Matthias Dworzak
Matthias Dworzak
Hella KGaA Hueck & Co., Rixbecker Str. 75, 59552 Lippstadt, Germany
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Bound exciton and donor–acceptor pair recombinations in ZnO
BK Meyer, H Alves, DM Hofmann, W Kriegseis, D Forster, F Bertram, ...
physica status solidi (b) 241 (2), 231-260, 2004
Optical properties of the nitrogen acceptor in epitaxial ZnO
A Zeuner, H Alves, DM Hofmann, BK Meyer, A Hoffmann, U Haboeck, ...
physica status solidi (b) 234 (3), R7-R9, 2002
Excited-state carrier lifetime in single-walled carbon nanotubes
S Reich, M Dworzak, A Hoffmann, C Thomsen, MS Strano
Physical Review B 71 (3), 033402, 2005
Magneto-optical properties of bound excitons in ZnO
AV Rodina, M Strassburg, M Dworzak, U Haboeck, A Hoffmann, A Zeuner, ...
Physical Review B 69 (12), 125206, 2004
Recombination dynamics of localized excitons in InGaN quantum dots
T Bartel, M Dworzak, M Strassburg, A Hoffmann, A Strittmatter, D Bimberg
Applied physics letters 85 (11), 1946-1948, 2004
Lateral redistribution of excitons in CdSe/ZnSe quantum dots
M Strassburg, M Dworzak, H Born, R Heitz, A Hoffmann, M Bartels, ...
Applied physics letters 80 (3), 473-475, 2002
Identification of bound exciton complexes in ZnO
M Strassburg, A Rodina, M Dworzak, U Haboeck, IL Krestnikov, ...
physica status solidi (b) 241 (3), 607-611, 2004
Reconciliation of luminescence and Hall measurements on the ternary semiconductor
S Siebentritt, I Beckers, T Riemann, J Christen, A Hoffmann, M Dworzak
Applied Physics Letters 86 (9), 091909, 2005
Influence of structural nonuniformity and nonradiative processes on the luminescence efficiency of InGaAsN quantum wells
L Geelhaar, M Galluppi, G Jaschke, R Averbeck, H Riechert, T Remmele, ...
Applied physics letters 88 (1), 011903, 2006
Luminescence and Raman spectroscopy on MgB2
PM Rafailov, M Dworzak, C Thomsen
Solid state communications 122 (7-8), 455-458, 2002
ASD moduli spaces over four-manifolds with tree-like ends
T Kato
Geometry & Topology 8 (2), 779-830, 2004
Analysis of quantum dot formation and exciton localisation in the (Zn, Cd)(S, Se) system
M Strassburg, J Christen, M Dworzak, R Heitz, A Hoffmann, M Bartels, ...
physica status solidi (b) 229 (1), 529-532, 2002
Luminescence efficiency of InGaN/GaN quantum wells on bulk GaN substrate
M Dworzak, T Stempel, A Hoffmann, G Franssen, T Suski, R Czernecki, ...
MRS Online Proceedings Library (OPL) 892, 2005
Redistribution of localised excitons in CdSe/ZnSe quantum dot structures
M Strassburg, M Dworzak, R Heitz, A Hoffmann, J Christen, D Schikora
Materials Science and Engineering: B 88 (2-3), 302-306, 2002
Optical properties of InGaN/GaN quantum wells on sapphire and bulk GaN substrate
M Dworzak, T Stempel, A Hoffmann, G Franssen, S Grzanka, T Suski, ...
physica status solidi c 3 (6), 2078-2081, 2006
Resonant Gain in ZnSe Structures with Stacked CdSe Islands Grown in Stranski‐Krastanov Mode
M Strassburg, M Dworzak, A Hoffmann, R Heitz, UW Pohl, D Bimberg, ...
physica status solidi (a) 180 (1), 281-285, 2000
Optical properties of InGaN quantum dots
M Dworzak, T Bartel, M Straßburg, IL Krestnikov, A Hoffmann, R Seguin, ...
Superlattices and Microstructures 36 (4-6), 763-772, 2004
Gain mechanisms in field‐free InGaN layers grown on sapphire and bulk GaN substrate
M Dworzak, T Stempel Pereira, M Bügler, A Hoffmann, G Franssen, ...
physica status solidi (RRL)–Rapid Research Letters 1 (4), 141-143, 2007
Relaxationsmechanismen in optisch angeregten ZnCdSe-Quantenpunktstrukturen
M Dworzak
Diplomarbeit, TU-Berlin, 2002
Dephasing and energy relaxation processes in self‐assembled In (Ga) As/GaAs quantum dots
M Dworzak, P Zimmer, H Born, A Hoffmann
AIP Conference Proceedings 772 (1), 633-634, 2005
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