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Adha Sukma Aji
Adha Sukma Aji
Verified email at imass.nagoya-u.ac.jp
Title
Cited by
Cited by
Year
High Mobility WS2 Transistors Realized by Multilayer Graphene Electrodes and Application to High Responsivity Flexible Photodetectors
AS Aji, P Solís‐Fernández, HG Ji, K Fukuda, H Ago
Advanced Functional Materials 27 (47), 1703448, 2017
1252017
Surface-Mediated Aligned Growth of Monolayer MoS2 and In-Plane Heterostructures with Graphene on Sapphire
K Suenaga, HG Ji, YC Lin, T Vincent, M Maruyama, AS Aji, Y Shiratsuchi, ...
ACS nano 12 (10), 10032-10044, 2018
802018
Hydrogen-assisted epitaxial growth of monolayer tungsten disulfide and seamless grain stitching
HG Ji, YC Lin, K Nagashio, M Maruyama, P Solís-Fernández, A Sukma Aji, ...
Chemistry of Materials 30 (2), 403-411, 2018
702018
High output voltage generation of over 5 V from liquid motion on single-layer MoS2
AS Aji, R Nishi, H Ago, Y Ohno
Nano Energy 68, 104370, 2020
572020
Two-step synthesis and characterization of vertically stacked SnS–WS 2 and SnS–MoS 2 p–n heterojunctions
AS Aji, M Izumoto, K Suenaga, K Yamamoto, H Nakashima, H Ago
Physical Chemistry Chemical Physics 20 (2), 889-897, 2018
352018
van der Waals interaction-induced photoluminescence weakening and multilayer growth in epitaxially aligned WS 2
HG Ji, M Maruyama, AS Aji, S Okada, K Matsuda, H Ago
Physical Chemistry Chemical Physics 20 (47), 29790-29797, 2018
122018
Spectroscopy analysis of graphene like deposition using DC unbalanced magnetron sputtering on γ‐Al 2 O 3 buffer layer
AS Aji, Y Darma
AIP Conference Proceedings 1586 (1), 198-201, 2014
42014
Simulation of Leakage Current in Si/Ge/Si Quantum Dot Floating Gate MOSFET Using High‐K Material as Tunnel Oxide
AS Aji, MI Nugraha, Yudhistira, F Rahayu, Y Darma
AIP Conference Proceedings 1415 (1), 196-199, 2011
42011
Simulation of quantum dot floating gate MOSFET memory performance using various high-k material as tunnel oxide
AS Aji, Y Darma
AIP Conference Proceedings 1454 (1), 195-198, 2012
32012
Simulation of charge-trapping effect on floating gate Si/Ge/Si quantum dots MOSFET memory with high-к tunnel oxide
AS Aji, Y Darma
2013 3rd International Conference on Instrumentation, Communications …, 2013
22013
HF treatment effect for carbon deposition on silicon (111) by DC sputtering technique
AS Aji, Y Darma
AIP Conference Proceedings 1589 (1), 191-194, 2014
12014
Time dependence of carbon film deposition on using DC unbalanced magnetron sputtering
H Alfiadi, AS Aji, Y Darma
AIP Conference Proceedings 1586 (1), 97-100, 2014
12014
Quantum Size Effect Simulation on the Electronic Characteristic of Silicon Based Single Electron Transistor
MI Nugraha, AS Aji, Yudhistira, F Rahayu, Y Darma
AIP Conference Proceedings 1415 (1), 98-101, 2011
12011
MoS 2 Nanogenerators: Harvesting Energy from Droplet Movement.
AS Aji, Y Ohno
AAPPS Bulletin 30 (4), 2020
2020
Large voltage generator from water movement by single-layer MoS2
AS Aji, R Nishi, H Ago, Y Ohno
JSAP Annual Meetings Extended Abstracts The 66th JSAP Spring Meeting 2019 …, 2019
2019
High Performance Flexible Single-Layer WS2 Optoelectronics Devices Integrated with Multi-Layer Graphene Electrodes and Parylene-C Substrate
AS Aji, JH Goo, P Solis-Fernandez, K Fukuda, H Ago
JSAP Annual Meetings Extended Abstracts The 78th JSAP Autumn Meeting 2017 …, 2017
2017
Single-Layer WS2 Phototransistor with Multi-Layer Graphene Electrodes on a Flexible Parylene Substrate
AS Aji, T Shiiba, K Fukuda, H Ago
JSAP Annual Meetings Extended Abstracts, 127-127, 2016
2016
Surface treatment effect on Si (111) substrate for carbon deposition using DC unbalanced magnetron sputtering
AS Aji, MF Sahdan, IB Hendra, P Dinari, Y Darma
AIP Conference Proceedings 1656 (1), 2015
2015
Carbon film deposition on using DC unbalanced magnetron sputtering
AS Aji, Y Darma
AIP Conference Proceedings 1554 (1), 93-96, 2013
2013
Back Matter for Volume 1454
K Basar, S Viridi
AIP Conference Proceedings 1454 (1), backmatter, 2012
2012
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