Jens Falta
Jens Falta
確認したメール アドレス: ifp.uni-bremen.de - ホームページ
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引用先
Electron diffraction at stepped homogeneous and inhomogeneous surfaces
J Wollschläger, J Falta, M Henzler
Applied Physics A 50 (1), 57-68, 1990
1181990
Structure and composition of GaAs (001) surfaces
J Falta, RM Tromp, M Copel, GD Pettit, PD Kirchner
Physical review letters 69 (21), 3068, 1992
1081992
Spatial pattern formation in a catalytic surface reaction: The facetting of Pt(110) in CO+
J Falta, R Imbihl, M Henzler
Physical review letters 64 (12), 1409, 1990
941990
Ring clusters in transition-metal–silicon surface structures
PA Bennett, M Copel, D Cahill, J Falta, RM Tromp
Physical review letters 69 (8), 1224, 1992
841992
Surfactant coverage and epitaxy of Ge on Ga‐terminated Si (111)
J Falta, M Copel, FK LeGoues, RM Tromp
Applied physics letters 62 (23), 2962-2964, 1993
741993
Structural and Chemical Effects of Plasma Treatment on Close‐Packed Colloidal Nanoparticle Layers
B Gehl, A Frömsdorf, V Aleksandrovic, T Schmidt, A Pretorius, JI Flege, ...
Advanced Functional Materials 18 (16), 2398-2410, 2008
582008
Growth and morphology of ceria on ruthenium (0001)
B Kaemena, SD Senanayake, A Meyer, JT Sadowski, J Falta, JI Flege
The Journal of Physical Chemistry C 117 (1), 221-232, 2013
512013
Ordering and shape of self-assembled InAs quantum dots on GaAs (001)
K Zhang, C Heyn, W Hansen, T Schmidt, J Falta
Applied Physics Letters 76 (16), 2229-2231, 2000
492000
Segregation-enhanced etching of Cd during Zn deposition on CdSe quantum dots
T Passow, H Heinke, T Schmidt, J Falta, A Stockmann, H Selke, PL Ryder, ...
Physical Review B 64 (19), 193311, 2001
482001
Bi: Perfect surfactant for Ge growth on Si (111)?
T Schmidt, J Falta, G Materlik, J Zeysing, G Falkenberg, RL Johnson
Applied physics letters 74 (10), 1391-1393, 1999
481999
Self-limited oxide formation in Ni (111) oxidation
JI Flege, A Meyer, J Falta, EE Krasovskii
Physical Review B 84 (11), 115441, 2011
432011
Surfactants in Si (111) homoepitaxy
M Horn‐von Hoegen, J Falta, M Copel, RM Tromp
Applied physics letters 66 (4), 487-489, 1995
391995
The initial stages of growth of silicon on Si (111) by slow positron annihilation low-energy electron diffraction
MH Von Hoegen, J Falta, M Henzler
Thin Solid Films 183 (1-2), 213-220, 1989
391989
Domain wall structure of Si (111)(√ 3×√ 3) R30°-Au
J Falta, A Hille, D Novikov, G Materlik, L Seehofer, G Falkenberg, ...
Surface science 330 (2), L673-L677, 1995
381995
Role of Palladium in Iron Based Fischer− Tropsch Catalysts Prepared by Flame Spray Pyrolysis
M Minnermann, S Pokhrel, K Thiel, R Henkel, J Birkenstock, T Laurus, ...
The Journal of Physical Chemistry C 115 (4), 1302-1310, 2011
362011
Surfactant-mediated epitaxy of Ge on Si (111): Beyond the surface
T Schmidt, R Kröger, T Clausen, J Falta, A Janzen, M Kammler, P Kury, ...
Applied Physics Letters 86 (11), 111910, 2005
352005
The initial stages of epitaxial growth of silicon on Si (100)− 2× 1
S Heun, J Falta, M Henzler
Surface science 243 (1-3), 132-140, 1991
351991
The lattice position of Fe in Fe-doped LiNbO3
T Gog, P Schotters, J Falta, G Materlik, M Grodzicki
Journal of Physics: Condensed Matter 7 (35), 6971, 1995
341995
Silicate-free growth of high-quality ultrathin cerium oxide films on Si (111)
JI Flege, B Kaemena, S Gevers, F Bertram, T Wilkens, D Bruns, J Bätjer, ...
Physical Review B 84 (23), 235418, 2011
332011
Towards perfect Ge δ layers on Si (001)
J Falta, D Bahr, G Materlik, BH Müller, M Horn‐von Hoegen
Applied physics letters 68 (10), 1394-1396, 1996
331996
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