Mattia Musolino
Mattia Musolino
LFoundry
確認したメール アドレス: pdi-berlin.de
タイトル
引用先
引用先
Double-copy constructions and unitarity cuts
Z Bern, S Davies, J Nohle
Physical Review D 93 (10), 105015, 2016
40*2016
Compatibility of the selective area growth of GaN nanowires on AlN-buffered Si substrates with the operation of light emitting diodes
M Musolino, A Tahraoui, S Fernández-Garrido, O Brandt, A Trampert, ...
Nanotechnology 26 (8), 085605, 2015
262015
High-temperature growth of GaN nanowires by molecular beam epitaxy: toward the material quality of bulk GaN
JK Zettler, C Hauswald, P Corfdir, M Musolino, L Geelhaar, H Riechert, ...
Crystal Growth & Design 15 (8), 4104-4109, 2015
242015
Memory-induced chaos in cardiac excitation
J Landaw, A Garfinkel, JN Weiss, Z Qu
Physical review letters 118 (13), 138101, 2017
22*2017
A physical model for the reverse leakage current in (In, Ga) N/GaN light-emitting diodes based on nanowires
M Musolino, D Van Treeck, A Tahraoui, L Scarparo, C De Santi, ...
Journal of Applied Physics 119 (4), 044502, 2016
192016
Understanding peculiarities in the optoelectronic characteristics of light emitting diodes based on (In, Ga) N/GaN nanowires
M Musolino, A Tahraoui, F Limbach, J Lähnemann, U Jahn, O Brandt, ...
Applied Physics Letters 105 (8), 083505, 2014
192014
A modified Shockley equation taking into account the multi-element nature of light emitting diodes based on nanowire ensembles
M Musolino, A Tahraoui, D van Treeck, L Geelhaar, H Riechert
Nanotechnology 27 (27), 275203, 2016
42016
Growth, fabrication, and investigation of light-emitting diodes based on GaN nanowires
M Musolino
Berlin: Humboldt-Universität zu Berlin, 2016
32016
The hydride vapor phase epitaxy of GaN on silicon covered by nanostructures
U Jahn, M Musolino, J Lähnemann, P Dogan, SF Garrido, JF Wang, K Xu, ...
Semiconductor Science and Technology 31 (6), 065018, 2016
22016
Effect of varying three-dimensional strain on the emission properties of light-emitting diodes based on (In,Ga)N/GaN nanowires
M Musolino, A Tahraoui, L Geelhaar, F Sacconi, F Panetta, C De Santi, ...
Physical Review Applied 7, 044014, 2017
12017
Multiscale approach for the study of optoelectronic properties of InGaN/GaN nanowire light-emitting diodes
F Sacconi, F Panetta, MA der Maur, A Di Carlo, A Pecchia, M Musolino, ...
2015 IEEE 15th International Conference on Nanotechnology (IEEE-NANO), 1551-1554, 2015
12015
Electroluminescence and current–voltage measurements of single-(In,Ga)N/GaN-nanowire light-emitting diodes in a nanowire ensemble
HRLG David van Treeck, Johannes Ledig, Gregor Scholz, Jonas Lähnemann ...
Beilstein J. Nanotechnol. 10, 1177-1187, 2019
2019
The effect of the three-dimensional strain variation on the emission properties of light-emitting diodes based on (In, Ga) N/GaN nanowires
M Musolino, F Sacconi, A Tahraoui, F Panetta, C De Santi, M Meneghini, ...
arXiv preprint arXiv:1704.01569, 2017
2017
Deep level transient spectroscopy on light-emitting diodes based on (In, Ga) N/GaN nanowire ensembles
M Musolino, M Meneghini, L Scarparo, C De Santi, A Tahraoui, ...
Gallium Nitride Materials and Devices X 9363, 936325, 2015
2015
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