| GaInAsP alloy semiconductors TTP Pearsall (No Title), 1982 | 568* | 1982 |
| Waveguiding in planar photonic crystals M Lončar, D Nedeljković, T Doll, J Vučković, A Scherer, TP Pearsall Applied Physics Letters 77 (13), 1937-1939, 2000 | 530 | 2000 |
| Structurally induced optical transitions in Ge-Si superlattices TP Pearsall, J Bevk, LC Feldman, JM Bonar, JP Mannaerts, A Ourmazd Physical review letters 58 (7), 729, 1987 | 402 | 1987 |
| GexSi1− x strained‐layer superlattice waveguide photodetectors operating near 1.3 μm H Temkin, TP Pearsall, JC Bean, RA Logan, S Luryi Applied Physics Letters 48 (15), 963-965, 1986 | 300 | 1986 |
| The band structure dependence of impact ionization by hot carriers in semiconductors: GaAs TP Pearsall, F Capasso, RE Nahory, MA Pollack, JR Chelikowsky Solid-State Electronics 21 (1), 297-302, 1978 | 196 | 1978 |
| High T/sub c/superconductornoble-metal contacts with surface resistivities in the 10/sup-10/. cap omega. cm/sup 2/range JW Ekin, TM Larson, NF Bergren, AJ Nelson, AB Swartzlander, ... Appl. Phys. Lett.;(United States) 52 (21), 1988 | 166 | 1988 |
| Impact ionization rates for electrons and holes in Ga0. 47In0. 53As TP Pearsall Applied Physics Letters 36 (3), 218-220, 1980 | 166 | 1980 |
| An experimental determination of the effective masses for GaxIn1− xAsyP1− y alloys grown on InP RJ Nicholas, JC Portal, C Houlbert, P Perrier, TP Pearsall Applied Physics Letters 34 (8), 492-494, 1979 | 161 | 1979 |
| 1.5–1.6‐μm Ga0.47In0.53As/Al0.48In0.52As multiquantum well lasers grown by molecular beam epitaxy H Temkin, K Alavi, WR Wagner, TP Pearsall, AY Cho Applied physics letters 42 (10), 845-847, 1983 | 156 | 1983 |
| Single longitudinal‐mode optical phonon scattering in Ga0. 47In0. 53As TP Pearsall, R Carles, JC Portal Applied Physics Letters 42 (5), 436-438, 1983 | 146 | 1983 |
| Ga 0.47 In 0.53 As: A ternary semiconductor for photodetector applications T Pearsall IEEE Journal of Quantum Electronics 16 (7), 709-720, 1980 | 143 | 1980 |
| Experimental and theoretical confirmation of Bloch-mode light propagation in planar photonic crystal waveguides M Lončar, D Nedeljković, TP Pearsall, J Vučković, A Scherer, S Kuchinsky, ... Applied physics letters 80 (10), 1689-1691, 2002 | 142 | 2002 |
| Silicon-germanium alloys and heterostructures: optical and electronic properties TP Pearsall Critical Reviews in Solid State and Material Sciences 15 (6), 551-600, 1989 | 141 | 1989 |
| The Ga0. 47In0. 53As homojunction photodiode—A new avalanche photodetector in the near infrared between 1.0 and 1.6 μm TP Pearsall, M Papuchon Applied Physics Letters 33 (7), 640-642, 1978 | 140 | 1978 |
| Efficient lattice‐matched double‐heterostructure LED’s at 1.1 μm from GaxIn1− xAsyP1− y TP Pearsall, BI Miller, RJ Capik, KJ Bachmann Applied Physics Letters 28 (9), 499-501, 1976 | 135 | 1976 |
| Electroreflectance spectroscopy of Si-Ge x Si 1− x quantum-well structures TP Pearsall, FH Pollak, JC Bean, R Hull Physical Review B 33 (10), 6821, 1986 | 122 | 1986 |
| Avalanche gain in GexSi1-x/Si infrared waveguide detectors TP Pearsall, H Temkin, JC Bean, S Luryi IEEE electron device letters 7 (5), 330-332, 1986 | 122 | 1986 |
| Enhancement- and depletion-mode p-channel GexSi1-xmodulation-doped FET's TP Pearsall, JC Bean IEEE electron device letters 7 (5), 308-310, 1986 | 122 | 1986 |
| Electronic structure of Ge/Si monolayer strained-layer superlattices TP Pearsall, J Bevk, JC Bean, J Bonar, JP Mannaerts, A Ourmazd Physical Review B 39 (6), 3741, 1989 | 120 | 1989 |
| Structure and optical properties of strained Ge-Si superlattices grown on (001) Ge TP Pearsall, JM Vandenberg, R Hull, JM Bonar Physical review letters 63 (19), 2104, 1989 | 114 | 1989 |
Jelena VuckovicStanford University確認したメール アドレス: stanford.edu
