| In vivo recordings of brain activity using organic transistors D Khodagholy, T Doublet, P Quilichini, M Gurfinkel, P Leleux, A Ghestem, ... Nature communications 4 (1), 1575, 2013 | 1034 | 2013 |
| High transconductance organic electrochemical transistors D Khodagholy, J Rivnay, M Sessolo, M Gurfinkel, P Leleux, LH Jimison, ... Nature communications 4 (1), 2133, 2013 | 905 | 2013 |
| Highly conformable conducting polymer electrodes for in vivo recordings D Khodagholy, T Doublet, M Gurfinkel, P Quilichini, E Ismailova, P Leleux, ... Advanced Materials 23 (36), H268, 2011 | 416 | 2011 |
| Time dependence of bias-stress-induced SiC MOSFET threshold-voltage instability measurements AJ Lelis, D Habersat, R Green, A Ogunniyi, M Gurfinkel, J Suehle, ... IEEE transactions on Electron Devices 55 (8), 1835-1840, 2008 | 377 | 2008 |
| Organic electrochemical transistor incorporating an ionogel as a solid state electrolyte for lactate sensing D Khodagholy, VF Curto, KJ Fraser, M Gurfinkel, R Byrne, D Diamond, ... Journal of Materials Chemistry 22 (10), 4440-4443, 2012 | 332 | 2012 |
| Electronic circuit reliability modeling JB Bernstein, M Gurfinkel, X Li, J Walters, Y Shapira, M Talmor Microelectronics Reliability 46 (12), 1957-1979, 2006 | 233 | 2006 |
| Measurement of barrier tissue integrity with an organic electrochemical transistor. LH Jimison, SA Tria, D Khodagholy, M Gurfinkel, E Lanzarini, A Hama, ... Advanced Materials (Deerfield Beach, Fla.) 24 (44), 5919-5923, 2012 | 220 | 2012 |
| Characterization of Transient Gate Oxide Trapping in SiC MOSFETs Using Fast–Techniques M Gurfinkel, HD Xiong, KP Cheung, JS Suehle, JB Bernstein, Y Shapira, ... IEEE Transactions on Electron Devices 55 (8), 2004-2012, 2008 | 151 | 2008 |
| High speed and high density organic electrochemical transistor arrays D Khodagholy, M Gurfinkel, E Stavrinidou, P Leleux, T Herve, S Sanaur, ... Applied Physics Letters 99 (16), 2011 | 124 | 2011 |
| Time-Dependent Dielectric Breakdown of 4H-SiC/ MOS Capacitors M Gurfinkel, JC Horst, JS Suehle, JB Bernstein, Y Shapira, KS Matocha, ... IEEE transactions on device and materials reliability 8 (4), 635-641, 2008 | 77 | 2008 |
| Characterization of electrically active defects in high-k gate dielectrics by using low frequency noise and charge pumping measurements HD Xiong, D Heh, M Gurfinkel, Q Li, Y Shapira, C Richter, G Bersuker, ... Microelectronic Engineering 84 (9-10), 2230-2234, 2007 | 71 | 2007 |
| Energy-and time-dependent dynamics of trap occupation in 4H-SiC MOSFETs S Potbhare, N Goldsman, A Akturk, M Gurfinkel, A Lelis, JS Suehle IEEE Transactions on Electron Devices 55 (8), 2061-2070, 2008 | 48 | 2008 |
| P. leleux, A. Ghestem, e. ismailova, T. Hervé, S. Sanaur, C. Bernard, GG Malliaras D Khodagholy, T Doublet, P Quilichini, M Gurfinkel Nat. Commun 4, 1575, 2013 | 36 | 2013 |
| Ultra-fast characterization of transient gate oxide trapping in SiC MOSFETs M Gurfinkel, J Suehle, JB Bernstein, Y Shapira, AJ Lelis, D Habersat, ... 2007 IEEE International Reliability Physics Symposium Proceedings. 45th …, 2007 | 30 | 2007 |
| Ultra-fast measurements of VTH instability in SiC MOSFETs due to positive and negative constant bias stress M Gurfinkel, J Suehle, JB Bernstein, Y Shapira, AJ Lelis, D Habersat, ... 2006 IEEE International Integrated Reliability Workshop Final Report, 49-53, 2006 | 19 | 2006 |
| Study of hot-carrier-induced photon emission from 90 nm Si MOSFETs M Gurfinkel, M Borenshtein, A Margulis, S Sade, Y Fefer, Y Weizman, ... Applied surface science 248 (1-4), 62-65, 2005 | 19 | 2005 |
| Stress-induced defect generation in HfO2/SiO2stacks observed by using charge pumping and low frequency noise measurements HD Xiong, D Heh, S Yang, X Zhu, M Gurfinkel, G Bersuker, DE Ioannou, ... 2008 IEEE International Reliability Physics Symposium, 319-323, 2008 | 18 | 2008 |
| Enhanced gate induced drain leakage current in HfO2 MOSFETs due to remote interface trap-assisted tunneling M Gurfinkel, JS Suehle, JB Bernstein, Y Shapira 2006 International Electron Devices Meeting, 1-4, 2006 | 14 | 2006 |
| Enhanced gate induced drain leakage current in HfO2 MOSFETs M Gurfinkel, JS Suehle, Y Shapira Microelectronic engineering 86 (11), 2157-2160, 2009 | 13 | 2009 |
| Ion implantation and SiC transistor performance M Gurfinkel, S Potbhare, HD Xiong, JS Suehle, Y Shapira, AJ Lelis, ... Journal of Applied Physics 105 (8), 2009 | 13 | 2009 |
George MalliarasPrince Philip Professor of Technology at University of Cambridge確認したメール アドレス: cam.ac.uk
