フォロー
Jinshan Yao
Jinshan Yao
確認したメール アドレス: smail.nju.edu.cn
タイトル
引用先
引用先
Thermal stability enhancement in epitaxial alpha tin films by strain engineering
H Song, J Yao, Y Ding, Y Gu, Y Deng, MH Lu, H Lu, YF Chen
Advanced Engineering Materials 21 (10), 1900410, 2019
262019
Characteristics of thin InAlAs digital alloy avalanche photodiodes
W Wang, J Yao, J Wang, Z Deng, Z Xie, J Huang, H Lu, B Chen
Optics Letters 46 (16), 3841-3844, 2021
102021
Precursor solution-dependent secondary phase defects in CsPbBr 3 single crystal grown by inverse temperature crystallization
Y Cheng, M Zhu, F Wang, R Bai, J Yao, W Jie, Y Xu
Journal of Materials Chemistry A 9 (48), 27718-27726, 2021
92021
Wafer-Scale and Topologically Nontrivial α- Films Grown on by Molecular-Beam Epitaxy
Y Ding, H Song, J Huang, J Yao, Y Gu, L Wei, YB Chen, Y Deng, H Yuan, ...
Physical Review Applied 17 (1), 014015, 2022
82022
Large tunable bandgaps in the InAs/AlAs strain-compensated short-period superlattices grown by molecular beam epitaxy
J Yao, R Pan, W Wang, C Li, B Chen, H Lu, YF Chen
Applied Physics Letters 118 (25), 252103, 2021
42021
Multiple carrier transport in high-quality α-Sn films grown on CdTe (001) by molecular beam epitaxy
Y Ding, J Yao, Z Yuan, C Li, MH Lu, H Lu, YF Chen
Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films 39 (3 …, 2021
42021
Interband transitions of InAs/AlAs Short-Period superlattices grown by molecular beam epitaxy
L Yao, W Wang, J Yao, K Lu, H Lu, C Zheng, B Chen
Journal of Crystal Growth 605, 127071, 2023
32023
Annealing induced carrier activation and PL enhancement in Ge-on-Si grown by low temperature MBE
R Pan, Z Yuan, K Zhang, J Yao, C Li, M Lu, H Lu, YF Chen
Journal of Crystal Growth 588, 126668, 2022
32022
Multiple superconducting transitions in α-Sn/β-Sn mixed films grown by molecular beam epitaxy
Y Ding, B Li, J Yao, H Song, L Wei, Y Lu, J Huang, H Yuan, H Lu, ...
Journal of Vacuum Science & Technology A 41 (2), 2023
22023
Strain evolution and confinement effect in InAs/AlAs short-period superlattices studied by Raman spectroscopy
Y Zhao, K Lu, J Yao, J Ning, B Chen, H Lu, C Zheng
Scientific Reports 13 (1), 123, 2023
22023
Carrier localization effect in the photoluminescence of In composition engineered InAlAs random alloy
J Yu, Y Zhao, S Li, J Yao, L Yao, J Ning, Y Jiang, H Lu, B Chen, C Zheng
Journal of Luminescence 249, 119009, 2022
22022
Effective interface engineering for phonon manipulation in an Al/ErAs/GaAs system
J Pan, X Fan, K Zhang, Z Geng, J Yao, Y Deng, J Zhou, XJ Yan, MH Lu, ...
Materials Today Physics 28, 100897, 2022
12022
Room Temperature NUV‐To‐NIR Up‐and Down‐Conversion Photoluminescence in Erbium‐Doped GaAs
Y Cheng, Z Zuo, J Yao, K Zhang, Y Lu, C Li, Y Deng, X Zhang, H Lu, ...
Advanced Optical Materials, 2301616, 2024
2024
High-speed InAlAs digital alloy avalanche photodiode
W Wang, J Yao, L Li, H Ge, L Wang, L Zhu, Q Chen, H Lu, B Chen
Applied Physics Letters 123 (19), 2023
2023
High-Speed Mid-Wave Infrared Uni-Traveling Carrier Photodetector with Inductive Peaked Dewar Packaging
Z Shen, J Yao, J Huang, Z Dai, L Wang, F Liu, X Zou, B Peng, W Liu, H Lu, ...
Journal of Lightwave Technology, 2023
2023
Large redshift in photoluminescence of InAs/AlAs short-period superlattices due to highly ordered lateral composition modulation
J Yao, J Li, Q Zhang, Z Zuo, W Zhang, W Wang, C Li, B Chen, Y Deng, ...
Journal of Vacuum Science & Technology A 41 (4), 2023
2023
Epitaxial Growth of GaAs on Si (111) Controlled by Al/AlAs Interlayer.
C Menglin, FAN Xing, Z Weiwei, YAO Jinshan, PAN Rui, LI Chen, ...
Journal of Synthetic Crystals 51 (11), 2022
2022
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