|A review on the physical mechanisms that limit the reliability of GaN-based LEDs|
M Meneghini, A Tazzoli, G Mura, G Meneghesso, E Zanoni
IEEE Transactions on Electron Devices 57 (1), 108-118, 2009
|Accelerated life test of high brightness light emitting diodes|
L Trevisanello, M Meneghini, G Mura, M Vanzi, M Pavesi, G Meneghesso, ...
IEEE Transactions on Device and Materials Reliability 8 (2), 304-311, 2008
|Failure analysis-assisted FMEA|
G Cassanelli, G Mura, F Fantini, M Vanzi, B Plano
Microelectronics Reliability 46 (9-11), 1795-1799, 2006
|High temperature electro-optical degradation of InGaN/GaN HBLEDs|
M Meneghini, L Trevisanello, C Sanna, G Mura, M Vanzi, G Meneghesso, ...
Microelectronics Reliability 47 (9-11), 1625-1629, 2007
|Are soft breakdown and hard breakdown of ultrathin gate oxides actually different failure mechanisms?|
J Suñé, G Mura, E Miranda
IEEE Electron Device Letters 21 (4), 167-169, 2000
|Reliability of visible GaN LEDs in plastic package|
G Meneghesso, S Levada, E Zanoni, G Scamarcio, G Mura, S Podda, ...
Microelectronics Reliability 43 (9-11), 1737-1742, 2003
|Failure Modes and Mechanisms of DC‐Aged GaN LEDs|
G Meneghesso, S Levada, E Zanoni, S Podda, G Mura, M Vanzi, ...
physica status solidi (a) 194 (2), 389-392, 2002
|Thermal stability analysis of high brightness LED during high temperature and electrical aging|
LR Trevisanello, M Meneghini, G Mura, C Sanna, S Buso, G Spiazzi, ...
Seventh International Conference on Solid State Lighting 6669, 666913, 2007
|Phosphors for LED-based light sources: Thermal properties and reliability issues|
M Dal Lago, M Meneghini, N Trivellin, G Mura, M Vanzi, G Meneghesso, ...
Microelectronics Reliability 52 (9-10), 2164-2167, 2012
|Chip and package-related degradation of high power white LEDs|
M Meneghini, M Dal Lago, N Trivellin, G Mura, M Vanzi, G Meneghesso, ...
Microelectronics Reliability 52 (5), 804-812, 2012
|Reliability predictions in electronic industrial applications|
G Cassanelli, G Mura, F Cesaretti, M Vanzi, F Fantini
Microelectronics Reliability 45 (9-11), 1321-1326, 2005
|Sulfur-contamination of high power white LED|
G Mura, G Cassanelli, F Fantini, M Vanzi
Microelectronics Reliability 48 (8-9), 1208-1211, 2008
|Influence of shunt resistance on the performance of an illuminated string of solar cells: theory, simulation, and experimental analysis|
M Barbato, M Meneghini, A Cester, G Mura, E Zanoni, G Meneghesso
IEEE Transactions on Device and Materials Reliability 14 (4), 942-950, 2014
|Degradation of InGaN/GaN laser diodes investigated by micro-cathodoluminescence and micro-photoluminescence|
M Meneghini, S Carraro, G Meneghesso, N Trivellin, G Mura, F Rossi, ...
Applied Physics Letters 103 (23), 233506, 2013
|The interpretation of the DC characteristics of LED and laser diodes to address their failure analysis|
G Mura, M Vanzi
Microelectronics Reliability 50 (4), 471-478, 2010
|Formation of metastable solid solutions by mechanical alloying of immiscible Ag and Bi|
E Musu, G Mura, G Ligios, F Delogu
Journal of Alloys and Compounds 576, 80-85, 2013
|ESD protection structures for 20 V and 40 V power supply suitable for BCD6 smart power technology|
L Sponton, L Cerati, G Croce, G Mura, S Podda, M Vanzi, G Meneghesso
|High brightness InGaN LEDs degradation at high injection current bias|
S Levada, M Meneghini, E Zanoni, S Buso, G Spiazzi, G Meneghesso, ...
2006 IEEE International Reliability Physics Symposium Proceedings, 615-616, 2006
|Failure analysis of high power white LEDs|
G Cassanelli, G Mura, F Fantini, M Vanzi
2008 26th International Conference on Microelectronics, 255-257, 2008
|The role of the optical trans-characteristics in laser diode analysis|
G Mura, M Vanzi, G Marcello, R Cao
Microelectronics Reliability 53 (9-11), 1538-1542, 2013