フォロー
Yulu Chen
Yulu Chen
Synopsys
確認したメール アドレス: purdue.edu
タイトル
引用先
引用先
Application of EUV resolution enhancement techniques (RET) to optimize and extend single exposure bi-directional patterning for 7nm and beyond logic designs
RH Kim, O Wood, M Crouse, Y Chen, V Plachecki, S Hsu, K Gronlund
Extreme Ultraviolet (EUV) Lithography VII 9776, 503-512, 2016
232016
Comparison of left and right side line edge roughness in lithography
L Sun, N Saulnier, G Beique, E Verduijn, W Wang, Y Xu, H Tang, Y Chen, ...
Metrology, Inspection, and Process Control for Microlithography XXX 9778 …, 2016
212016
Thin absorber extreme ultraviolet photomask based on Ni–TaN nanocomposite material
D Hay, P Bagge, I Khaw, L Sun, O Wood, Y Chen, R Kim, ZJ Qi, Z Shi
Optics Letters 41 (16), 3791-3794, 2016
192016
Line edge roughness frequency analysis for SAQP process
L Sun, X Zhang, S Levi, A Ge, H Zhou, W Wang, N Krishnan, Y Chen, ...
Optical Microlithography XXIX 9780, 247-252, 2016
172016
SAV using selective SAQP/SADP
W Wang, RRH Kim, L Sun, E Verduijn, Y Chen
US Patent 9,478,462, 2016
162016
Object motion with structured optical illumination as a basis for far-subwavelength resolution
KJ Webb, Y Chen, TA Smith
Physical Review Applied 6 (2), 024020, 2016
142016
Zero-mean circular Bessel statistics and Anderson localization
JA Newman, Y Chen, KJ Webb
Physical Review E 90 (2), 022119, 2014
132014
Design intent optimization at the beyond 7nm node: the intersection of DTCO and EUVL stochastic mitigation techniques
M Crouse, L Liebmann, V Plachecki, M Salama, Y Chen, N Saulnier, ...
Design-Process-Technology Co-optimization for Manufacturability XI 10148 …, 2017
122017
Printability and actinic AIMS review of programmed mask blank defects
E Verduijn, P Mangat, O Wood, J Rankin, Y Chen, F Goodwin, R Capelli, ...
Extreme Ultraviolet (EUV) Lithography VIII 10143, 112-124, 2017
122017
Enhanced and tunable resolution from an imperfect negative refractive index lens
Y Chen, YC Hsueh, M Man, KJ Webb
JOSA B 33 (3), 445-451, 2016
122016
Separating the optical contributions to line-edge roughness in EUV lithography using stochastic simulations
A Chunder, A Latypov, Y Chen, JJ Biafore, HJ Levinson, T Bailey
Advances in Patterning Materials and Processes XXXIV 10146, 72-80, 2017
112017
Circular Bessel statistics: derivation and application to wave propagation in random media
Y Chen, JA Newman, KJ Webb
JOSA A 31 (12), 2744-2752, 2014
112014
Method for producing self-aligned vias
RRH Kim, W Wang, L Sun, E Verduijn, Y Chen
US Patent 9,484,258, 2016
92016
Thin absorber EUV photomask based on mixed Ni and TaN material
D Hay, P Bagge, I Khaw, L Sun, O Wood, Y Chen, R Kim, ZJ Qi, Z Shi
Photomask Japan 2016: XXIII Symposium on Photomask and Next-Generation …, 2016
92016
Tip-to-tip variation mitigation in extreme ultraviolet lithography for 7 nm and beyond metallization layers and design rule analysis
Y Chen, L Sun, ZJ Qi, S Zhao, F Goodwin, I Matthew, V Plachecki
Journal of Vacuum Science & Technology B 35 (6), 2017
72017
Sidewall spacer pattern formation method
L Sun, X Zhang, R Xie, Y Chen
US Patent 9,911,604, 2018
62018
Measurement of through-focus EUV pattern shifts using the SHARP actinic microscope
O Wood II, Y Chen, P Mangat, K Goldberg, M Benk, B Kasprowicz, ...
International Conference on Extreme Ultraviolet Lithography 2017 10450, 38-43, 2017
52017
Investigation of machine learning for dual OPC and assist feature printing optimization
M Guajardo, Y Chen, P Brooker, CE Wu, K Hooker, F Latinwo, K Lucas
Design-Process-Technology Co-optimization for Manufacturability XIII 10962 …, 2019
42019
Directed self-assembly aware restricted design rule and its impact on design ability
Y Chen, R Kim
Design-Process-Technology Co-optimization for Manufacturability X 9781, 24-31, 2016
42016
Holistic analysis of aberration induced overlay error in EUV lithography
Y Chen, L Liebmann, L Sun, A Gabor, S Zhao, F Luo, O Wood II, X Chen, ...
Extreme Ultraviolet (EUV) Lithography IX 10583, 94-104, 2018
32018
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