Reversible hysteresis inversion in MoS2 field effect transistors N Kaushik, DMA Mackenzie, K Thakar, N Goyal, B Mukherjee, P Boggild, ... npj 2D Materials and Applications 1 (1), 34, 2017 | 97 | 2017 |
Phase engineering of seamless heterophase homojunctions with co-existing 3R and 2H phases in WS 2 monolayers P Kumar, NC Verma, N Goyal, J Biswas, S Lodha, CK Nandi, ... Nanoscale 10 (7), 3320-3330, 2018 | 29 | 2018 |
Enhanced stability and performance of few-layer black phosphorus transistors by electron beam irradiation N Goyal, N Kaushik, H Jawa, S Lodha Nanoscale 10 (24), 11616-11623, 2018 | 28 | 2018 |
Accurate Threshold Voltage Reliability Evaluation of Thin Al2O3 Top-Gated Dielectric Black Phosphorous FETs Using Ultrafast Measurement Pulses N Goyal, N Parihar, H Jawa, S Mahapatra, S Lodha ACS applied materials & interfaces 11 (26), 23673-23680, 2019 | 14 | 2019 |
Enhanced thermally aided memory performance using few-layer ReS2 transistors N Goyal, D Mackenzie, V Panchal, H Jawa, O Kazakova, DH Petersen, ... Applied Physics Letters 116 (5), 2020 | 11 | 2020 |
Ultrafast Characterization of Hole Trapping Near Black Phosphorus–SiO2 Interface During NBTI Stress in 2-D BP p-FETs N Goyal, S Mahapatra, S Lodha IEEE Transactions on Electron Devices 66 (11), 4572-4577, 2019 | 4 | 2019 |
Thermally Aided Nonvolatile Memory Using $\pmb {\mathrm {ReS} _ {2}} $ Transistors N Goyal, DMA Mackenzie, H Jawa, DH Petersen, S Lodha 2018 76th Device Research Conference (DRC), 1-2, 2018 | 2 | 2018 |
Enhanced thermally aided memory performance using few-layer transistors N Goyal, DMA Mackenzie, V Panchal, H Jawa, O Kazakova, D Hjorth | | 2020 |
Effect of electron beam irradiation on black phosphorus field effect transistor performance N Goyal, N Kaushik, H Jawa, S Lodha 2017 75th Annual Device Research Conference (DRC), 1-3, 2017 | | 2017 |
Supporting Information Enhanced Stability and Performance of Few-Layer Black Phosphorus Transistors by Electron Beam Irradiation N Goyal, N Kaushik, H Jawa, S Lodha | | |