Michael Gershenson
Michael Gershenson
Professor of Physics, Rutgers University
Verified email at physics.rutgers.edu
Cited by
Cited by
Elastomeric transistor stamps: reversible probing of charge transport in organic crystals
VC Sundar, J Zaumseil, V Podzorov, E Menard, RL Willett, T Someya, ...
Science 303 (5664), 1644-1646, 2004
Intrinsic charge transport on the surface of organic semiconductors
V Podzorov, E Menard, A Borissov, V Kiryukhin, JA Rogers, ...
Physical review letters 93 (8), 086602, 2004
Organic single‐crystal field‐effect transistors
RWI de Boer, ME Gershenson, AF Morpurgo, V Podzorov
physica status solidi (a) 201 (6), 1302-1331, 2004
Colloquium: Electronic transport in single-crystal organic transistors
ME Gershenson, V Podzorov, AF Morpurgo
Reviews of modern physics 78 (3), 973, 2006
High-mobility field-effect transistors based on transition metal dichalcogenides
V Podzorov, ME Gershenson, C Kloc, R Zeis, E Bucher
Applied Physics Letters 84 (17), 3301-3303, 2004
Field-effect transistors on rubrene single crystals with parylene gate insulator
V Podzorov, VM Pudalov, ME Gershenson
Applied physics letters 82 (11), 1739-1741, 2003
Electrostatic modification of novel materials
CH Ahn, A Bhattacharya, M Di Ventra, JN Eckstein, CD Frisbie, ...
Reviews of Modern Physics 78 (4), 1185, 2006
Single-crystal organic field effect transistors with the hole mobility
V Podzorov, SE Sysoev, E Loginova, VM Pudalov, ME Gershenson
Applied Physics Letters 83 (17), 3504-3506, 2003
High‐performance n‐and p‐type single‐crystal organic transistors with free‐space gate dielectrics
E Menard, V Podzorov, SH Hur, A Gaur, ME Gershenson, JA Rogers
Advanced materials 16 (23‐24), 2097-2101, 2004
Hall effect in the accumulation layers on the surface of organic semiconductors
V Podzorov, E Menard, JA Rogers, ME Gershenson
Physical review letters 95 (22), 226601, 2005
Low-density spin susceptibility and effective mass of mobile electrons in Si inversion layers
VM Pudalov, ME Gershenson, H Kojima, N Butch, EM Dizhur, ...
Physical review letters 88 (19), 196404, 2002
Interaction effects and phase relaxation in disordered systems
IL Aleiner, BL Altshuler, ME Gershenson
Waves in Random Media 9 (2), 201, 1999
Ultrasensitive hot-electron nanobolometers for terahertz astrophysics
J Wei, D Olaya, BS Karasik, SV Pereverzev, AV Sergeev, ME Gershenson
Nature nanotechnology 3 (8), 496-500, 2008
Martensitic accommodation strain and the metal-insulator transition in manganites
V Podzorov, BG Kim, V Kiryukhin, ME Gershenson, SW Cheong
Physical Review B 64 (14), 140406, 2001
Electronic functionalization of the surface of organic semiconductors with self-assembled monolayers
MF Calhoun, J Sanchez, D Olaya, ME Gershenson, V Podzorov
Nature materials 7 (1), 84-89, 2008
Superconducting nanocircuits for topologically protected qubits
S Gladchenko, D Olaya, E Dupont-Ferrier, B Douçot, LB Ioffe, ...
Nature Physics 5 (1), 48-53, 2009
Light quasiparticles dominate electronic transport in molecular crystal field-effect transistors
ZQ Li, V Podzorov, N Sai, MC Martin, ME Gershenson, M Di Ventra, ...
Physical review letters 99 (1), 016403, 2007
Quantum effects in disordered metal films
BL Altshuler, AG Aronov, ME Gershenson, YV Sharvin
Sov Sci Rev Sect A: Phys Rev 9, 223, 1987
Electron-phonon interaction in ultrathin Nb films
EM Gershenzon, ME Gershenzon, GN Gol’tsman, AM Lyul’kin, ...
Sov. Phys. JETP 70 (3), 505-511, 1990
Ultrafast carrier dynamics in pentacene, functionalized pentacene, tetracene, and rubrene single crystals
O Ostroverkhova, DG Cooke, FA Hegmann, JE Anthony, V Podzorov, ...
Applied physics letters 88 (16), 162101, 2006
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