Stefano Dominici
Stefano Dominici
確認したメール アドレス: amat.com
タイトル
引用先
引用先
Role of defects in the thermal droop of InGaN-based light emitting diodes
C De Santi, M Meneghini, M La Grassa, B Galler, R Zeisel, M Goano, ...
Journal of Applied Physics 119 (9), 094501, 2016
522016
Numerical evaluation of Auger recombination coefficients in relaxed and strained germanium
S Dominici, H Wen, F Bertazzi, M Goano, E Bellotti
Applied Physics Letters 108 (21), 211103, 2016
132016
Challenges towards the simulation of GaN-based LEDs beyond the semiclassical framework
M Goano, F Bertazzi, X Zhou, M Mandurrino, S Dominici, M Vallone, ...
Physics and Simulation of Optoelectronic Devices XXIV 9742, 974202, 2016
132016
Numerical study on the optical and carrier recombination processes in GeSn alloy for E-SWIR and MWIR optoelectronic applications
S Dominici, H Wen, F Bertazzi, M Goano, E Bellotti
Optics express 24 (23), 26363-26381, 2016
92016
Trap-assisted tunneling contributions to subthreshold forward current in InGaN/GaN light-emitting diodes
M Mandurrino, M Goano, S Dominici, M Vallone, F Bertazzi, G Ghione, ...
Fourteenth International Conference on Solid State Lighting and LED-based …, 2015
42015
Modeling challenges for high-efficiency visible light-emitting diodes
F Bertazzi, S Dominici, M Mandurrino, D Robidas, X Zhou, M Vallone, ...
2015 IEEE 1st International Forum on Research and Technologies for Society …, 2015
22015
Thermal droop in InGaN-based LEDs: physical origin and dependence on material properties
C De Santi, M Meneghini, M La Grassa, N Trivellin, B Galler, R Zeisel, ...
Light-Emitting Diodes: Materials, Devices, and Applications for Solid State …, 2016
12016
Defect-related tunneling contributions to subthreshold forward current in GaN-based LEDs
M Mandurrino, G Verzellesi, M Goano, S Dominici, F Bertazzi, G Ghione, ...
2015 Fotonica AEIT Italian Conference on Photonics Technologies, 1-4, 2015
12015
Numerical investigation of efficiency loss mechanisms in light emitting diodes and determination of radiative and non-radiative lifetimes for infrared optoelectronics
S Dominici, P Debernardi, A Di Carlo, G Fiori, Å Haglund
2018
A comparative study of carrier lifetimes in ESWIR and MWIR materials: HgCdTe, InGaAs, InAsSb, and GeSn (Conference Presentation)
E Bellotti, H Wen, S Dominici, AL Glasmann
Infrared Technology and Applications XLIII 10177, 101771F, 2017
2017
Fourteenth International Conference on Solid State Lighting and LED-based Illumination Systems
JK Chang, WC Cheng, YP Chang, YY Kuo, CC Tsai, YC Huang, LY Chen, ...
SPIE 9571, E3, 2015
2015
2015 IEEE 1ST INTERNATIONAL FORUM ON RESEARCH AND TECHNOLOGIES FOR SOCIETY AND INDUSTRY, RTSI 2015-PROCEEDINGS
SM Karabanov, DV Suvorov, GP Gololobov, VS Gurov, DY Tarabrin, ...
2015
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