Paul Fini
Paul Fini
Raytheon Vision Systems
Verified email at raytheon.com - Homepage
Title
Cited by
Cited by
Year
Polarization effects, surface states, and the source of electrons in AlGaN/GaN heterostructure field effect transistors
JP Ibbetson, PT Fini, KD Ness, SP DenBaars, JS Speck, UK Mishra
Applied Physics Letters 77 (2), 250-252, 2000
10542000
Origin of defect-insensitive emission probability in In-containing (Al, In, Ga) N alloy semiconductors
SF Chichibu, A Uedono, T Onuma, BA Haskell, A Chakraborty, T Koyama, ...
Nature materials 5 (10), 810-816, 2006
722*2006
Polarization-induced charge and electron mobility in AlGaN/GaN heterostructures grown by plasma-assisted molecular-beam epitaxy
IP Smorchkova, CR Elsass, JP Ibbetson, R Vetury, B Heying, P Fini, ...
Journal of applied physics 86 (8), 4520-4526, 1999
5011999
Homoepitaxial growth of GaN under Ga-stable and N-stable conditions by plasma-assisted molecular beam epitaxy
EJ Tarsa, B Heying, XH Wu, P Fini, SP DenBaars, JS Speck
Journal of applied physics 82 (11), 5472-5479, 1997
4741997
Electrical characterization of GaN junctions with and without threading dislocations
P Kozodoy, JP Ibbetson, H Marchand, PT Fini, S Keller, JS Speck, ...
Applied physics letters 73 (7), 975-977, 1998
4201998
Dislocation mediated surface morphology of GaN
B Heying, EJ Tarsa, CR Elsass, P Fini, SP DenBaars, JS Speck
Journal of Applied Physics 85 (9), 6470-6476, 1999
4161999
High-performance (Al,Ga)N-based solar-blind ultraviolet p–i–n detectors on laterally epitaxially overgrown GaN
G Parish, S Keller, P Kozodoy, JP Ibbetson, H Marchand, PT Fini, ...
Applied Physics Letters 75 (2), 247-249, 1999
3771999
High Al-content AlGaN/GaN MODFETs for ultrahigh performance
YF Wu, BP Keller, P Fini, S Keller, TJ Jenkins, LT Kehias, SP Denbaars, ...
IEEE Electron Device Letters 19 (2), 50-53, 1998
3271998
Microstructure of GaN laterally overgrown by metalorganic chemical vapor deposition
H Marchand, XH Wu, JP Ibbetson, PT Fini, P Kozodoy, S Keller, JS Speck, ...
Applied physics letters 73 (6), 747-749, 1998
2881998
Technique for the growth of planar semi-polar gallium nitride
TJ Baker, BA Haskell, PT Fini, SP DenBaars, JS Speck, S Nakamura
US Patent 7,220,324, 2007
2342007
Defect reduction in a-plane gallium nitride via lateral epitaxial overgrowth by hydride vapor-phase epitaxy
BA Haskell, F Wu, MD Craven, S Matsuda, PT Fini, T Fujii, K Fujito, ...
Applied physics letters 83 (4), 644-646, 2003
2232003
Emission mechanisms of bulk GaN and InGaN quantum wells prepared by lateral epitaxial overgrowth
SF Chichibu, H Marchand, MS Minsky, S Keller, PT Fini, JP Ibbetson, ...
Applied physics letters 74 (10), 1460-1462, 1999
2131999
Optimization of the surface morphologies and electron mobilities in GaN grown by plasma-assisted molecular beam epitaxy
B Heying, I Smorchkova, C Poblenz, C Elsass, P Fini, S Den Baars, ...
Applied Physics Letters 77 (18), 2885-2887, 2000
2112000
Structural and morphological characteristics of planar a-plane gallium nitride grown by hydride vapor phase epitaxy
BA Haskell, F Wu, S Matsuda, MD Craven, PT Fini, SP DenBaars, ...
Applied Physics Letters 83 (8), 1554-1556, 2003
1952003
Metalorganic chemical vapor deposition of high mobility AlGaN/GaN heterostructures
S Keller, G Parish, PT Fini, S Heikman, CH Chen, N Zhang, SP DenBaars, ...
Journal of applied physics 86 (10), 5850-5857, 1999
1811999
Heying B, Keller S, Mishra UK, DenBaars SP, Speck JS
XH Wu, P Fini, EJ Tarsa
J Cryst Growth 189 (19), 231, 1998
1751998
Characterization of planar semipolar gallium nitride films on spinel substrates
TJ Baker, BA Haskell, F Wu, PT Fini, JS Speck, S Nakamura
Japanese journal of applied physics 44 (7L), L920, 2005
1742005
Development of the IES method for evaluating the color rendition of light sources
A David, PT Fini, KW Houser, Y Ohno, MP Royer, KAG Smet, M Wei, ...
Optics Express 23 (12), 15888-15906, 2015
1662015
Defect reduction in -plane gallium nitride via lateral epitaxial overgrowth by hydride vapor phase epitaxy
BA Haskell, TJ Baker, MB McLaurin, F Wu, PT Fini, SP DenBaars, ...
Applied Physics Letters 86 (11), 111917, 2005
1652005
Mechanisms of lateral epitaxial overgrowth of gallium nitride by metalorganic chemical vapor deposition
H Marchand, JP Ibbetson, PT Fini, S Keller, SP DenBaars, JS Speck, ...
Journal of Crystal Growth 195 (1-4), 328-332, 1998
1401998
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Articles 1–20