フォロー
Atsushi Ogura
Atsushi Ogura
確認したメール アドレス: meiji.ac.jp
タイトル
引用先
引用先
Raman spectra of size-selected silicon clusters and comparison with calculated structures
EC Honea, A Ogura, CA Murray, K Raghavachari, WO Sprenger, ...
Nature 366 (6450), 42-44, 1993
4951993
Semiconductor device
A Ogura, K Egami
US Patent 4,643,950, 1987
2361987
UV-Raman spectroscopy system for local and global strain measurements in Si
A Ogura, K Yamasaki, D Kosemura, S Tanaka, I Chiba, R Shimidzu
Japanese journal of applied physics 45 (4S), 3007, 2006
1182006
Structures and coalescence behavior of size-selected silicon nanoclusters studied by surface-plasmon-polariton enhanced Raman spectroscopy
EC Honea, A Ogura, DR Peale, C Felix, CA Murray, K Raghavachari, ...
The Journal of chemical physics 110 (24), 12161-12172, 1999
1091999
Multi-layered MoS2 film formed by high-temperature sputtering for enhancement-mode nMOSFETs
T Ohashi, K Suda, S Ishihara, N Sawamoto, S Yamaguchi, K Matsuura, ...
Japanese Journal of Applied Physics 54 (4S), 04DN08, 2015
1022015
Sub-10-nm planar-bulk-CMOS devices using lateral junction control
H Wakabayashi, S Yamagami, N Ikezawa, A Ogura, M Narihiro, KI Arai, ...
IEEE International Electron Devices Meeting 2003, 20.7. 1-20.7. 3, 2003
1022003
Gas source silicon molecular beam epitaxy using silane
H Hirayama, T Tatsumi, A Ogura, N Aizaki
Applied physics letters 51 (26), 2213-2215, 1987
1011987
Silicon-on-insulator (SOI) substrate and method of fabricating the same
A Ogura
US Patent 6,211,041, 2001
812001
Method of producing a semiconductor on insulating substrate, and a method of forming a transistor thereon
R Koh, A Ogura
US Patent 5,427,976, 1995
771995
Improvement in ferroelectricity of HfxZr1− xO2 thin films using ZrO2 seed layer
T Onaya, T Nabatame, N Sawamoto, A Ohi, N Ikeda, T Chikyow, A Ogura
Applied Physics Express 10 (8), 081501, 2017
762017
Ferroelectricity of HfxZr1− xO2 thin films fabricated by 300 C low temperature process with plasma-enhanced atomic layer deposition
T Onaya, T Nabatame, N Sawamoto, A Ohi, N Ikeda, T Nagata, A Ogura
Microelectronic Engineering 215, 111013, 2019
732019
HfO2 growth by low-pressure chemical vapor deposition using the Hf (N (C2H5) 2) 4/O2 gas system
Y Ohshita, A Ogura, A Hoshino, S Hiiro, H Machida
Journal of crystal growth 233 (1-2), 292-297, 2001
702001
Semiconductor device having a conductive portion below an interlayer insulating film and method for producing the same
K Takeuchi, K Terashima, H Wakabayashi, S Yamagami, A Ogura, ...
US Patent 7,612,416, 2009
692009
Semiconductor substrate manufacturing method and semiconductor device manufacturing method, and semiconductor substrate and semiconductor device manufactured by the methods
A Ogura
US Patent 7,605,443, 2009
672009
Semiconductor device and method for manufacturing the same
R Koh, S Yamagami, J Lee, H Wakabayashi, Y Saito, A Ogura, M Narihiro, ...
US Patent App. 10/668,349, 2004
632004
Skeletal muscle loss is an independent negative prognostic factor in patients with advanced lower rectal cancer treated with neoadjuvant chemoradiotherapy
Y Takeda, T Akiyoshi, K Matsueda, H Fukuoka, A Ogura, H Miki, Y Hiyoshi, ...
PloS one 13 (4), e0195406, 2018
602018
Characterization of structures by micro-Raman imaging
S Nakashima, T Yamamoto, A Ogura, K Uejima, T Yamamoto
Applied physics letters 84 (14), 2533-2535, 2004
592004
Using tetrakis-diethylamido-hafnium for HfO2 thin-film growth in low-pressure chemical vapor deposition
Y Ohshita, A Ogura, A Hoshino, S Hiiro, T Suzuki, H Machida
Thin Solid Films 406 (1-2), 215-218, 2002
592002
Semiconductor device and manufacturing process therefor
K Terashima, K Takeuchi, S Yamagami, H Wakabayashi, A Ogura, ...
US Patent App. 10/576,412, 2007
582007
IEDM Tech
H Wakabayashi, S Yamagami, N Ikezawa, A Ogura, M Narihiro, K Arai, ...
Dig, 1999
581999
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論文 1–20