Akira Kusaba
Akira Kusaba
Verified email at gakushuin.ac.jp
TitleCited byYear
Thermodynamic analysis of (0001) and GaN metalorganic vapor phase epitaxy
A Kusaba, Y Kangawa, P Kempisty, H Valencia, K Shiraishi, Y Kumagai, ...
Japanese Journal of Applied Physics 56 (7), 070304, 2017
122017
Advances in modeling semiconductor epitaxy: Contributions of growth orientation and surface reconstruction to InN metalorganic vapor phase epitaxy
A Kusaba, Y Kangawa, P Kempisty, K Shiraishi, K Kakimoto, A Koukitu
Applied Physics Express 9 (12), 125601, 2016
112016
DFT modeling of carbon incorporation in GaN(0001) and GaN(000) metalorganic vapor phase epitaxy
P Kempisty, Y Kangawa, A Kusaba, K Shiraishi, S Krukowski, ...
Applied Physics Letters 111 (14), 141602, 2017
102017
Modeling the Non-Equilibrium Process of the Chemical Adsorption of Ammonia on GaN (0001) Reconstructed Surfaces Based on Steepest-Entropy-Ascent Quantum Thermodynamics
A Kusaba, G Li, MR von Spakovsky, Y Kangawa, K Kakimoto
Materials 10 (8), 948, 2017
102017
CH4 Adsorption Probability on GaN (0001) and (000− 1) during Metalorganic Vapor Phase Epitaxy and Its Relationship to Carbon Contamination in the Films
A Kusaba, G Li, P Kempisty, MR von Spakovsky, Y Kangawa
Materials 12 (6), 972, 2019
42019
Real-time observation system development for high-temperature liquid/solid interfaces and its application to solid-source solution growth of AlN
Y Kangawa, A Kusaba, H Sumiyoshi, H Miyake, M Boćkowski, K Kakimoto
Applied Physics Express 8 (6), 065601, 2015
42015
Theoretical approach to surface reconstruction of InN (0001) during raised-pressure metalorganic vapor-phase epitaxy
A Kusaba, Y Kangawa, Y Honda, H Amano, K Kakimoto
Japanese Journal of Applied Physics 55 (5S), 05FM01, 2016
32016
III 族窒化物半導体における表面・界面の構造および極性の理論解析
秋山亨, 中村浩次, 伊藤智徳, 草場彰, 寒川義裕
日本結晶成長学会誌 45 (1), 3-45-1-03, 2018
12018
Time Series Electricity Consumption Analysis using Non-negative Matrix Factorization
A Kusaba, T Kuboyama, T Hashimoto
2019 IEEE 10th International Conference on Awareness Science and Technology …, 2019
2019
Thermodynamic analysis of semipolar GaN and AlN under metalorganic vapor phase epitaxy growth conditions
Y Seta, AM Pradipto, T Akiyama, K Nakamura, T Ito, A Kusaba, ...
Japanese Journal of Applied Physics 58 (SC), SC1014, 2019
2019
窒化物半導体 MOVPE の熱力学解析~ 面方位依存性~
寒川義裕, 草場彰, 白石賢二, 柿本浩一, 纐纈明伯
日本結晶成長学会誌 43 (4), 233-238, 2016
2016
ナノスケールの親水部を有する撥水面での凝縮に関する研究
山田寛, 草場彰, 生田竜也, 西山貴史, 高橋厚史, 高田保之
日本機械学会論文集 81 (823), 14-00495-14-00495, 2015
2015
Wettability-driven water condensation at the micron and submicron scale
Y Yamada, A Kusaba, T Ikuta, T Nishiyama, K Takahashi, Y Takata
International Heat Transfer Conference Digital Library, 2014
2014
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