Man Hoi Wong
Man Hoi Wong
Assistant Professor of Electrical and Computer Engineering, University of Massachusetts Lowell
Verified email at uml.edu
Title
Cited by
Cited by
Year
Depletion-mode Ga2O3 metal-oxide-semiconductor field-effect transistors on β-Ga2O3 (010) substrates and temperature dependence of their device characteristics
M Higashiwaki, K Sasaki, T Kamimura, MH Wong, D Krishnamurthy, ...
Applied Physics Letters 103 (12), 123511, 2013
5002013
Field-Plated Ga< sub> 2</sub> O< sub> 3</sub> MOSFETs With a Breakdown Voltage of Over 750 V
MH Wong, K Sasaki, A Kuramata, S Yamakoshi, M Higashiwaki
Electron Device Letters, IEEE 37 (2), 212-215, 2016
379*2016
How to make ohmic contacts to organic semiconductors
Y Shen, AR Hosseini, MH Wong, GG Malliaras
ChemPhysChem 5 (1), 16-25, 2004
3662004
N-polar GaN∕ AlGaN∕ GaN high electron mobility transistors
S Rajan, A Chini, MH Wong, JS Speck, UK Mishra
Journal of Applied Physics 102 (4), 044501, 2007
2362007
Band alignment and electrical properties of Al2O3/β-Ga2O3 heterojunctions
T Kamimura, K Sasaki, MH Wong, D Krishnamurthy, A Kuramata, T Masui, ...
Applied Physics Letters 104 (19), 192104, 2014
1542014
N-polar GaN epitaxy and high electron mobility transistors
MH Wong, S Keller, Nidhi, S Dasgupta, DJ Denninghoff, S Kolluri, ...
Semiconductor Science and Technology 28 (7), 074009, 2013
1532013
CAVET on bulk GaN substrates achieved with MBE-regrown AlGaN/GaN layers to suppress dispersion
S Chowdhury, MH Wong, BL Swenson, UK Mishra
Electron Device Letters, IEEE 33 (1), 41-43, 2012
1502012
Current status and scope of gallium nitride-based vertical transistors for high-power electronics application
S Chowdhury, BL Swenson, MH Wong, UK Mishra
Semiconductor Science and Technology 28 (7), 074014, 2013
1342013
Enhancement-mode Ga2O3 MOSFETs with Si-ion-implanted source and drain
MH Wong, Y Nakata, A Kuramata, S Yamakoshi, M Higashiwaki
Applied Physics Express 10 (4), 041101, 2017
1092017
Growth and electrical characterization of N-face AlGaN/GaN heterostructures
S Rajan, M Wong, Y Fu, F Wu, JS Speck, UK Mishra
Japanese journal of applied physics 44 (11L), L1478, 2005
982005
Electrochemical growth of ZnO nano-rods on polycrystalline Zn foil
MH Wong, A Berenov, X Qi, MJ Kappers, ZH Barber, B Illy, Z Lockman, ...
Nanotechnology 14 (9), 968, 2003
932003
Acceptor doping of β-Ga2O3 by Mg and N ion implantations
MH Wong, CH Lin, A Kuramata, S Yamakoshi, H Murakami, Y Kumagai, ...
Applied Physics Letters 113 (10), 102103, 2018
872018
Charge transport in doped organic semiconductors
Y Shen, K Diest, MH Wong, BR Hsieh, DH Dunlap, GG Malliaras
Physical Review B 68 (8), 081204, 2003
852003
Current Aperture Vertical β-Ga2O3 MOSFETs Fabricated by N-and Si-Ion Implantation Doping
MH Wong, K Goto, H Murakami, Y Kumagai, M Higashiwaki
IEEE Electron Device Letters 40 (3), 431-434, 2019
822019
N-face high electron mobility transistors with low buffer leakage and low parasitic resistance
UK Mishra, Y Pei, S Rajan, MH Wong
US Patent 7,935,985, 2011
792011
Low nonalloyed Ohmic contact resistance to nitride high electron mobility transistors using N-face growth
MH Wong, Y Pei, T Palacios, L Shen, A Chakraborty, LS McCarthy, ...
Applied Physics Letters 91 (23), 232103-232103-3, 2007
772007
Influence of threading dislocation density on early degradation in AlGaN/GaN high electron mobility transistors
M Ťapajna, SW Kaun, MH Wong, F Gao, T Palacios, UK Mishra, JS Speck, ...
Applied Physics Letters 99 (22), 223501, 2011
762011
Molecular beam epitaxy for high-performance Ga-face GaN electron devices
SW Kaun, MH Wong, UK Mishra, JS Speck
Semiconductor Science and Technology 28 (7), 074001, 2013
752013
Effects of threading dislocation density on the gate leakage of AlGaN/GaN heterostructures for high electron mobility transistors
SW Kaun, MH Wong, S Dasgupta, S Choi, R Chung, UK Mishra, JS Speck
Applied physics express 4 (2), 024101, 2011
752011
Anomalous Fe diffusion in Si-ion-implanted β–Ga2O3 and its suppression in Ga2O3 transistor structures through highly resistive buffer layers
MH Wong, K Sasaki, A Kuramata, S Yamakoshi, M Higashiwaki
Applied Physics Letters 106 (3), 032105, 2015
722015
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