Akira Kusaba
Akira Kusaba
確認したメール アドレス: gakushuin.ac.jp
タイトル引用先
Thermodynamic analysis of (0001) and GaN metalorganic vapor phase epitaxy
A Kusaba, Y Kangawa, P Kempisty, H Valencia, K Shiraishi, Y Kumagai, ...
Japanese Journal of Applied Physics 56 (7), 070304, 2017
102017
Advances in modeling semiconductor epitaxy: Contributions of growth orientation and surface reconstruction to InN metalorganic vapor phase epitaxy
A Kusaba, Y Kangawa, P Kempisty, K Shiraishi, K Kakimoto, A Koukitu
Applied Physics Express 9 (12), 125601, 2016
92016
DFT modeling of carbon incorporation in GaN(0001) and GaN(000) metalorganic vapor phase epitaxy
P Kempisty, Y Kangawa, A Kusaba, K Shiraishi, S Krukowski, ...
Applied Physics Letters 111 (14), 141602, 2017
82017
Modeling the Non-Equilibrium Process of the Chemical Adsorption of Ammonia on GaN (0001) Reconstructed Surfaces Based on Steepest-Entropy-Ascent Quantum Thermodynamics
A Kusaba, G Li, MR von Spakovsky, Y Kangawa, K Kakimoto
Materials 10 (8), 948, 2017
72017
Real-time observation system development for high-temperature liquid/solid interfaces and its application to solid-source solution growth of AlN
Y Kangawa, A Kusaba, H Sumiyoshi, H Miyake, M Boćkowski, K Kakimoto
Applied Physics Express 8 (6), 065601, 2015
42015
Theoretical approach to surface reconstruction of InN (0001) during raised-pressure metalorganic vapor-phase epitaxy
A Kusaba, Y Kangawa, Y Honda, H Amano, K Kakimoto
Japanese Journal of Applied Physics 55 (5S), 05FM01, 2016
32016
CH4 Adsorption Probability on GaN (0001) and (000− 1) during Metalorganic Vapor Phase Epitaxy and Its Relationship to Carbon Contamination in the Films
A Kusaba, G Li, P Kempisty, MR von Spakovsky, Y Kangawa
Materials 12 (6), 972, 2019
12019
Thermodynamic analysis of semipolar GaN and AlN under metalorganic vapor phase epitaxy growth conditions
Y Seta, AM Pradipto, T Akiyama, K Nakamura, T Ito, A Kusaba, ...
Japanese Journal of Applied Physics 58 (SC), SC1014, 2019
2019
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