| The methods to determine flat-band voltage VFBin semiconductor of a MOS structure K Piskorski, HM Przewlocki The 33rd International Convention MIPRO, 37-42, 2010 | 57 | 2010 |
| Theory and applications of internal photoemission in the MOS system at low electric fields HM Przewlocki Solid-State Electronics 45 (8), 1241-1250, 2001 | 40 | 2001 |
| The triangular voltage sweep method as a tool in studies of mobile charge in MOS structures HM Przewłocki, W Marciniak physica status solidi (a) 29 (1), 265-274, 1975 | 28 | 1975 |
| The inflection point of the capacitance-voltage, C (VG), characteristic and the flat-band voltage of metal-oxide-semiconductor structures HM Przewlocki, T Gutt, K Piskorski Journal of Applied Physics 115 (20), 2014 | 26 | 2014 |
| Photoelectrical measurements of the local value of the contact potential difference in the metal–insulator semiconductor (MIS) structures A Kudla, HM Przewlocki, L Borowicz, D Brzezinska, W Rzodkiewicz Thin Solid Films 450 (1), 203-206, 2004 | 26 | 2004 |
| New ways to measure the work function difference in MOS structures SK Krawczyk, HM Przewłocki, A Jakubowski Revue de Physique Appliquée 17 (8), 473-480, 1982 | 23 | 1982 |
| Distributions of barrier heights, difference of effective contact potential, and local values of flat-band voltage in Al–SiO2–Si and poly–Si–SiO2–Si structures HM Przewlocki, A Kudla, K Piskorski, D Brzezinska Thin Solid Films 516 (12), 4184-4189, 2008 | 22 | 2008 |
| Distribution of the contact-potential difference local values over the gate area of MOS structures HM Przewlocki, A Kudla, D Brzezinska, HZ Massoud Microelectronic Engineering 72 (1-4), 165-173, 2004 | 22 | 2004 |
| Internal photoemission characteristics of metal–insulator–semiconductor structures at low electric fields in the insulator HM Przewlocki Journal of applied physics 85 (9), 6610-6618, 1999 | 22 | 1999 |
| Effects of stress annealing in nitrogen on the effective contact-potential difference, charges, and traps at the interface of metal–oxide–semiconductor devices HM Przewlocki, HZ Massoud Journal of applied physics 92 (4), 2198-2201, 2002 | 21 | 2002 |
| Photoelectric phenomena in metal‐insulator‐semiconductor structures at low electric fields in the insulator HM Przewlocki Journal of applied physics 78 (4), 2550-2557, 1995 | 20 | 1995 |
| Effects of stress annealing in nitrogen on the index of refraction of silicon dioxide layers in metal–oxide–semiconductor devices HZ Massoud, HM Przewlocki Journal of applied physics 92 (4), 2202-2206, 2002 | 19 | 2002 |
| Distribution of potential barrier height local values at Al-SiO2 and Si-SiO2 interfaces of the metal-oxide-semiconductor structures K Piskorski, HM Przewlocki Bulletin of the Polish Academy of Sciences Technical Sciences, 461-468-461-468, 2006 | 17 | 2006 |
| Diagnostic measurements in LSI/VLSI integrated circuits production A Jakubowski World scientific, 1991 | 16 | 1991 |
| A simple technique of work function difference determination in MOS structures HM Przewlocki, S Krawczyk, A Jakubowski physica status solidi (a) 65 (1), 253-257, 1981 | 16 | 1981 |
| The importance, the nature and the measurement methods of the φMS factor in MOS structures HM Przewłocki Electron Technol 27 (1), 7-42, 1994 | 15 | 1994 |
| Investigation of barrier height distributions over the gate area of Al-SiO2-Si structures K Piskorski, HM Przewłocki Journal of Telecommunications and information technology, 49-54, 2007 | 12 | 2007 |
| Comparison of methods for φMS factor determination in metal-oxide-semiconductor (MOS) structures HM Przewlocki Electron Technol 26 (4), 3-23, 1993 | 12 | 1993 |
| Universal system for photoelectric characterisation of semiconductor structures S Porebski, P Machalica, J Zajac, L Borowicz, A Kudła, HM Przewłocki IEE Proceedings-Science, Measurement and Technology 150 (4), 148-152, 2003 | 11 | 2003 |
| Analysis of chemical shifts in Auger electron spectra versus sputtering time from passivated surfaces A Domanowska, B Adamowicz, P Bidziński, A Klimasek, J Szewczenko, ... Optica Applicata 41 (2), 441--447, 2011 | 10 | 2011 |
