フォロー
YUJIN KIM
YUJIN KIM
確認したメール アドレス: yale.edu
タイトル
引用先
引用先
Ferroelectricity and Antiferroelectricity of Doped Thin HfO2‐Based Films
MH Park, YH Lee, HJ Kim, YJ Kim, T Moon, KD Kim, J Mueller, A Kersch, ...
Advanced Materials 27 (11), 1811-1831, 2015
10092015
Evolution of phases and ferroelectric properties of thin Hf0. 5Zr0. 5O2 films according to the thickness and annealing temperature
M Hyuk Park, H Joon Kim, Y Jin Kim, W Lee, T Moon, C Seong Hwang
Applied Physics Letters 102 (24), 2013
7212013
The effects of crystallographic orientation and strain of thin Hf0. 5Zr0. 5O2 film on its ferroelectricity
M Hyuk Park, H Joon Kim, Y Jin Kim, T Moon, C Seong Hwang
Applied Physics Letters 104 (7), 2014
4042014
Thin Hf xZr1- xO2 Films: A New Lead-Free System for Electrostatic Supercapacitors with Large Energy Storage Density and Robust Thermal Stability.
MH Park, HJ Kim, YJ Kim, T Moon, KD Kim, CS Hwang
Advanced Energy Materials 4 (16), 2014
3362014
Grain size engineering for ferroelectric Hf0. 5Zr0. 5O2 films by an insertion of Al2O3 interlayer
HJ Kim, MH Park, YJ Kim, YH Lee, W Jeon, T Gwon, T Moon, KD Kim, ...
Applied Physics Letters 105 (19), 2014
2492014
A study on the wake-up effect of ferroelectric Hf 0.5 Zr 0.5 O 2 films by pulse-switching measurement
HJ Kim, MH Park, YJ Kim, YH Lee, T Moon, K Do Kim, SD Hyun, ...
Nanoscale 8 (3), 1383-1389, 2016
2432016
Ferroelectricity in undoped-HfO 2 thin films induced by deposition temperature control during atomic layer deposition
KD Kim, MH Park, HJ Kim, YJ Kim, T Moon, YH Lee, SD Hyun, T Gwon, ...
Journal of Materials Chemistry C 4 (28), 6864-6872, 2016
2142016
Toward a multifunctional monolithic device based on pyroelectricity and the electrocaloric effect of thin antiferroelectric HfxZr1− xO2 films
MH Park, HJ Kim, YJ Kim, T Moon, K Do Kim, CS Hwang
Nano Energy 12, 131-140, 2015
2082015
Effect of forming gas annealing on the ferroelectric properties of Hf0. 5Zr0. 5O2 thin films with and without Pt electrodes
M Hyuk Park, H Joon Kim, Y Jin Kim, W Lee, H Kyeom Kim, ...
Applied Physics Letters 102 (11), 2013
2072013
Understanding the formation of the metastable ferroelectric phase in hafnia–zirconia solid solution thin films
MH Park, YH Lee, HJ Kim, YJ Kim, T Moon, K Do Kim, SD Hyun, ...
Nanoscale 10 (2), 716-725, 2018
2002018
Effect of Zr Content on the Wake-Up Effect in Hf1–xZrxO2 Films
MH Park, HJ Kim, YJ Kim, YH Lee, T Moon, KD Kim, SD Hyun, F Fengler, ...
ACS applied materials & interfaces 8 (24), 15466-15475, 2016
1972016
Study on the degradation mechanism of the ferroelectric properties of thin Hf0. 5Zr0. 5O2 films on TiN and Ir electrodes
MH Park, HJ Kim, YJ Kim, W Lee, T Moon, KD Kim, CS Hwang
Applied Physics Letters 105 (7), 2014
1752014
Study on the size effect in Hf0. 5Zr0. 5O2 films thinner than 8 nm before and after wake-up field cycling
MH Park, HJ Kim, YJ Kim, YH Lee, T Moon, KD Kim, SD Hyun, CS Hwang
Applied Physics Letters 107 (19), 2015
1572015
Ferroelectric properties and switching endurance of Hf0.5Zr0.5O2 films on TiN bottom and TiN or RuO2 top electrodes
MH Park, HJ Kim, YJ Kim, W Jeon, T Moon, CS Hwang
physica status solidi (RRL)–Rapid Research Letters 8 (6), 532-535, 2014
1492014
Giant Negative Electrocaloric Effects of Hf0.5 Zr0.5 O2 Thin Films.
MH Park, HJ Kim, YJ Kim, T Moon, KD Kim, YH Lee, SD Hyun, CS Hwang
Advanced Materials (Deerfield Beach, Fla.) 28 (36), 7956-7961, 2016
1272016
Scale-up and optimization of HfO2-ZrO2 solid solution thin films for the electrostatic supercapacitors
K Do Kim, YH Lee, T Gwon, YJ Kim, HJ Kim, T Moon, SD Hyun, HW Park, ...
Nano Energy 39, 390-399, 2017
1072017
Study on the internal field and conduction mechanism of atomic layer deposited ferroelectric Hf 0.5 Zr 0.5 O 2 thin films
MH Park, HJ Kim, YJ Kim, T Moon, KD Kim, YH Lee, SD Hyun, CS Hwang
Journal of Materials Chemistry C 3 (24), 6291-6300, 2015
1012015
A comprehensive study on the mechanism of ferroelectric phase formation in hafnia-zirconia nanolaminates and superlattices
MH Park, HJ Kim, G Lee, J Park, YH Lee, YJ Kim, T Moon, KD Kim, ...
Applied Physics Reviews 6 (4), 2019
932019
Time-Dependent Negative Capacitance Effects in Al2O3/BaTiO3 Bilayers
YJ Kim, H Yamada, T Moon, YJ Kwon, CH An, HJ Kim, KD Kim, YH Lee, ...
Nano letters 16 (7), 4375-4381, 2016
912016
Morphotropic Phase Boundary of Hf1–xZrxO2 Thin Films for Dynamic Random Access Memories
MH Park, YH Lee, HJ Kim, YJ Kim, T Moon, KD Kim, SD Hyun, CS Hwang
ACS applied materials & interfaces 10 (49), 42666-42673, 2018
802018
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