiwara, K Nishihara, J Shiogai, A Tsukazaki Applied Physics Letters 110 (20), 2017 | 37 | 2017 |
| First-principles investigation of magnetic and transport properties in hole-doped shandite compounds Y Yanagi, J Ikeda, K Fujiwara, K Nomura, A Tsukazaki, MT Suzuki Physical Review B 103 (20), 205112, 2021 | 29 | 2021 |
| Anomalous Hall effect at the spontaneously electron-doped polar surface of ultrathin films T Harada, K Sugawara, K Fujiwara, M Kitamura, S Ito, T Nojima, K Horiba, ... Physical Review Research 2 (1), 013282, 2020 | 29 | 2020 |
| Thin-film stabilization of LiNbO3-type ZnSnO3 and MgSnO3 by molecular-beam epitaxy K Fujiwara, H Minato, J Shiogai, A Kumamoto, N Shibata, A Tsukazaki APL Materials 7 (2), 2019 | 27 | 2019 |
| Tuning metal-insulator transition by one dimensional alignment of giant electronic domains in artificially size-controlled epitaxial VO2 wires H Takami, K Kawatani, H Ueda, K Fujiwara, T Kanki, H Tanaka Applied Physics Letters 101 (26), 2012 | 27 | 2012 |
| Spatial redistribution of oxygen ions in oxide resistance switching device after forming process T Yajima, K Fujiwara, A Nakao, T Kobayashi, T Tanaka, K Sunouchi, ... Japanese journal of applied physics 49 (6R), 060215, 2010 | 26 | 2010 |
| High field-effect mobility at the (Sr, Ba) SnO3/BaSnO3 interface K Fujiwara, K Nishihara, J Shiogai, A Tsukazaki AIP Advances 6 (8), 2016 | 24 | 2016 |
| Formation of distorted rutile-type NbO2, MoO2, and WO2 films by reactive sputtering K Fujiwara, A Tsukazaki Journal of Applied Physics 125 (8), 2019 | 22 | 2019 |
| Fermi-level tuning of the Dirac surface state in (Bi1− xSbx) 2Se3 thin films Y Satake, J Shiogai, D Takane, K Yamada, K Fujiwara, S Souma, T Sato, ... Journal of Physics: Condensed Matter 30 (8), 085501, 2018 | 22 | 2018 |
| Identification of giant mott phase transition of single electric nanodomain in manganite nanowall wire AN Hattori, Y Fujiwara, K Fujiwara, TVA Nguyen, T Nakamura, M Ichimiya, ... Nano Letters 15 (7), 4322-4328, 2015 | 22 | 2015 |
| Dual field effects in electrolyte-gated spinel ferrite: electrostatic carrier doping and redox reactions T Ichimura, K Fujiwara, H Tanaka Scientific Reports 4 (1), 5818, 2014 | 21 | 2014 |
| Nanowall-Shaped MgO Substrate with Flat (100) Sidesurface: A New Route to Three-Dimensional Functional Oxide Nanostructured Electronics Y Fujiwara, AN Hattori, K Fujiwara, H Tanaka Japanese Journal of Applied Physics 52 (1R), 015001, 2012 | 19 | 2012 |
| Berry curvature contributions of kagome-lattice fragments in amorphous Fe–Sn thin films K Fujiwara, Y Kato, H Abe, S Noguchi, J Shiogai, Y Niwa, H Kumigashira, ... Nature Communications 14 (1), 3399, 2023 | 18 | 2023 |
| Enhancement of superconducting transition temperature in FeSe electric-double-layer transistor with multivalent ionic liquids T Miyakawa, J Shiogai, S Shimizu, M Matsumoto, Y Ito, T Harada, ... Physical Review Materials 2 (3), 031801, 2018 | 18 | 2018 |
