Jim Speck
Jim Speck
Professor of Materials, UCSB
Verified email at ucsb.edu
Title
Cited by
Cited by
Year
Prospects for LED lighting
S Pimputkar, JS Speck, SP DenBaars, S Nakamura
Nature photonics 3 (4), 180-182, 2009
17192009
Polarization effects, surface states, and the source of electrons in AlGaN/GaN heterostructure field effect transistors
JP Ibbetson, PT Fini, KD Ness, SP DenBaars, JS Speck, UK Mishra
Applied Physics Letters 77 (2), 250-252, 2000
10502000
Role of threading dislocation structure on the x‐ray diffraction peak widths in epitaxial GaN films
B Heying, XH Wu, S Keller, Y Li, D Kapolnek, BP Keller, SP DenBaars, ...
Applied physics letters 68 (5), 643-645, 1996
10201996
Origin of defect-insensitive emission probability in In-containing (Al, In, Ga) N alloy semiconductors
SF Chichibu, A Uedono, T Onuma, BA Haskell, A Chakraborty, T Koyama, ...
Nature materials 5 (10), 810-816, 2006
720*2006
Domain configurations due to multiple misfit relaxation mechanisms in epitaxial ferroelectric thin films. I. Theory
JS Speck, W Pompe
Journal of applied physics 76 (1), 466-476, 1994
707*1994
Strain-induced polarization in wurtzite III-nitride semipolar layers
AE Romanov, TJ Baker, S Nakamura, JS Speck, ...
Journal of Applied Physics 100 (2), 023522, 2006
6942006
Structural characterization of nonpolar a-plane GaN thin films grown on r-plane sapphire
MD Craven, SH Lim, F Wu, JS Speck, SP DenBaars
Applied Physics Letters 81 (3), 469-471, 2002
6322002
Direct measurement of Auger electrons emitted from a semiconductor light-emitting diode under electrical injection: identification of the dominant mechanism for efficiency droop
J Iveland, L Martinelli, J Peretti, JS Speck, C Weisbuch
Physical review letters 110 (17), 177406, 2013
6162013
Control of GaN surface morphologies using plasma-assisted molecular beam epitaxy
B Heying, R Averbeck, LF Chen, E Haus, H Riechert, JS Speck
Journal of Applied Physics 88 (4), 1855-1860, 2000
5352000
Defect structure of metal‐organic chemical vapor deposition‐grown epitaxial (0001) GaN/Al2O3
XH Wu, LM Brown, D Kapolnek, S Keller, B Keller, SP DenBaars, ...
Journal of applied physics 80 (6), 3228-3237, 1996
5201996
Structural origin of V-defects and correlation with localized excitonic centers in InGaN/GaN multiple quantum wells
XH Wu, CR Elsass, A Abare, M Mack, S Keller, PM Petroff, SP DenBaars, ...
Applied Physics Letters 72 (6), 692-694, 1998
5151998
Polarization-induced charge and electron mobility in AlGaN/GaN heterostructures grown by plasma-assisted molecular-beam epitaxy
IP Smorchkova, CR Elsass, JP Ibbetson, R Vetury, B Heying, P Fini, ...
Journal of applied physics 86 (8), 4520-4526, 1999
5011999
Mosaic structure in epitaxial thin films having large lattice mismatch
V Srikant, JS Speck, DR Clarke
Journal of applied physics 82 (9), 4286-4295, 1997
4751997
Homoepitaxial growth of GaN under Ga-stable and N-stable conditions by plasma-assisted molecular beam epitaxy
EJ Tarsa, B Heying, XH Wu, P Fini, SP DenBaars, JS Speck
Journal of applied physics 82 (11), 5472-5479, 1997
4731997
Music emotion recognition: A state of the art review
YE Kim, EM Schmidt, R Migneco, BG Morton, P Richardson, J Scott, ...
Proc. ismir 86, 937-952, 2010
4712010
High-power AlGaN/GaN HEMTs for ka-band applications
T Palacios, A Chakraborty, S Rajan, C Poblenz, S Keller, SP DenBaars, ...
IEEE Electron device letters 26 (11), 781-783, 2005
4532005
Electrical characterization of GaN junctions with and without threading dislocations
P Kozodoy, JP Ibbetson, H Marchand, PT Fini, S Keller, JS Speck, ...
Applied physics letters 73 (7), 975-977, 1998
4201998
Dislocation mediated surface morphology of GaN
B Heying, EJ Tarsa, CR Elsass, P Fini, SP DenBaars, JS Speck
Journal of Applied Physics 85 (9), 6470-6476, 1999
4151999
Structural evolution in epitaxial metalorganic chemical vapor deposition grown GaN films on sapphire
D Kapolnek, XH Wu, B Heying, S Keller, BP Keller, UK Mishra, ...
Applied Physics Letters 67 (11), 1541-1543, 1995
3951995
Method for fabrication of semipolar (Al, In, Ga, B) N based light emitting diodes
H Sato, H Hirasawa, RB Chung, SP DenBaars, JS Speck, S Nakamura
US Patent 8,148,713, 2012
3632012
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