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John David Baniecki
John David Baniecki
SLAC National Accelerator Laboratory
Verified email at stanford.edu
Title
Cited by
Cited by
Year
The effect of stress on the dielectric properties of barium strontium titanate thin films
TM Shaw, Z Suo, M Huang, E Liniger, RB Laibowitz, JD Baniecki
Applied physics letters 75 (14), 2129-2131, 1999
4141999
(Ba, Sr) TiO 3 dielectrics for future stacked-capacitor DRAM
DE Kotecki, JD Baniecki, H Shen, RB Laibowitz, KL Saenger, JJ Lian, ...
IBM Journal of Research and Development 43 (3), 367-382, 1999
2631999
Dielectric relaxation of thin films from 1 mHz to 20 GHz
JD Baniecki, RB Laibowitz, TM Shaw, PR Duncombe, DA Neumayer, ...
Applied physics letters 72 (4), 498-500, 1998
1911998
Tuneable ferroelectric decoupling capacitor
TM Shaw, WD Pricer, DA Neumayer, JD Baniecki, RB Laibowitz
US Patent 6,888,714, 2005
982005
Hydrogen induced tunnel emission in thin film capacitors
JD Baniecki, RB Laibowitz, TM Shaw, C Parks, J Lian, H Xu, QY Ma
Journal of Applied Physics 89 (5), 2873-2885, 2001
912001
Chemisorption of water and carbon dioxide on nanostructured BaTiO3–SrTiO3 (001) surfaces
JD Baniecki, M Ishii, K Kurihara, K Yamanaka, T Yano, K Shinozaki, ...
Journal of Applied Physics 106 (5), 2009
832009
Surface core-level shifts of strontium observed in photoemission of barium strontium titanate thin films
JD Baniecki, M Ishii, T Shioga, K Kurihara, S Miyahara
Applied physics letters 89 (16), 2006
812006
Investigation of the importance of interface and bulk limited transport mechanisms on the leakage current of high dielectric constant thin film capacitors
JD Baniecki, T Shioga, K Kurihara, N Kamehara
Journal of applied physics 94 (10), 6741-6748, 2003
722003
Layer capacitor element and production process as well as electronic device
K Kurihara, T Shioga, JD Baniecki, M Kurashina
US Patent 7,161,793, 2007
692007
Hall effect measurements on epitaxial SmNiO 3 thin films and implications for antiferromagnetism
SD Ha, R Jaramillo, DM Silevitch, F Schoofs, K Kerman, JD Baniecki, ...
Physical Review B 87 (12), 125150, 2013
632013
Photoemission and quantum chemical study of SrTiO 3 (001) surfaces and their interaction with CO 2
JD Baniecki, M Ishii, K Kurihara, K Yamanaka, T Yano, K Shinozaki, ...
Physical Review B 78 (19), 195415, 2008
632008
Compensation doping of thin films
M Copel, JD Baniecki, PR Duncombe, D Kotecki, R Laibowitz, ...
Applied physics letters 73 (13), 1832-1834, 1998
601998
Effects of annealing conditions on charge loss mechanisms in MOCVD Ba0· 7Sr0· 3TiO3 thin film capacitors
JD Baniecki, RB Laibowitz, TM Shaw, KL Saenger, PR Duncombe, ...
Journal of the European Ceramic Society 19 (6-7), 1457-1461, 1999
591999
Probe card and testing method of semiconductor chip, capacitor and manufacturing method thereof
Y Yamagishi, T Shioga, JD Baniecki, K Kurihara
US Patent 7,102,367, 2006
582006
vapor-induced leakage degradation of thin-film capacitors with Pt and electrodes
JD Baniecki, JS Cross, M Tsukada, J Watanabe
Applied physics letters 81 (20), 3837-3839, 2002
512002
Decoupling capacitor with low inductance for high-frequency digital applications
Y Imanaka
Fujitsu Sci. Tech. J. 38 (1), 22-30, 2002
512002
Plating method, semiconductor device fabrication method and circuit board fabrication method
M Mizukoshi, K Nakagawa, T Shioga, K Kurihara, JD Baniecki
US Patent 7,670,940, 2010
492010
Density functional theory and experimental study of the electronic structure and transport properties of La, V, Nb, and Ta doped SrTiO3
JD Baniecki, M Ishii, H Aso, K Kurihara, D Ricinschi
Journal of Applied Physics 113 (1), 2013
482013
Thin film capacitor and method of manufacturing the same
T Shioga, JD Baniecki, K Kurihara
US Patent 6,853,051, 2005
482005
Semiconductor device, method of manufacturing the same, capacitor structure, and method of manufacturing the same
K Kurihara, T Shioga, JD Baniecki
US Patent 7,298,050, 2007
452007
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