| Scanning moiré fringe imaging for quantitative strain mapping in semiconductor devices S Kim, S Lee, Y Oshima, Y Kondo, E Okunishi, N Endo, J Jung, G Byun, ... Applied Physics Letters 102 (16), 2013 | 67 | 2013 |
| Quantitative measurement of strain field in strained-channel-transistor arrays by scanning moiré fringe imaging S Kim, Y Kondo, K Lee, G Byun, J Jung Kim, S Lee, K Lee Applied Physics Letters 103 (3), 2013 | 37 | 2013 |
| Quantitative annular dark-field STEM images of a silicon crystal using a large-angle convergent electron probe with a 300-kV cold field-emission gun S Kim, Y Oshima, H Sawada, T Kaneyama, Y Kondo, M Takeguchi, ... Journal of electron microscopy 60 (2), 109-116, 2011 | 35 | 2011 |
| Strained hetero interfaces in Si/SiGe/SiGe/SiGe multi-layers studied by scanning moiré fringe imaging S Kim, S Lee, Y Kondo, K Lee, G Byun, S Lee, K Lee Journal of Applied Physics 114 (5), 2013 | 25 | 2013 |
| Electron microscopy at a sub-50 pm resolution K Takayanagi, S Kim, S Lee, Y Oshima, T Tanaka, Y Tanishiro, H Sawada, ... Journal of electron microscopy 60 (suppl_1), S239-S244, 2011 | 24 | 2011 |
| A dopant cluster in a highly antimony doped silicon crystal S Kim, Y Oshima, H Sawada, N Hashikawa, K Asayama, T Kaneyama, ... Applied Physics Express 3 (8), 081301, 2010 | 21 | 2010 |
| Reliable strain measurement in transistor arrays by robust scanning transmission electron microscopy S Kim, JJ Kim, Y Jung, K Lee, G Byun, KH Hwang, S Lee, K Lee AIP Advances 3 (9), 092110, 2013 | 13 | 2013 |
| 3D strain measurement in electronic devices using through-focal annular dark-field imaging S Kim, Y Jung, S Lee, J Jung Kim, G Byun, S Lee, H Lee Ultramicroscopy 146, 1-5, 2014 | 12 | 2014 |
| Direct observation of nanometer-scale strain field around CoSi2/Si interface using scanning moiré fringe imaging S Kim, Y Jung, J Jung Kim, G Byun, S Lee, H Lee Applied Physics Letters 104 (16), 2014 | 12 | 2014 |
| Z-contrast dependence of quantitative scanning transmission electron microscopy image of SiGe binary crystals S Kim, Y Jung, JJ Kim, S Lee, H Lee Journal of Alloys and Compounds 618, 545, 2015 | 11 | 2015 |
| Study on probe current dependence of the intensity distribution in annular dark field images S Kim, Y Oshima, Y Tanishiro, K Takayanagi Ultramicroscopy 121, 38-41, 2012 | 10 | 2012 |
| Channel-length-dependence of strain field in transistor studied via scanning moiré fringe imaging S Kim, S Lee, Y Oshima, Y Kondo, H Lee, K Lee, G Byun, S Lee, K Lee ECS Solid State Letters 3 (1), Q1, 2013 | 7 | 2013 |
| Largely defocused probe scanning transmission electron microscopy for imaging local modulation of strain field in a hetero interface S Kim, Y Oshima, Y Jung, JJ Kim, S Lee, H Lee Applied Physics Letters 105 (15), 151604, 2014 | 4 | 2014 |
| Stress Analysis in a SiGe-Channel-Transistor by Scanning Moiré Fringe Imaging S Kim, Y Jung, JJ Kim, S Lee, H Lee IEEE Electron Device Letters 35 (10), 983, 2014 | 4 | 2014 |
| Reproducible strain measurement in electronic devices by applying integer multiple to scanning grating in scanning moiré fringe imaging S Kim, Y Jung, JJ Kim, S Lee, H Lee, Y Kondo AIP Advances 4, 107107, 2014 | 1 | 2014 |
| Direct observation of crystallization of HfO2 promoted on silicon surfaces in gate dielectric stacks S Kim, Y Oshima, N Nakajima, N Hashikawa, K Asayama, K Takayanagi Thin solid films 520 (7), 2562-2565, 2012 | 1 | 2012 |
| An effect of probe current on ADF image intensity of Si crystal S Kim, Y Oshima, Y Tanishiro, K Takayanagi APS March Meeting Abstracts 2011, W21. 005, 2011 | | 2011 |
| In-situ TEM observation on STM tunneling gap S Kim, Y Tanishiro, K Takayanagi APS March Meeting Abstracts, K1. 118, 2009 | | 2009 |
Yukihito KondoResearcher in JEOL Ltd.確認したメール アドレス: jeol.co.jp
Yukihito KondoResearcher in JEOL Ltd.確認したメール アドレス: jeol.co.jp