フォロー
Tetsuroh Shirasawa
Tetsuroh Shirasawa
確認したメール アドレス: aist.go.jp
タイトル
引用先
引用先
Atomic and Electronic Structure of Ultrathin Bi(111) Films Grown on Substrates: Evidence for a Strain-Induced Topological Phase Transition
T Hirahara, N Fukui, T Shirasawa, M Yamada, M Aitani, H Miyazaki, ...
Physical review letters 109 (22), 227401, 2012
1422012
Large-gap magnetic topological heterostructure formed by subsurface incorporation of a ferromagnetic layer
T Hirahara, SV Eremeev, T Shirasawa, Y Okuyama, T Kubo, R Nakanishi, ...
Nano letters 17 (6), 3493-3500, 2017
1312017
Determination of atomic positions in silicene on Ag (111) by low-energy electron diffraction
K Kawahara, T Shirasawa, R Arafune, CL Lin, T Takahashi, M Kawai, ...
Surface science 623, 25-28, 2014
1082014
A weak topological insulator state in quasi-one-dimensional bismuth iodide
R Noguchi, T Takahashi, K Kuroda, M Ochi, T Shirasawa, M Sakano, ...
Nature 566 (7745), 518-522, 2019
952019
Structure determination of multilayer silicene grown on Ag (111) films by electron diffraction: Evidence for Ag segregation at the surface
T Shirai, T Shirasawa, T Hirahara, N Fukui, T Takahashi, S Hasegawa
Physical Review B 89 (24), 241403, 2014
902014
Epitaxial Silicon Oxynitride Layer on a Surface
T Shirasawa, K Hayashi, S Mizuno, S Tanaka, K Nakatsuji, F Komori, ...
Physical review letters 98 (13), 136105, 2007
672007
Surface relaxation of topological insulators: Influence on the electronic structure
N Fukui, T Hirahara, T Shirasawa, T Takahashi, K Kobayashi, ...
Physical Review B 85 (11), 115426, 2012
492012
Evidence for a higher-order topological insulator in a three-dimensional material built from van der Waals stacking of bismuth-halide chains
R Noguchi, M Kobayashi, Z Jiang, K Kuroda, T Takahashi, Z Xu, D Lee, ...
Nature Materials 20 (4), 473-479, 2021
442021
Atomically well-ordered structure at solid electrolyte and electrode interface reduces the interfacial resistance
S Shiraki, T Shirasawa, T Suzuki, H Kawasoko, R Shimizu, T Hitosugi
ACS applied materials & interfaces 10 (48), 41732-41737, 2018
402018
Re-investigation of the Bi-induced Si (111)-(3× 3) surfaces by low-energy electron diffraction
T Kuzumaki, T Shirasawa, S Mizuno, N Ueno, H Tochihara, K Sakamoto
Surface science 604 (11-12), 1044-1048, 2010
402010
Fabrication of a novel magnetic topological heterostructure and temperature evolution of its massive Dirac cone
T Hirahara, MM Otrokov, TT Sasaki, K Sumida, Y Tomohiro, S Kusaka, ...
Nature communications 11 (1), 1-8, 2020
292020
Structure and transport properties of Cu-doped films
T Shirasawa, M Sugiki, T Hirahara, M Aitani, T Shirai, S Hasegawa, ...
Physical Review B 89 (19), 195311, 2014
292014
Electron-Beam-Induced Disordering of the Surface Structure
T Shirasawa, S Mizuno, H Tochihara
Physical review letters 94 (19), 195502, 2005
292005
Structure determination of surfaces at and electron beam effect below studied by low-energy electron diffraction
S Mizuno, T Shirasawa, Y Shiraishi, H Tochihara
Physical Review B 69 (24), 241306, 2004
282004
Structural analysis of the c (4× 2) reconstruction in Si (0 0 1) and Ge (0 0 1) surfaces by low-energy electron diffraction
T Shirasawa, S Mizuno, H Tochihara
Surface science 600 (4), 815-819, 2006
272006
Quick measurement of crystal truncation rod profiles in simultaneous multi-wavelength dispersive mode
T Matsushita, T Takahashi, T Shirasawa, E Arakawa, H Toyokawa, H Tajiri
Journal of Applied Physics 110 (10), 102209, 2011
262011
Identification of the Structure Model of the Surface
T Shirasawa, W Voegeli, T Nojima, Y Iwasawa, Y Yamaguchi, ...
Physical Review Letters 113 (16), 165501, 2014
242014
The epitaxial crystalline silicon-oxynitride layer on SiC (0 0 0 1): Formation of an ideal SiC–insulator interface
H Tochihara, T Shirasawa
Progress in surface science 86 (11-12), 295-327, 2011
242011
Structure of the quasi-one-dimensional Si (553)-Au surface: Gold dimer row and silicon honeycomb chain
W Voegeli, T Takayama, T Shirasawa, M Abe, K Kubo, T Takahashi, ...
Physical Review B 82 (7), 075426, 2010
242010
Atomic-layer-resolved bandgap structure of an ultrathin oxynitride-silicon film epitaxially grown on
T Shirasawa, K Hayashi, H Yoshida, S Mizuno, S Tanaka, T Muro, ...
Physical Review B 79 (24), 241301, 2009
242009
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論文 1–20