Hiroshi Yamaguchi
Hiroshi Yamaguchi
NTT Basic Research Laboratories
Verified email at lab.ntt.co.jp - Homepage
TitleCited byYear
Low-temperature growth of GaAs and AlAs-GaAs quantum-well layers by modified molecular beam epitaxy
Y Horikoshi, M Kawashima, H Yamaguchi
Japanese Journal of Applied Physics 25 (10A), L868, 1986
4601986
Migration-enhanced epitaxy of GaAs and AlGaAs
Y Horikoshi, M Kawashima, H Yamaguchi
Japanese journal of applied physics 27 (2R), 169, 1988
4071988
Microscopic thickness determination of thin graphite films formed on SiC from quantized oscillation in reflectivity of low-energy electrons
H Hibino, H Kageshima, F Maeda, M Nagase, Y Kobayashi, H Yamaguchi
Physical Review B 77 (7), 075413, 2008
3622008
Bit storage and bit flip operations in an electromechanical oscillator
I Mahboob, H Yamaguchi
Nature nanotechnology 3 (5), 275, 2008
2172008
Motion detection of a micromechanical resonator embedded in a dc SQUID
S Etaki, M Poot, I Mahboob, K Onomitsu, H Yamaguchi, HSJ Van der Zant
Nature Physics 4 (10), 785, 2008
1742008
Growth process of III–V compound semiconductors by migration-enhanced epitaxy
Y Horikoshi, H Yamaguchi, F Briones, M Kawashima
Journal of crystal growth 105 (1-4), 326-338, 1990
1641990
Coherent phonon manipulation in coupled mechanical resonators
H Okamoto, A Gourgout, CY Chang, K Onomitsu, I Mahboob, EY Chang, ...
Nature Physics 9 (8), 480, 2013
1542013
Atomic-scale imaging of strain relaxation via misfit dislocations in highly mismatched semiconductor heteroepitaxy: InAs/GaAs (111) A
H Yamaguchi, JG Belk, XM Zhang, JL Sudijono, MR Fahy, TS Jones, ...
Physical Review B 55 (3), 1337, 1997
1311997
Inhibitions of three dimensional island formation in InAs films grown on GaAs (111) A surface by molecular beam epitaxy
H Yamaguchi, MR Fahy, BA Joyce
Applied physics letters 69 (6), 776-778, 1996
1201996
Interconnect-free parallel logic circuits in a single mechanical resonator
I Mahboob, E Flurin, K Nishiguchi, A Fujiwara, H Yamaguchi
Nature communications 2, 198, 2011
1162011
Surface structure transitions on InAs and GaAs (001) surfaces
H Yamaguchi, Y Horikoshi
Physical Review B 51 (15), 9836, 1995
1161995
Conductance modulation by individual acceptors in Si nanoscale field-effect transistors
Y Ono, K Nishiguchi, A Fujiwara, H Yamaguchi, H Inokawa, Y Takahashi
Applied Physics Letters 90 (10), 102106, 2007
1052007
Phonon lasing in an electromechanical resonator
I Mahboob, K Nishiguchi, A Fujiwara, H Yamaguchi
Physical review letters 110 (12), 127202, 2013
1002013
Imaging of Friedel oscillation patterns of two-dimensionally accumulated electrons at epitaxially grown InAs (111) A surfaces
K Kanisawa, MJ Butcher, H Yamaguchi, Y Hirayama
Physical review letters 86 (15), 3384, 2001
942001
A scanning tunneling microscopy-Reflection high energy electron diffraction-Rate equation study of the molecular beam epitaxial growth of InAs on GaAs (001),(110) and (111) A …
BA Joyce, JL Sudijono, JG Belk, H Yamaguchi, XM Zhang, HT Dobbs, ...
Japanese journal of applied physics 36 (6S), 4111, 1997
921997
Phonon-cavity electromechanics
I Mahboob, K Nishiguchi, H Okamoto, H Yamaguchi
Nature Physics 8 (5), 387, 2012
882012
Stacking domains of epitaxial few-layer graphene on SiC (0001)
H Hibino, S Mizuno, H Kageshima, M Nagase, H Yamaguchi
Physical Review B 80 (8), 085406, 2009
832009
Theoretical study of epitaxial graphene growth on SiC (0001) surfaces
H Kageshima, H Hibino, M Nagase, H Yamaguchi
Applied Physics Express 2 (6), 065502, 2009
752009
Controllable coupling between flux qubit and nanomechanical resonator by magnetic field
F Xue, YD Wang, CP Sun, H Okamoto, H Yamaguchi, K Semba
New Journal of Physics 9 (2), 35, 2007
722007
Replacement of group‐III atoms on the growing surface during migration‐enhanced epitaxy
H Yamaguchi, Y Horikoshi
Journal of Applied Physics 68 (4), 1610-1615, 1990
571990
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