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Nanoholes fabricated by self-assembled gallium nanodrill on GaAs (100)
ZM Wang, BL Liang, KA Sablon, GJ Salamo
Applied physics letters 90 (11), 113120, 2007
Bottom-up photonic crystal lasers
AC Scofield, SH Kim, JN Shapiro, A Lin, B Liang, A Scherer, DL Huffaker
Nano letters 11 (12), 5387-5390, 2011
Surface plasmon-enhanced nanopillar photodetectors
P Senanayake, CH Hung, J Shapiro, A Lin, B Liang, BS Williams, ...
Nano letters 11 (12), 5279-5283, 2011
A vertically layered MoS 2/Si heterojunction for an ultrahigh and ultrafast photoresponse photodetector
S Qiao, R Cong, J Liu, B Liang, G Fu, W Yu, K Ren, S Wang, C Pan
Journal of Materials Chemistry C 6 (13), 3233-3239, 2018
Self-catalyzed epitaxial growth of vertical indium phosphide nanowires on silicon
L Gao, RL Woo, B Liang, M Pozuelo, S Prikhodko, M Jackson, N Goel, ...
Nano letters 9 (6), 2223-2228, 2009
Low density InAs quantum dots grown on GaAs nanoholes
BL Liang, ZM Wang, JH Lee, K Sablon, YI Mazur, GJ Salamo
Applied physics letters 89 (4), 043113, 2006
InGaAs heterostructure formation in catalyst-free GaAs nanopillars by selective-area metal-organic vapor phase epitaxy
JN Shapiro, A Lin, PS Wong, AC Scofield, C Tu, PN Senanayake, ...
Applied Physics Letters 97 (24), 243102, 2010
Structural analysis of highly relaxed GaSb grown on GaAs substrates with periodic interfacial array of 90 misfit dislocations
A Jallipalli, G Balakrishnan, SH Huang, TJ Rotter, K Nunna, BL Liang, ...
Nanoscale research letters 4 (12), 1458-1462, 2009
Ultrahigh, ultrafast, and self‐powered visible‐near‐infrared optical position‐sensitive detector based on a CVD‐prepared vertically standing few‐layer MoS2/Si heterojunction
R Cong, S Qiao, J Liu, J Mi, W Yu, B Liang, G Fu, C Pan, S Wang
Advanced Science 5 (2), 1700502, 2018
Self‐Organization of InAs Quantum‐Dot Clusters Directed by Droplet Homoepitaxy
ZM Wang, B Liang, KA Sablon, J Lee, YI Mazur, NW Strom, GJ Salamo
Small 3 (2), 235-238, 2007
CdS/Sb 2 S 3 heterojunction thin film solar cells with a thermally evaporated absorber
X Chen, Z Li, H Zhu, Y Wang, B Liang, J Chen, Y Xu, Y Mai
Journal of Materials Chemistry C 5 (36), 9421-9428, 2017
Energy transfer within ultralow density twin InAs quantum dots grown by droplet epitaxy
BL Liang, ZM Wang, XY Wang, JH Lee, YI Mazur, CK Shih, GJ Salamo
ACS nano 2 (11), 2219-2224, 2008
Extremely low excess noise and high sensitivity AlAs0. 56Sb0. 44 avalanche photodiodes
X Yi, S Xie, B Liang, LW Lim, JS Cheong, MC Debnath, DL Huffaker, ...
Nature Photonics 13 (10), 683-686, 2019
Piezophototronic Effect Enhanced Photoresponse of the Flexible Cu(In,Ga)Se2 (CIGS) Heterojunction Photodetectors
S Qiao, J Liu, X Niu, B Liang, G Fu, Z Li, S Wang, K Ren, C Pan
Advanced Functional Materials 28 (19), 1707311, 2018
Strong interband transitions in InAs quantum dots solar cell
J Wu, YFM Makableh, R Vasan, MO Manasreh, B Liang, CJ Reyner, ...
Applied Physics Letters 100 (5), 051907, 2012
GaSb/GaAs type-II quantum dots grown by droplet epitaxy
B Liang, A Lin, N Pavarelli, C Reyner, J Tatebayashi, K Nunna, J He, ...
Nanotechnology 20 (45), 455604, 2009
GaSb thermophotovoltaic cells grown on GaAs by molecular beam epitaxy using interfacial misfit arrays
BC Juang, RB Laghumavarapu, BJ Foggo, PJ Simmonds, A Lin, B Liang, ...
Applied Physics Letters 106 (11), 111101, 2015
Molecular beam epitaxy of lattice-matched InAlAs and InGaAs layers on InP (111) A,(111) B, and (110)
CD Yerino, B Liang, DL Huffaker, PJ Simmonds, ML Lee
Journal of Vacuum Science & Technology B, Nanotechnology and …, 2017
800 meV localization energy in GaSb/GaAs/Al0.3Ga0.7As quantum dots
T Nowozin, L Bonato, A Högner, A Wiengarten, D Bimberg, WH Lin, ...
Applied Physics Letters 102 (5), 052115, 2013
Bottom-up photonic crystal cavities formed by patterned III–V nanopillars
AC Scofield, JN Shapiro, A Lin, AD Williams, PS Wong, BL Liang, ...
Nano letters 11 (6), 2242-2246, 2011
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