Tungsten Ditelluride: a layered semimetal CH Lee, EC Silva, L Calderin, MAT Nguyen, MJ Hollander, B Bersch, ... Scientific reports 5 (1), 10013, 2015 | 264 | 2015 |
Realizing large-scale, electronic-grade two-dimensional semiconductors YC Lin, B Jariwala, BM Bersch, K Xu, Y Nie, B Wang, SM Eichfeld, ... ACS nano 12 (2), 965-975, 2018 | 213 | 2018 |
Tuning the Electronic and Photonic Properties of Monolayer MoS2 via In Situ Rhenium Substitutional Doping K Zhang, BM Bersch, J Joshi, R Addou, CR Cormier, C Zhang, K Xu, ... Advanced Functional Materials 28 (16), 1706950, 2018 | 183 | 2018 |
Atomically thin half-van der Waals metals enabled by confinement heteroepitaxy N Briggs, B Bersch, Y Wang, J Jiang, RJ Koch, N Nayir, K Wang, ... Nature materials 19 (6), 637-643, 2020 | 140 | 2020 |
Epitaxial graphene/silicon carbide intercalation: a minireview on graphene modulation and unique 2D materials N Briggs, ZM Gebeyehu, A Vera, T Zhao, K Wang, ADLF Duran, B Bersch, ... Nanoscale 11 (33), 15440-15447, 2019 | 105 | 2019 |
Impact of PostLithography Polymer Residue on the Electrical Characteristics of MoS2 and WSe2 Field Effect Transistors J Liang, K Xu, B Toncini, B Bersch, B Jariwala, YC Lin, J Robinson, ... Advanced Materials Interfaces 6 (3), 1801321, 2019 | 73 | 2019 |
Considerations for utilizing sodium chloride in epitaxial molybdenum disulfide K Zhang, BM Bersch, F Zhang, NC Briggs, S Subramanian, K Xu, ... ACS applied materials & interfaces 10 (47), 40831-40837, 2018 | 72 | 2018 |
Considerations for utilizing sodium chloride in epitaxial molybdenum disulfide K Zhang, BM Bersch, F Zhang, NC Briggs, S Subramanian, K Xu, ... ACS applied materials & interfaces 10 (47), 40831-40837, 2018 | 72 | 2018 |
ACS nano H Liu, AT Neal, Z Zhu, Z Luo, X Xu, D Tomanek, PD Ye ACS Nano 8 (1031), 2014 | 70 | 2014 |
Bottom-up synthesis of vertically oriented two-dimensional materials RA Vilá, K Momeni, Q Wang, BM Bersch, N Lu, MJ Kim, LQ Chen, ... 2D Materials 3 (4), 041003, 2016 | 59 | 2016 |
Selective-area growth and controlled substrate coupling of transition metal dichalcogenides BM Bersch, SM Eichfeld, YC Lin, K Zhang, GR Bhimanapati, AF Piasecki, ... 2D Materials 4 (2), 025083, 2017 | 44 | 2017 |
Deconvoluting the Photonic and Electronic Response of 2D Materials: The Case of MoS2 K Zhang, NJ Borys, BM Bersch, GR Bhimanapati, K Xu, B Wang, K Wang, ... Scientific reports 7 (1), 16938, 2017 | 36 | 2017 |
Unexpected near-infrared to visible nonlinear optical properties from 2-D polar metals MA Steves, Y Wang, N Briggs, T Zhao, H El-Sherif, BM Bersch, ... Nano letters 20 (11), 8312-8318, 2020 | 26 | 2020 |
Modification of the Electronic Transport in Atomically Thin WSe2 by Oxidation YC Lin, BM Bersch, R Addou, K Xu, Q Wang, CM Smyth, B Jariwala, ... Advanced Materials Interfaces 7 (18), 2000422, 2020 | 15 | 2020 |
Facile route to templated growth of two-dimensional layered materials JA Robinson, SM Eichfeld, AF Piasecki, BM Bersch US Patent 10,465,276, 2019 | 13 | 2019 |
ACS Nano 12, 965 (2018) YC Lin, B Jariwala, BM Bersch, K Xu, Y Nie, B Wang, SM Eichfeld, ... | 11 | |
Scalable characterization of 2D gallium-intercalated epitaxial graphene H El-Sherif, N Briggs, B Bersch, M Pan, M Hamidinejad, S Rajabpour, ... ACS Applied Materials & Interfaces 13 (46), 55428-55439, 2021 | 7 | 2021 |
Confinement Heteroepitaxy: Realizing Atomically Thin, Half-van der Waals Materials N Briggs, B Bersch, Y Wang, N Nayir, RJ Koch, K Wang, M Kolmer, W Ko, ... arXiv preprint arXiv:1905.09962, 2019 | 4 | 2019 |
An Air-Stable and Atomically Thin Graphene/Gallium Superconducting Heterostructure B Bersch, N Briggs, Y Wang, J Jiang, K Wang, C Dong, S Subramanian, ... arXiv preprint arXiv:1905.09938, 2019 | 3 | 2019 |
Epitaxial Graphene Intercalation: A Route to Graphene Modulation and Unique 2D Materials N Briggs, ZM Gebeyehu, A Vera, T Zhao, K Wang, ADLF Duran, B Bersch, ... arXiv preprint arXiv:1905.09261, 2019 | 1 | 2019 |