SUBRAMANIAN S. IYER
タイトル
引用先
引用先
Heterojunction bipolar transistors using Si-Ge alloys
SS Iyer, GL Patton, JMC Stork, BS Meyerson, DL Harame
IEEE Transactions on Electron Devices 36 (10), 2043-2064, 1989
5041989
Light emission from silicon
SS Iyer, YH Xie
Science 260 (5104), 40-46, 1993
4561993
Growth and strain compensation effects in the ternary Si1−xyGexCy alloy system
K Eberl, SS Iyer, S Zollner, JC Tsang, FK LeGoues
Applied physics letters 60 (24), 3033-3035, 1992
3581992
Silicon-germanium base heterojunction bipolar transistors by molecular beam epitaxy
GL Patton, SS Iyer, SL Delage, S Tiwari, JMC Stork
IEEE Electron Device Letters 9 (4), 165-167, 1988
3021988
Substrate for tensilely strained semiconductor
BA Ek, SS Iyer, PM Pitner, AR Powell, MJ Tejwani
US Patent 5,461,243, 1995
2831995
New approach to the growth of low dislocation relaxed SiGe material
AR Powell, SS Iyer, FK LeGoues
Applied physics letters 64 (14), 1856-1858, 1994
2511994
Electrically programmable fuse (eFUSE) using electromigration in silicides
C Kothandaraman, SK Iyer, SS Iyer
IEEE Electron Device Letters 23 (9), 523-525, 2002
2402002
Production of substrate for tensilely strained semiconductor
BA Ek, SS Iyer, PM Pitner, AR Powell, MJ Tejwani
US Patent 5,759,898, 1998
2041998
Surface-stress-induced order in SiGe alloy films
FK LeGoues, VP Kesan, SS Iyer, J Tersoff, R Tromp
Physical review letters 64 (17), 2038, 1990
1751990
Synthesis of Si1−yCy alloys by molecular beam epitaxy
SS Iyer, K Eberl, MS Goorsky, FK LeGoues, JC Tsang, F Cardone
Applied physics letters 60 (3), 356-358, 1992
1701992
Sharp profiles with high and low doping levels in silicon grown by molecular beam epitaxy
SS Iyer, RA Metzger, FG Allen
Journal of Applied Physics 52 (9), 5608-5613, 1981
1641981
Method of making 3D integrated circuits
MG Farooq, SS Iyer, SJ Koester, H Zhu
US Patent 8,158,515, 2012
1602012
Growth temperature dependence of interfacial abruptness in Si/Ge heteroepitaxy studied by Raman spectroscopy and medium energy ion scattering
SS Iyer, JC Tsang, MW Copel, PR Pukite, RM Tromp
Applied physics letters 54 (3), 219-221, 1989
1601989
Non-halogenated solvents for environmentally friendly processing of high-performance bulk-heterojunction polymer solar cells
CC Chueh, K Yao, HL Yip, CY Chang, YX Xu, KS Chen, CZ Li, P Liu, ...
Energy & Environmental Science 6 (11), 3241-3248, 2013
1562013
Electrically programmable fuse (efuse): From memory redundancy to autonomic chips
N Robson, J Safran, C Kothandaraman, A Cestero, X Chen, ...
2007 IEEE Custom Integrated Circuits Conference, 799-804, 2007
1562007
Single-etch stop process for the manufacture of silicon-on-insulator wafers
SS Iyer, E Baran, ML Mastroianni, RA Craven
US Patent 5,937,312, 1999
1561999
The kinetics of fast steps on crystal surfaces and its application to the molecular beam epitaxy of silicon
R Ghez, SS Iyer
IBM journal of research and development 32 (6), 804-818, 1988
1451988
High temperature process limitation on TiSi2
CY Ting, FM d'Heurle, SS Iyer, PM Fryer
Journal of the Electrochemical Society 133 (12), 2621, 1986
1301986
High performance 0.25 mu m p-MOSFETs with silicon-germanium channels for 300 K and 77 K operation
VP Kesan, S Subbana, PJ Restle, MJ Tejwani, JM Aitken, SS Iyer, JA Ott
International Electron Devices Meeting 1991 [Technical Digest], 25-28, 1991
1261991
Low defect Si: C layer with retrograde carbon profile
Y Liu, SS Iyer, J Li
US Patent 7,696,000, 2010
1252010
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