关注
Sergey Nikishin
Sergey Nikishin
Professor of Electrical Engineering, Texas Tech University
在 ttu.edu 的电子邮件经过验证
标题
引用次数
引用次数
年份
High quality GaN grown on Si (111) by gas source molecular beam epitaxy with ammonia
SA Nikishin, NN Faleev, VG Antipov, S Francoeur, L Grave de Peralta, ...
Applied physics letters 75 (14), 2073-2075, 1999
2831999
Luminescence of as-grown and thermally annealed GaAsN/GaAs
S Francoeur, G Sivaraman, Y Qiu, S Nikishin, H Temkin
Applied physics letters 72 (15), 1857-1859, 1998
1861998
High quality GaN–InGaN heterostructures grown on (111) silicon substrates
JW Yang, CJ Sun, Q Chen, MZ Anwar, M Asif Khan, SA Nikishin, ...
Applied physics letters 69 (23), 3566-3568, 1996
1461996
Raman studies of nitrogen incorporation in
T Prokofyeva, T Sauncy, M Seon, M Holtz, Y Qiu, S Nikishin, H Temkin
Applied physics letters 73 (10), 1409-1411, 1998
1311998
AlN/AlGaInN superlattice light-emitting diodes at 280 nm
G Kipshidze, V Kuryatkov, K Zhu, B Borisov, M Holtz, S Nikishin, H Temkin
Journal of applied physics 93 (3), 1363-1366, 2003
1082003
gate dielectric with 0.5 nm equivalent oxide thickness
H Harris, K Choi, N Mehta, A Chandolu, N Biswas, G Kipshidze, ...
Applied physics letters 81 (6), 1065-1067, 2002
1082002
AlGaInN-based ultraviolet light-emitting diodes grown on Si (111)
G Kipshidze, V Kuryatkov, B Borisov, M Holtz, S Nikishin, H Temkin
Applied physics letters 80 (20), 3682-3684, 2002
1052002
Excitons bound to nitrogen clusters in GaAsN
S Francoeur, SA Nikishin, C Jin, Y Qiu, H Temkin
Applied physics letters 75 (11), 1538-1540, 1999
1041999
Ordering effects in Raman spectra of coherently strained GaAs 1− x N x
AM Mintairov, PA Blagnov, VG Melehin, NN Faleev, JL Merz, Y Qiu, ...
Physical Review B 56 (24), 15836, 1997
1041997
Method of epitaxial growth of high quality nitride layers on silicon substrates
H Temkin, SA Nikishin
US Patent 6,391,748, 2002
942002
High-quality AlN grown on Si (111) by gas-source molecular-beam epitaxy with ammonia
SA Nikishin, VG Antipov, S Francoeur, NN Faleev, GA Seryogin, ...
Applied physics letters 75 (4), 484-486, 1999
921999
Selective growth of high quality GaN on Si (111) substrates
M Seon, T Prokofyeva, M Holtz, SA Nikishin, NN Faleev, H Temkin
Applied physics letters 76 (14), 1842-1844, 2000
912000
Si-doped layers grown by molecular beam epitaxy with ammonia
B Borisov, V Kuryatkov, Y Kudryavtsev, R Asomoza, S Nikishin, DY Song, ...
Applied physics letters 87 (13), 132106, 2005
902005
Vibrational properties of AlN grown on (111)-oriented silicon
T Prokofyeva, M Seon, J Vanbuskirk, M Holtz, SA Nikishin, NN Faleev, ...
Physical Review B 63 (12), 125313, 2001
852001
Composition dependence of the optical phonon energies in hexagonal
M Holtz, T Prokofyeva, M Seon, K Copeland, J Vanbuskirk, S Williams, ...
Journal of applied Physics 89 (12), 7977-7982, 2001
812001
The anodization voltage influence on the properties of TiO2 nanotubes grown by electrochemical oxidation
Y Alivov, M Pandikunta, S Nikishin, ZY Fan
Nanotechnology 20 (22), 225602, 2009
732009
Mg and O codoping in p-type GaN and
G Kipshidze, V Kuryatkov, B Borisov, Y Kudryavtsev, R Asomoza, ...
Applied physics letters 80 (16), 2910-2912, 2002
702002
Thermodynamic considerations in epitaxial growth of solid solutions
Y Qiu, SA Nikishin, H Temkin, VA Elyukhin, YA Kudriavtsev
Applied physics letters 70 (21), 2831-2833, 1997
691997
Growth of single phase with high nitrogen concentration by metal–organic molecular beam epitaxy
Y Qiu, SA Nikishin, H Temkin, NN Faleev, YA Kudriavtsev
Applied physics letters 70 (24), 3242-3244, 1997
681997
Digital alloys of AlN/AlGaN for deep UV light emitting diodes
SA Nikishin, M Holtz, H Temkin
Japanese journal of applied physics 44 (10R), 7221, 2005
622005
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