Pierre Corfdir
Pierre Corfdir
ABB Corporate Research
確認したメール アドレス: ch.abb.com
タイトル
引用先
引用先
Exciton localization on basal stacking faults in -plane epitaxial lateral overgrown GaN grown by hydride vapor phase epitaxy
P Corfdir, P Lefebvre, J Levrat, A Dussaigne, JD Ganière, D Martin, ...
Journal of Applied Physics 105 (4), 043102, 2009
832009
Time-resolved spectroscopy on GaN nanocolumns grown by plasma assisted molecular beam epitaxy on Si substrates
P Corfdir, P Lefebvre, J Ristić, P Valvin, E Calleja, A Trampert, JD Ganière, ...
Journal of Applied Physics 105 (1), 013113, 2009
752009
Molecular beam epitaxy of single crystalline GaN nanowires on a flexible Ti foil
G Calabrese, P Corfdir, G Gao, C Pfüller, A Trampert, O Brandt, ...
Applied Physics Letters 108 (20), 202101, 2016
622016
Exciton localization mechanisms in wurtzite/zinc-blende GaAs nanowires
AM Graham, P Corfdir, M Heiss, S Conesa-Boj, E Uccelli, AF i Morral, ...
Physical Review B 87 (12), 125304, 2013
592013
Low-temperature time-resolved cathodoluminescence study of exciton dynamics involving basal stacking faults in -plane GaN
P Corfdir, J Ristić, P Lefebvre, T Zhu, D Martin, A Dussaigne, JD Ganière, ...
Applied Physics Letters 94 (20), 201115, 2009
532009
QCD-electroweak first-order phase transition in a supercooled universe
S Iso, PD Serpico, K Shimada
Physical review letters 119 (14), 141301, 2017
52*2017
Published (Erschienen)
D Abou-Ras, CT Koch, V Küstner, PA Van Aken, U Jahn, MA Contreras, ...
Thin Solid Films 517, 2545-2549, 2009
502009
Stacking faults as quantum wells in nanowires: Density of states, oscillator strength, and radiative efficiency
P Corfdir, C Hauswald, JK Zettler, T Flissikowski, J Lähnemann, ...
Physical Review B 90 (19), 195309, 2014
442014
Electron localization by a donor in the vicinity of a basal stacking fault in GaN
P Corfdir, P Lefebvre, J Ristić, JD Ganière, B Deveaud-Plédran
Physical Review B 80 (15), 153309, 2009
412009
Molecular beam epitaxy of GaN nanowires on epitaxial graphene
S Fernández-Garrido, M Ramsteiner, G Gao, LA Galves, B Sharma, ...
Nano letters 17 (9), 5213-5221, 2017
382017
Three-dimensional magneto-photoluminescence as a probe of the electronic properties of crystal-phase quantum disks in GaAs nanowires
P Corfdir, B Van Hattem, E Uccelli, S Conesa-Boj, P Lefebvre, ...
Nano letters 13 (11), 5303-5310, 2013
352013
Importance of excitonic effects and the question of internal electric fields in stacking faults and crystal phase quantum discs: The model-case of GaN
P Corfdir, P Lefebvre
Journal of Applied Physics 112 (5), 053512, 2012
342012
Exciton recombination dynamics in -plane (Al,Ga)N/GaN quantum wells probed by picosecond photo and cathodoluminescence
P Corfdir, P Lefebvre, L Balet, S Sonderegger, A Dussaigne, T Zhu, ...
Journal of Applied Physics 107 (4), 043524, 2010
342010
Origin of the nonradiative decay of bound excitons in GaN nanowires
C Hauswald, P Corfdir, JK Zettler, VM Kaganer, KK Sabelfeld, ...
Physical Review B 90 (16), 165304, 2014
332014
Intrinsic dynamics of weakly and strongly confined excitons in nonpolar nitride-based heterostructures
P Corfdir, J Levrat, A Dussaigne, P Lefebvre, H Teisseyre, I Grzegory, ...
Physical Review B 83 (24), 245326, 2011
312011
Sub-meV linewidth in GaN nanowire ensembles: Absence of surface excitons due to the field ionization of donors
P Corfdir, JK Zettler, C Hauswald, S Fernández-Garrido, O Brandt, ...
Physical Review B 90 (20), 205301, 2014
302014
Observation of dielectrically confined excitons in ultrathin GaN nanowires up to room temperature
JK Zettler, P Corfdir, C Hauswald, E Luna, U Jahn, T Flissikowski, ...
Nano letters 16 (2), 973-980, 2016
292016
p-Type doping of GaN nanowires characterized by photoelectrochemical measurements
J Kamimura, P Bogdanoff, M Ramsteiner, P Corfdir, F Feix, L Geelhaar, ...
Nano letters 17 (3), 1529-1537, 2017
282017
Exciton footprint of self-assembled AlGaAs quantum dots in core-shell nanowires
Y Fontana, P Corfdir, B Van Hattem, E Russo-Averchi, M Heiss, ...
Physical Review B 90, 075307, 2014
252014
Charge carrier generation, relaxation, and recombination in polytypic GaAs nanowires studied by photoluminescence excitation spectroscopy
P Corfdir, B Van Hattem, E Uccelli, A Fontcuberta i Morral, RT Phillips
Applied Physics Letters 103 (13), 133109, 2013
252013
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