ChoongHyun Lee
ChoongHyun Lee
IBM Research
確認したメール アドレス: us.ibm.com
タイトル
引用先
引用先
Desorption kinetics of GeO from structure
SK Wang, K Kita, CH Lee, T Tabata, T Nishimura, K Nagashio, A Toriumi
Journal of applied physics 108 (5), 054104, 2010
1632010
Opportunities and challenges for Ge CMOS–Control of interfacing field on Ge is a key
A Toriumi, T Tabata, CH Lee, T Nishimura, K Kita, K Nagashio
Microelectronic Engineering 86 (7-9), 1571-1576, 2009
1632009
Ge/GeO2 interface control with high pressure oxidation for improving electrical characteristics
CH Lee, T Tabata, T Nishimura, K Nagashio, K Kita, A Toriumi
ECS Transactions 19 (1), 165, 2009
1622009
Ultraviolet light emitting diode
DT Emerson, AC Abare, MJ Bergmann
US Patent 6,664,560, 2003
1432003
High-Electron-Mobilityn-MOSFETs With Two-Step Oxidation
CH Lee, T Nishimura, K Nagashio, K Kita, A Toriumi
IEEE transactions on electron devices 58 (5), 1295-1301, 2011
1342011
Method and system for locating a wireless network access point at a mobile computing device
GD Hillman
US Patent 7,054,627, 2006
1092006
Ge MOSFETs performance: Impact of Ge interface passivation
CH Lee, T Nishimura, T Tabata, SK Wang, K Nagashio, K Kita, A Toriumi
2010 International Electron Devices Meeting, 18.1. 1-18.1. 4, 2010
1062010
Biopsy and coagulant device
WR Krause, FC Classe
US Patent 6,702,760, 2004
1002004
High-electron-mobility Ge n-channel metal–oxide–semiconductor field-effect transistors with high-pressure oxidized Y2O3
T Nishimura, CH Lee, T Tabata, SK Wang, K Nagashio, K Kita, A Toriumi
Applied physics express 4 (6), 064201, 2011
862011
Record-high electron mobility in Ge n-MOSFETs exceeding Si universality
CH Lee, T Nishimura, N Saido, K Nagashio, K Kita, A Toriumi
2009 IEEE International Electron Devices Meeting (IEDM), 1-4, 2009
762009
Material potential and scalability challenges of germanium CMOS
A Toriumi, CH Lee, SK Wang, T Tabata, M Yoshida, DD Zhao, ...
2011 International Electron Devices Meeting, 28.4. 1-28.4. 4, 2011
502011
Characterization of electron mobility in ultrathin body germanium-on-insulator metal-insulator-semiconductor field-effect transistors
C Hyun Lee, T Nishimura, T Tabata, DD Zhao, K Nagashio, A Toriumi
Applied Physics Letters 102 (23), 232107, 2013
482013
Enhancement of thermal stability and water resistance in yttrium-doped GeO2/Ge gate stack
C Lu, C Hyun Lee, W Zhang, T Nishimura, K Nagashio, A Toriumi
Applied Physics Letters 104 (9), 092909, 2014
402014
Structural and thermodynamic consideration of metal oxide doped GeO2 for gate stack formation on germanium
C Lu, CH Lee, W Zhang, T Nishimura, K Nagashio, A Toriumi
Journal of Applied Physics 116 (17), 174103, 2014
352014
Junctionless Ge p-channel metal–oxide–semiconductor field-effect transistors fabricated on ultrathin Ge-on-insulator substrate
DD Zhao, T Nishimura, CH Lee, K Nagashio, K Kita, A Toriumi
Applied physics express 4 (3), 031302, 2011
342011
Oxygen potential engineering of interfacial layer for deep sub-nm EOT high-k gate stacks on Ge
CH Lee, C Lu, T Tabata, WF Zhang, T Nishimura, K Nagashio, A Toriumi
2013 IEEE International Electron Devices Meeting, 2.5. 1-2.5. 4, 2013
332013
Salicide field effect transistors with improved borderless contact structures and a method of fabrication
KB Thei, MT Lei, SG Wuu
US Patent 6,710,413, 2004
32*2004
Experimental and analytical characterization of dual-gated germanium junctionless p-channel metal–oxide–semiconductor field-effect transistors
DD Zhao, CH Lee, T Nishimura, K Nagashio, GA Cheng, A Toriumi
Japanese Journal of Applied Physics 51 (4S), 04DA03, 2012
312012
Comprehensive study of GeO2 oxidation, GeO desorption and GeO2-metal interaction -understanding of Ge processing kinetics for perfect interface control-
K Kita, SK Wang, M Yoshida, CH Lee, K Nagashio, T Nishimura, ...
2009 IEEE International Electron Devices Meeting (IEDM), 1-4, 2009
312009
Subnanometer scaling of HfO2/metal electrode gate stacks
JJ Peterson, CD Young, J Barnett, S Gopalan, J Gutt, CH Lee, HJ Li, ...
Electrochemical and Solid State Letters 7 (8), G164, 2004
302004
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