Kosuke Nagashio
Kosuke Nagashio
確認したメール アドレス: material.t.u-tokyo.ac.jp
タイトル
引用先
引用先
Contact resistivity and current flow path at metal/graphene contact
K Nagashio, T Nishimura, K Kita, A Toriumi
Applied Physics Letters 97 (14), 143514, 2010
3382010
Crystalline graphdiyne nanosheets produced at a gas/liquid or liquid/liquid interface
R Matsuoka, R Sakamoto, K Hoshiko, S Sasaki, H Masunaga, K Nagashio, ...
Journal of the American Chemical Society 139 (8), 3145-3152, 2017
2002017
Metal/graphene contact as a performance killer of ultra-high mobility graphene analysis of intrinsic mobility and contact resistance
K Nagashio, T Nishimura, K Kita, A Toriumi
2009 IEEE International Electron Devices Meeting (IEDM), 1-4, 2009
1892009
Electrical transport properties of graphene on SiO2 with specific surface structures
K Nagashio, T Yamashita, T Nishimura, K Kita, A Toriumi
Journal of Applied Physics 110 (2), 024513, 2011
1652011
Desorption kinetics of GeO from structure
SK Wang, K Kita, CH Lee, T Tabata, T Nishimura, K Nagashio, A Toriumi
Journal of applied physics 108 (5), 054104, 2010
1632010
Opportunities and challenges for Ge CMOS–Control of interfacing field on Ge is a key
A Toriumi, T Tabata, CH Lee, T Nishimura, K Kita, K Nagashio
Microelectronic Engineering 86 (7-9), 1571-1576, 2009
1632009
Ge/GeO2 interface control with high pressure oxidation for improving electrical characteristics
CH Lee, T Tabata, T Nishimura, K Nagashio, K Kita, A Toriumi
ECS Transactions 19 (1), 165, 2009
1622009
Mobility variations in mono-and multi-layer graphene films
K Nagashio, T Nishimura, K Kita, A Toriumi
Applied physics express 2 (2), 025003, 2009
1412009
High-Electron-Mobilityn-MOSFETs With Two-Step Oxidation
CH Lee, T Nishimura, K Nagashio, K Kita, A Toriumi
IEEE transactions on electron devices 58 (5), 1295-1301, 2011
1342011
Layer-by-layer dielectric breakdown of hexagonal boron nitride
Y Hattori, T Taniguchi, K Watanabe, K Nagashio
ACS nano 9 (1), 916-921, 2015
1062015
Density-of-states limited contact resistance in graphene field-effect transistors
K Nagashio, A Toriumi
Japanese Journal of Applied Physics 50 (7R), 070108, 2011
1062011
Ge MOSFETs performance: Impact of Ge interface passivation
CH Lee, T Nishimura, T Tabata, SK Wang, K Nagashio, K Kita, A Toriumi
2010 International Electron Devices Meeting, 18.1. 1-18.1. 4, 2010
1062010
Growth mechanism of twin-related and twin-free facet Si dendrites
K Nagashio, K Kuribayashi
Acta Materialia 53 (10), 3021-3029, 2005
1062005
Systematic investigation of the intrinsic channel properties and contact resistance of monolayer and multilayer graphene field-effect transistor
K Nagashio, T Nishimura, K Kita, A Toriumi
Japanese Journal of Applied Physics 49 (5R), 051304, 2010
1032010
High-electron-mobility Ge n-channel metal–oxide–semiconductor field-effect transistors with high-pressure oxidized Y2O3
T Nishimura, CH Lee, T Tabata, SK Wang, K Nagashio, K Kita, A Toriumi
Applied physics express 4 (6), 064201, 2011
862011
Record-high electron mobility in Ge n-MOSFETs exceeding Si universality
CH Lee, T Nishimura, N Saido, K Nagashio, K Kita, A Toriumi
2009 IEEE International Electron Devices Meeting (IEDM), 1-4, 2009
762009
Reexamination of the solidification behavior of undercooled Ni–Sn eutectic melts
M Li, K Nagashio, K Kuribayashi
Acta materialia 50 (12), 3241-3252, 2002
632002
Fully dry PMMA transfer of graphene on h-BN using a heating/cooling system
T Uwanno, Y Hattori, T Taniguchi, K Watanabe, K Nagashio
2D Materials 2 (4), 041002, 2015
592015
Isotope tracing study of GeO desorption mechanism from GeO2/Ge stack using 73Ge and 18O
SK Wang, K Kita, T Nishimura, K Nagashio, A Toriumi
Japanese Journal of Applied Physics 50 (4S), 04DA01, 2011
582011
Material potential and scalability challenges of germanium CMOS
A Toriumi, CH Lee, SK Wang, T Tabata, M Yoshida, DD Zhao, ...
2011 International Electron Devices Meeting, 28.4. 1-28.4. 4, 2011
502011
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論文 1–20