| Nanometer‐sized silicon crystallites prepared by excimer laser ablation in constant pressure inert gas T Yoshida, S Takeyama, Y Yamada, K Mutoh Applied Physics Letters 68 (13), 1772-1774, 1996 | 350 | 1996 |
| Optical properties of silicon nanocrystallites prepared by excimer laser ablation in inert gas Y Yamada, T Orii, I Umezu, STS Takeyama, TYT Yoshida Japanese journal of applied physics 35 (2S), 1361, 1996 | 197 | 1996 |
| Network system Y Yamada, N Suzuki, T Yoshida, T Makino US Patent App. 10/600,972, 2004 | 159 | 2004 |
| Electroluminescence of silicon nanocrystallites prepared by pulsed laser ablation in reduced pressure inert gas T Yoshida, Y Yamada, T Orii Journal of applied physics 83 (10), 5427-5432, 1998 | 158 | 1998 |
| Optoelectronic material, device using the same and method for manufacturing optoelectronic material Y Yamada, T Yoshida, S Takeyama, Y Matsuda, K Mutoh, ... US Patent 6,730,934, 2004 | 104 | 2004 |
| Interface microstructure of titanium thin‐film/silicon single‐crystal substrate correlated with electrical barrier heights S Ogawa, T Kouzaki, T Yoshida, R Sinclair Journal of applied physics 70 (2), 827-832, 1991 | 82 | 1991 |
| Optoelectronic material, device using the same and method for manufacturing optoelectronic material Y Yamada, T Yoshida, S Takeyama, Y Matsuda, K Mutoh US Patent 6,838,743, 2005 | 79 | 2005 |
| Photoacoustic and luminescence spectra of CdS fine particles T Arai, T Yoshida, T Ogawa Japanese journal of applied physics 26 (3R), 396, 1987 | 75 | 1987 |
| Structures and optical properties of silicon nanocrystallites prepared by pulsed-laser ablation in inert background gas N Suzuki, T Makino, Y Yamada, T Yoshida, S Onari Applied Physics Letters 76 (11), 1389-1391, 2000 | 63 | 2000 |
| Monodispersed, nonagglomerated silicon nanocrystallites N Suzuki, T Makino, Y Yamada, T Yoshida, T Seto Applied Physics Letters 78 (14), 2043-2045, 2001 | 62 | 2001 |
| Stoichiometric indium oxide thin films prepared by pulsed laser deposition in pure inert background gas Y Yamada, N Suzuki, T Makino, T Yoshida Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films 18 (1 …, 2000 | 60 | 2000 |
| Dependence of thermal stability of the titanium silicide/silicon structure on impurities S Ogawa, T Yoshida, T Kouzaki Applied physics letters 56 (8), 725-727, 1990 | 56 | 1990 |
| Annealing effects on structures and optical properties of silicon nanostructured films prepared by pulsed-laser ablation in inert background gas T Makino, Y Yamada, N Suzuki, T Yoshida, S Onari Journal of Applied Physics 90 (10), 5075-5080, 2001 | 53 | 2001 |
| Size classification of Si nanoparticles formed by pulsed laser ablation in helium background gas T Makino, N Suzuki, Y Yamada, T Yoshida, T Seto, N Aya Applied Physics A 69, S243-S247, 1999 | 53 | 1999 |
| Fine-particle classification apparatus and functional material production apparatus T Yoshida, T Makino, N Suzuki, Y Yamada US Patent 6,454,862, 2002 | 32 | 2002 |
| Effects of thermal processes on photoluminescence of silicon nanocrystallites prepared by pulsed laser ablation I Umezu, K Shibata, S Yamaguchi, A Sugimura, Y Yamada, T Yoshida Journal of applied physics 84 (11), 6448-6450, 1998 | 27 | 1998 |
| Method and apparatus for fabricating quantum dot functional structure, quantum dot functional structure, and optically functioning device N Suzuki, T Makino, Y Yamada, T Yoshida, T Seto, N Aya US Patent 6,648,975, 2003 | 26 | 2003 |
| Thermally Stable, Low‐Leakage Self‐Aligned Titanium Silicide Junctions T Yoshida, S Ogawa, S Okuda, T Kouzaki, K Tsukamoto Journal of the Electrochemical Society 137 (6), 1914, 1990 | 23 | 1990 |
| Fine particle classification apparatus and method for classifying aerosol particles in a sheath gas T Yoshida, T Makino, N Suzuki, Y Yamada US Patent 6,809,314, 2004 | 18 | 2004 |
| Method of fabricating semiconductor device T Yoshida, S Ogawa US Patent 5,330,921, 1994 | 17 | 1994 |
Takafumi SetoProfessor, Kanazawa UniversityVerified email at staff.kanazawa-u.ac.jp
