Tetsuya Suemitsu
Tetsuya Suemitsu
確認したメール アドレス: tohoku.ac.jp
タイトル引用先
An analysis of the kink phenomena in InAlAs/InGaAs HEMT's using two-dimensional device simulation
T Suemitsu, T Enoki, N Sano, M Tomizawa, Y Ishii
IEEE Transactions on Electron Devices 45 (12), 2390-2399, 1998
1321998
30-nm two-step recess gate InP-based InAlAs/InGaAs HEMTs
T Suemitsu, H Yokoyama, T Ishii, T Enoki, G Meneghesso, E Zanoni
IEEE Transactions on Electron devices 49 (10), 1694-1700, 2002
952002
Optical study of high-biased AlGaN/GaN high-electron-mobility transistors
N Shigekawa, K Shiojima, T Suemitsu
Journal of applied physics 92 (1), 531-535, 2002
942002
High-performance 0.1-/spl mu/m gate enhancement-mode InAlAs/InGaAs HEMT's using two-step recessed gate technology
T Suemitsu, H Yokoyama, Y Umeda, T Enoki, Y Ishii
IEEE Transactions on Electron Devices 46 (6), 1074-1080, 1999
771999
Improved recessed-gate structure for sub-0.1-µm-gate InP-based high electron mobility transistors
T Suemitsu, T Enoki, H Yokoyama, Y Ishii
Japanese journal of applied physics 37 (3S), 1365, 1998
711998
Emission of terahertz radiation from dual grating gate plasmon-resonant emitters fabricated with InGaP/InGaAs/GaAs material systems
T Otsuji, YM Meziani, T Nishimura, T Suemitsu, W Knap, E Sano, T Asano, ...
Journal of Physics: Condensed Matter 20 (38), 384206, 2008
682008
30-nm-gate InP-based lattice-matched high electron mobility transistors with 350 GHz cutoff frequency
T Suemitsu, T Ishii, H Yokoyama, T Enoki, Y Ishii, T Tamamura
JAPANESE JOURNAL OF APPLIED PHYSICS PART 2 LETTERS 38, L 154-L 156, 1999
681999
Ultrahigh sensitive sub-terahertz detection by InP-based asymmetric dual-grating-gate high-electron-mobility transistors and their broadband characteristics
Y Kurita, G Ducournau, D Coquillat, A Satou, K Kobayashi, ...
Applied Physics Letters 104 (25), 251114, 2014
672014
Electroluminescence characterization of AlGaN/GaN high-electron-mobility transistors
N Shigekawa, K Shiojima, T Suemitsu
Applied Physics Letters 79 (8), 1196-1198, 2001
632001
30-nm-gate InAlAs/InGaAs HEMTs lattice-matched to InP substrates
T Suemitsu, T Ishii, H Yokoyama, Y Umeda, T Enoki, Y Ishii, T Tamamura
International Electron Devices Meeting 1998. Technical Digest (Cat. No …, 1998
451998
Correlation between current–voltage characteristics and dislocations for n-GaN Schottky contacts
K Shiojima, T Suemitsu, M Ogura
Applied Physics Letters 78 (23), 3636-3638, 2001
442001
Emission of terahertz radiation from two-dimensional electron systems in semiconductor nano-and hetero-structures
T Otsuji, T Watanabe, A El Moutaouakil, H Karasawa, T Komori, A Satou, ...
Journal of Infrared, Millimeter, and Terahertz Waves 32 (5), 629-645, 2011
412011
Control of epitaxy of graphene by crystallographic orientation of a Si substrate toward device applications
H Fukidome, R Takahashi, S Abe, K Imaizumi, H Handa, HC Kang, ...
Journal of Materials Chemistry 21 (43), 17242-17248, 2011
362011
Current-driven detection of terahertz radiation using a dual-grating-gate plasmonic detector
S Boubanga-Tombet, Y Tanimoto, A Satou, T Suemitsu, Y Wang, ...
Applied Physics Letters 104 (26), 262104, 2014
352014
Body contacts in InP-based InAlAs/InGaAs HEMTs and their effects on breakdown voltage and kink suppression
R Suemitsu, T Enoki, Y Ishii
Electronics Letters 31 (9), 758-759, 1995
311995
Correlation between current–voltage characteristics and dislocations evaluated with submicrometer Schottky contacts on grown by metalorganic chemical …
K Shiojima, T Suemitsu
Journal of Vacuum Science & Technology B: Microelectronics and Nanometer …, 2003
282003
Epitaxial graphene top-gate FETs on silicon substrates
HC Kang, H Karasawa, Y Miyamoto, H Handa, H Fukidome, T Suemitsu, ...
Solid-State Electronics 54 (10), 1071-1075, 2010
262010
Intrinsic transit delay and effective electron velocity of AlGaN/GaN high electron mobility transistors
T Suemitsu, K Shiojima, T Makimura, N Shigekawa
Japanese journal of applied physics 44 (1L), L211, 2005
262005
An intrinsic delay extraction method for Schottky gate field effect transistors
T Suemitsu
IEEE electron device letters 25 (10), 669-671, 2004
262004
An 0.03 μm gate-length enhancement-mode InAlAs/InGaAs/InP MODFET's with 300 GHz fTand 2 S/mm extrinsic transconductance
D Xu, T Suemitsu, J Osaka, Y Umeda, Y Yamane, Y Ishii, T Ishii, ...
IEEE Electron Device Letters 20 (5), 206-208, 1999
261999
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