| Structural, electrical, and optical properties of p-type ZnO thin films with Ag dopant HS Kang, BD Ahn, JH Kim, GH Kim, SH Lim, HW Chang, SY Lee Applied Physics Letters 88 (20), 2006 | 328 | 2006 |
| Effect of indium composition ratio on solution-processed nanocrystalline InGaZnO thin film transistors GH Kim, B Du Ahn, HS Shin, WH Jeong, HJ Kim, HJ Kim Applied Physics Letters 94 (23), 2009 | 247 | 2009 |
| Formation mechanism of solution-processed nanocrystalline InGaZnO thin film as active channel layer in thin-film transistor GH Kim, HS Shin, B Du Ahn, KH Kim, WJ Park, HJ Kim Journal of the Electrochemical society 156 (1), H7, 2008 | 245 | 2008 |
| Inkjet-printed InGaZnO thin film transistor GH Kim, HS Kim, HS Shin, B Du Ahn, KH Kim, HJ Kim Thin solid films 517 (14), 4007-4010, 2009 | 207 | 2009 |
| Investigation of the effects of Mg incorporation into InZnO for high-performance and high-stability solution-processed thin film transistors GH Kim, WH Jeong, B Du Ahn, HS Shin, HJ Kim, HJ Kim, MK Ryu, ... Applied Physics Letters 96 (16), 2010 | 176 | 2010 |
| Synthesis and analysis of Ag-doped ZnO BD Ahn, HS Kang, JH Kim, GH Kim, HW Chang, SY Lee Journal of Applied Physics 100 (9), 2006 | 174 | 2006 |
| Investigation on doping dependency of solution-processed Ga-doped ZnO thin film transistor WJ Park, HS Shin, BD Ahn, GH Kim, SM Lee, KH Kim, HJ Kim Applied Physics Letters 93 (8), 2008 | 161 | 2008 |
| Investigating addition effect of hafnium in InZnO thin film transistors using a solution process WH Jeong, GH Kim, HS Shin, B Du Ahn, HJ Kim, MK Ryu, KB Park, ... Applied Physics Letters 96 (9), 2010 | 153 | 2010 |
| Investigation on the p-type formation mechanism of arsenic doped p-type ZnO thin film HS Kang, GH Kim, DL Kim, HW Chang, BD Ahn, SY Lee Applied Physics Letters 89 (18), 2006 | 140 | 2006 |
| Electrical, structural, and optical properties of ITO thin films prepared at room temperature by pulsed laser deposition JH Kim, KA Jeon, GH Kim, SY Lee Applied surface science 252 (13), 4834-4837, 2006 | 139 | 2006 |
| Electrical characteristics of solution‐processed InGaZnO thin film transistors depending on Ga concentration GH Kim, WH Jeong, HJ Kim physica status solidi (a) 207 (7), 1677-1679, 2010 | 98 | 2010 |
| High electrical performance of wet-processed indium zinc oxide thin-film transistors KB Park, JB Seon, GH Kim, M Yang, B Koo, HJ Kim, MK Ryu, SY Lee IEEE electron device letters 31 (4), 311-313, 2010 | 85 | 2010 |
| The effect of La in InZnO systems for solution-processed amorphous oxide thin-film transistors DN Kim, DL Kim, GH Kim, SJ Kim, YS Rim, WH Jeong, HJ Kim Applied Physics Letters 97 (19), 2010 | 74 | 2010 |
| A novel amorphous InGaZnO thin film transistor structure without source/drain layer deposition B Du Ahn, HS Shin, GH Kim, JS Park, HJ Kim Japanese journal of applied physics 48 (3S2), 03B019, 2009 | 65 | 2009 |
| Investigation on doping behavior of copper in ZnO thin film GH Kim, DL Kim, B Du Ahn, SY Lee, HJ Kim Microelectronics journal 40 (2), 272-275, 2009 | 65 | 2009 |
| Characteristics of gravure printed InGaZnO thin films as an active channel layer in thin film transistors Y Choi, GH Kim, WH Jeong, HJ Kim, BD Chin, JW Yu Thin Solid Films 518 (22), 6249-6252, 2010 | 64 | 2010 |
| Carrier-suppressing effect of scandium in InZnO systems for solution-processed thin film transistors Y Choi, GH Kim, WH Jeong, JH Bae, HJ Kim, JM Hong, JW Yu Applied Physics Letters 97 (16), 2010 | 63 | 2010 |
| Electrical properties of yttrium–indium–zinc-oxide thin film transistors fabricated using the sol–gel process and various yttrium compositions HS Shin, GH Kim, WH Jeong, B Du Ahn, HJ Kim Japanese journal of applied physics 49 (3S), 03CB01, 2010 | 52 | 2010 |
| Density-of-states modeling of solution-processed InGaZnO thin-film transistors CE Kim, EN Cho, P Moon, GH Kim, DL Kim, HJ Kim, I Yun IEEE Electron Device Letters 31 (10), 1131-1133, 2010 | 47 | 2010 |
| Effects of Hf incorporation in solution-processed Hf-InZnO TFTs WH Jeong, GH Kim, DL Kim, HS Shin, HJ Kim, MK Ryu, KB Park, JB Seon, ... Thin Solid Films 519 (17), 5740-5743, 2011 | 44 | 2011 |
