フォロー
Dr. Stefan Mueller
Dr. Stefan Mueller
CTO at Ferroelectric Memory Company (FMC)
確認したメール アドレス: ferroelectric-memory.com - ホームページ
タイトル
引用先
引用先
Ferroelectricity in Simple Binary ZrO2 and HfO2
J Muller, TS Boscke, U Schroder, S Mueller, D Brauhaus, U Bottger, ...
Nano letters 12 (8), 4318-4323, 2012
15372012
Incipient Ferroelectricity in Al‐Doped HfO2 Thin Films
S Mueller, J Mueller, A Singh, S Riedel, J Sundqvist, U Schroeder, ...
Advanced Functional Materials 22 (11), 2412-2417, 2012
7712012
Ferroelectric hafnium oxide based materials and devices: Assessment of current status and future prospects
J Müller, P Polakowski, S Mueller, T Mikolajick
ECS Journal of Solid State Science and Technology 4 (5), N30, 2015
4802015
A FeFET based super-low-power ultra-fast embedded NVM technology for 22nm FDSOI and beyond
S Dünkel, M Trentzsch, R Richter, P Moll, C Fuchs, O Gehring, M Majer, ...
2017 IEEE International Electron Devices Meeting (IEDM), 19.7. 1-19.7. 4, 2017
4572017
A 28nm HKMG super low power embedded NVM technology based on ferroelectric FETs
M Trentzsch, S Flachowsky, R Richter, J Paul, B Reimer, D Utess, ...
2016 IEEE International Electron Devices Meeting (IEDM), 11.5. 1-11.5. 4, 2016
3592016
Ferroelectricity in HfO2 enables nonvolatile data storage in 28 nm HKMG
J Müller, E Yurchuk, T Schlösser, J Paul, R Hoffmann, S Müller, D Martin, ...
2012 symposium on VLSI technology (VLSIT), 25-26, 2012
2952012
Switching kinetics in nanoscale hafnium oxide based ferroelectric field-effect transistors
H Mulaosmanovic, J Ocker, S Müller, U Schroeder, J Müller, ...
ACS applied materials & interfaces 9 (4), 3792-3798, 2017
2922017
Charge-Trapping Phenomena in HfO2-Based FeFET-Type Nonvolatile Memories
E Yurchuk, J Müller, S Müller, J Paul, M Pešić, R van Bentum, ...
IEEE Transactions on Electron Devices 63 (9), 3501-3507, 2016
2772016
Ferroelectricity in Gd-doped HfO2 thin films
S Mueller, C Adelmann, A Singh, S Van Elshocht, U Schroeder, ...
ECS Journal of Solid State Science and Technology 1 (6), N123, 2012
2742012
Novel ferroelectric FET based synapse for neuromorphic systems
H Mulaosmanovic, J Ocker, S Müller, M Noack, J Müller, P Polakowski, ...
2017 Symposium on VLSI Technology, T176-T177, 2017
2432017
About the deformation of ferroelectric hystereses
T Schenk, E Yurchuk, S Mueller, U Schroeder, S Starschich, U Böttger, ...
Applied physics reviews 1 (4), 2014
2072014
Reliability Characteristics of Ferroelectric Thin Films for Memory Applications
S Mueller, J Muller, U Schroeder, T Mikolajick
IEEE Transactions on Device and Materials Reliability 13 (1), 93-97, 2012
1952012
Co-sputtering yttrium into hafnium oxide thin films to produce ferroelectric properties
T Olsen, U Schröder, S Müller, A Krause, D Martin, A Singh, J Müller, ...
Applied Physics Letters 101 (8), 2012
1952012
Ferroelectricity in Si-doped HfO2 revealed: a binary lead-free ferroelectric.
D Martin, J Müller, T Schenk, TM Arruda, A Kumar, E Strelcov, E Yurchuk, ...
Advanced Materials (Deerfield Beach, Fla.) 26 (48), 8198-8202, 2014
1792014
Ten-Nanometer Ferroelectric Films for Next-Generation FRAM Capacitors
S Mueller, SR Summerfelt, J Muller, U Schroeder, T Mikolajick
IEEE Electron Device Letters 33 (9), 1300-1302, 2012
1592012
From MFM Capacitors Toward Ferroelectric Transistors: Endurance and Disturb Characteristics of -Based FeFET Devices
S Mueller, J Müller, R Hoffmann, E Yurchuk, T Schlösser, R Boschke, ...
IEEE transactions on electron devices 60 (12), 4199-4205, 2013
1492013
Hafnium oxide based CMOS compatible ferroelectric materials
U Schroeder, S Mueller, J Mueller, E Yurchuk, D Martin, C Adelmann, ...
ECS Journal of Solid State Science and Technology 2 (4), N69, 2013
1362013
Strontium doped hafnium oxide thin films: Wide process window for ferroelectric memories
T Schenk, S Mueller, U Schroeder, R Materlik, A Kersch, M Popovici, ...
2013 Proceedings of the European Solid-State Device Research Conference …, 2013
1222013
Origin of the endurance degradation in the novel HfO2-based 1T ferroelectric non-volatile memories
E Yurchuk, S Mueller, D Martin, S Slesazeck, U Schroeder, T Mikolajick, ...
2014 IEEE International Reliability Physics Symposium, 2E. 5.1-2E. 5.5, 2014
1132014
High endurance strategies for hafnium oxide based ferroelectric field effect transistor
J Muller, P Polakowski, S Muller, H Mulaosmanovic, J Ocker, T Mikolajick, ...
2016 16th non-volatile memory technology symposium (NVMTS), 1-7, 2016
932016
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