The effect of stress on the dielectric properties of barium strontium titanate thin films TM Shaw, Z Suo, M Huang, E Liniger, RB Laibowitz, JD Baniecki Applied physics letters 75 (14), 2129-2131, 1999 | 414 | 1999 |
(Ba, Sr) TiO 3 dielectrics for future stacked-capacitor DRAM DE Kotecki, JD Baniecki, H Shen, RB Laibowitz, KL Saenger, JJ Lian, ... IBM Journal of Research and Development 43 (3), 367-382, 1999 | 263 | 1999 |
Dielectric relaxation of thin films from 1 mHz to 20 GHz JD Baniecki, RB Laibowitz, TM Shaw, PR Duncombe, DA Neumayer, ... Applied physics letters 72 (4), 498-500, 1998 | 191 | 1998 |
Tuneable ferroelectric decoupling capacitor TM Shaw, WD Pricer, DA Neumayer, JD Baniecki, RB Laibowitz US Patent 6,888,714, 2005 | 98 | 2005 |
Hydrogen induced tunnel emission in thin film capacitors JD Baniecki, RB Laibowitz, TM Shaw, C Parks, J Lian, H Xu, QY Ma Journal of Applied Physics 89 (5), 2873-2885, 2001 | 91 | 2001 |
Chemisorption of water and carbon dioxide on nanostructured BaTiO3–SrTiO3 (001) surfaces JD Baniecki, M Ishii, K Kurihara, K Yamanaka, T Yano, K Shinozaki, ... Journal of Applied Physics 106 (5), 2009 | 83 | 2009 |
Surface core-level shifts of strontium observed in photoemission of barium strontium titanate thin films JD Baniecki, M Ishii, T Shioga, K Kurihara, S Miyahara Applied physics letters 89 (16), 2006 | 81 | 2006 |
Investigation of the importance of interface and bulk limited transport mechanisms on the leakage current of high dielectric constant thin film capacitors JD Baniecki, T Shioga, K Kurihara, N Kamehara Journal of applied physics 94 (10), 6741-6748, 2003 | 72 | 2003 |
Layer capacitor element and production process as well as electronic device K Kurihara, T Shioga, JD Baniecki, M Kurashina US Patent 7,161,793, 2007 | 69 | 2007 |
Hall effect measurements on epitaxial SmNiO 3 thin films and implications for antiferromagnetism SD Ha, R Jaramillo, DM Silevitch, F Schoofs, K Kerman, JD Baniecki, ... Physical Review B 87 (12), 125150, 2013 | 63 | 2013 |
Photoemission and quantum chemical study of SrTiO 3 (001) surfaces and their interaction with CO 2 JD Baniecki, M Ishii, K Kurihara, K Yamanaka, T Yano, K Shinozaki, ... Physical Review B 78 (19), 195415, 2008 | 63 | 2008 |
Compensation doping of thin films M Copel, JD Baniecki, PR Duncombe, D Kotecki, R Laibowitz, ... Applied physics letters 73 (13), 1832-1834, 1998 | 60 | 1998 |
Effects of annealing conditions on charge loss mechanisms in MOCVD Ba0· 7Sr0· 3TiO3 thin film capacitors JD Baniecki, RB Laibowitz, TM Shaw, KL Saenger, PR Duncombe, ... Journal of the European Ceramic Society 19 (6-7), 1457-1461, 1999 | 59 | 1999 |
Probe card and testing method of semiconductor chip, capacitor and manufacturing method thereof Y Yamagishi, T Shioga, JD Baniecki, K Kurihara US Patent 7,102,367, 2006 | 58 | 2006 |
vapor-induced leakage degradation of thin-film capacitors with Pt and electrodes JD Baniecki, JS Cross, M Tsukada, J Watanabe Applied physics letters 81 (20), 3837-3839, 2002 | 51 | 2002 |
Decoupling capacitor with low inductance for high-frequency digital applications Y Imanaka Fujitsu Sci. Tech. J. 38 (1), 22-30, 2002 | 51 | 2002 |
Plating method, semiconductor device fabrication method and circuit board fabrication method M Mizukoshi, K Nakagawa, T Shioga, K Kurihara, JD Baniecki US Patent 7,670,940, 2010 | 49 | 2010 |
Density functional theory and experimental study of the electronic structure and transport properties of La, V, Nb, and Ta doped SrTiO3 JD Baniecki, M Ishii, H Aso, K Kurihara, D Ricinschi Journal of Applied Physics 113 (1), 2013 | 48 | 2013 |
Thin film capacitor and method of manufacturing the same T Shioga, JD Baniecki, K Kurihara US Patent 6,853,051, 2005 | 48 | 2005 |
Semiconductor device, method of manufacturing the same, capacitor structure, and method of manufacturing the same K Kurihara, T Shioga, JD Baniecki US Patent 7,298,050, 2007 | 45 | 2007 |