フォロー
Masatoshi Koyama
Masatoshi Koyama
Osaka Institute of Technology
確認したメール アドレス: oit.ac.jp - ホームページ
タイトル
引用先
引用先
Semiconductor device and method of producing the same
M Koyama
US Patent App. 15/299,056, 2017
82017
Electron transport in InAs/AlGaSb ballistic rectifiers
T Maemoto, M Koyama, M Furukawa, H Takahashi, S Sasa, M Inoue
Journal of Physics: Conference Series 38 (1), 112, 2006
72006
Improved electrical performance of solution-processed zinc oxide-based thin-film transistors with bilayer structures
K Oura, H Wada, M Koyama, T Maemoto, S Sasa
Journal of Information Display 23 (1), 105-113, 2022
62022
Study for Enhancement of Terahertz Radiation Using GaSb/InAs Heterostructures
S Sasa, Y Kinoshita, M Tatsumi, M Koyama, T Maemoto, S Hamauchi, ...
Journal of Physics: Conference Series 906 (1), 012015, 2017
62017
Method for manufacturing semiconductor device
M Koyama, K Matsuura, T Komatani
US Patent 9,040,426, 2015
52015
Nonlinear electron transport in InAs/AlGaSb three-terminal ballistic junctions
M Koyama, T Inoue, N Amano, T Maemoto, S Sasa, M Inoue
Journal of Physics: Conference Series 109 (1), 012023, 2008
42008
Nonlinear electron transport properties and rectification effects in InAs/AlGaSb ballistic devices
M Koyama, T Inoue, N Amano, T Maemoto, S Sasa, M Inoue
physica status solidi c 5 (1), 107-110, 2008
42008
Characteristics of the Hf0.5Zr0.5O2 Thin Films Grown by a Chemical Solution Deposition Method
M YANO, T INOUE, H OTA, T KAWAMOTO, Y HIROFUJI, M KOYAMA, ...
材料 68 (10), 745-750, 2019
32019
Process of forming nitride semiconductor device
M Koyama
US Patent 9,799,508, 2017
32017
Effects of He plasma treatment on zinc oxide thin film transistors
S Shinya, T Kaneko, M Koyama, T Maemoto, S Sasa
2017 IEEE International Meeting for Future of Electron Devices, Kansai …, 2017
32017
Fabrication and characterization of fully transparent zno thin-film transistors and self-switching nano-diodes
Y Sun, K Ashida, S Sasaki, M Koyama, T Maemoto, S Sasa, S Kasai, ...
Journal of Physics: Conference Series 647 (1), 012068, 2015
32015
Method for fabricating semiconductor device
M Koyama
US Patent 8,896,025, 2014
32014
Electron transport properties in InAs four‐terminal ballistic junctions under weak magnetic fields
M Koyama, K Fujiwara, N Amano, T Maemoto, S Sasa, M Inoue
physica status solidi c 6 (6), 1501-1504, 2009
32009
Ballistic rectification effects in InAs/AlGaSb nanostructures
M Koyama, H Takahashi, T Maemoto, S Sasa, M Inoue
AIP Conference Proceedings 893 (1), 577-578, 2007
32007
Method for manufacturing semiconductor device
M Koyama, K Matsuura, T Komatani
US Patent 9,299,770, 2016
22016
Characterization of the VO2 thin films grown on glass substrates by MOD
H Wada, T Fukawa, K Toyota, M Koyama, N Hiroshiba, K Koike
Electronics and Communications in Japan 106 (3), e12403, 2023
12023
Repeated bending durability evaluation of ZnO and Al-doped ZnO thin films grown on cyclo-olefin polymer for flexible oxide device applications
K Oura, T Kumatani, H Wada, M Koyama, T Maemoto, S Sasa
Japanese Journal of Applied Physics 61 (10), 101001, 2022
12022
The thermal stability of -Ga2O3 thin films grown on (111) 3C-SiC template substrates
M Koyama, T Kaneko, S Fujiwara, T Maemoto, S Sasa
2019 Compound Semiconductor Week (CSW), 1-2, 2019
12019
Enhanced Terahertz Radiation from GaSb/InAs Heterostructures
S Sasa, M Tatsumi, Y Kinoshita, M Koyama, T Maemoto, I Kawayama, ...
2018 43rd International Conference on Infrared, Millimeter, and Terahertz …, 2018
12018
Mid-wavelength infrared focal plane array based on type II InAs/GaSb superlattices on InP substrate
M Sato, H Inada, H Obi, H Mori, T Fuyuki, S Balasekaran, D Kimura, ...
Infrared Physics & Technology 137, 105133, 2024
2024
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論文 1–20