フォロー
Thomas Mikolajick
Thomas Mikolajick
Scientific Director, NaMLab GmbH and Professor for Nanoelectronics, TU Dresden
確認したメール アドレス: namlab.com - ホームページ
タイトル
引用先
引用先
Ferroelectricity in Simple Binary ZrO2 and HfO2
J Muller, TS Boscke, U Schroder, S Mueller, D Brauhaus, U Bottger, ...
Nano letters 12 (8), 4318-4323, 2012
15062012
Ferroelectricity and Antiferroelectricity of Doped Thin HfO2‐Based Films
MH Park, YH Lee, HJ Kim, YJ Kim, T Moon, KD Kim, J Mueller, A Kersch, ...
Advanced Materials 27 (11), 1811-1831, 2015
9622015
Incipient ferroelectricity in Al‐doped HfO2 thin films
S Mueller, J Mueller, A Singh, S Riedel, J Sundqvist, U Schroeder, ...
Advanced Functional Materials 22 (11), 2412-2417, 2012
7582012
Physical Mechanisms behind the Field‐Cycling Behavior of HfO2‐Based Ferroelectric Capacitors
M Pešić, FPG Fengler, L Larcher, A Padovani, T Schenk, ED Grimley, ...
Advanced Functional Materials 26 (25), 4601-4612, 2016
6692016
Ferroelectricity in yttrium-doped hafnium oxide
J Müller, U Schröder, TS Böscke, I Müller, U Böttger, L Wilde, J Sundqvist, ...
Journal of Applied Physics 110 (11), 2011
6212011
Ferroelectric Zr0. 5Hf0. 5O2 thin films for nonvolatile memory applications
J Müller, TS Böscke, D Bräuhaus, U Schröder, U Böttger, J Sundqvist, ...
Applied Physics Letters 99 (11), 2011
5442011
Stabilizing the ferroelectric phase in doped hafnium oxide
M Hoffmann, U Schroeder, T Schenk, T Shimizu, H Funakubo, O Sakata, ...
Journal of Applied Physics 118 (7), 2015
5012015
Ferroelectric hafnium oxide based materials and devices: Assessment of current status and future prospects
J Müller, P Polakowski, S Mueller, T Mikolajick
ECS Journal of Solid State Science and Technology 4 (5), N30-N35, 2015
4672015
Reconfigurable silicon nanowire transistors
A Heinzig, S Slesazeck, F Kreupl, T Mikolajick, WM Weber
Nano letters 12 (1), 119-124, 2012
4442012
A FeFET based super-low-power ultra-fast embedded NVM technology for 22nm FDSOI and beyond
S Dünkel, M Trentzsch, R Richter, P Moll, C Fuchs, O Gehring, M Majer, ...
2017 IEEE International Electron Devices Meeting (IEDM), 19.7. 1-19.7. 4, 2017
4432017
Ferroelectric hafnium oxide: A CMOS-compatible and highly scalable approach to future ferroelectric memories
J Muller, TS Boscke, S Muller, E Yurchuk, P Polakowski, J Paul, D Martin, ...
Electron Devices Meeting (IEDM), 2013 IEEE International, 10.8. 1-10.8. 4, 2013
4382013
Review and perspective on ferroelectric HfO2-based thin films for memory applications
MH Park, YH Lee, T Mikolajick, U Schroeder, CS Hwang
Mrs Communications 8 (3), 795-808, 2018
4082018
Impact of different dopants on the switching properties of ferroelectric hafniumoxide
U Schroeder, E Yurchuk, J Müller, D Martin, T Schenk, P Polakowski, ...
Japanese Journal of Applied Physics 53 (8S1), 08LE02, 2014
3662014
A 28nm HKMG super low power embedded NVM technology based on ferroelectric FETs
M Trentzsch, S Flachowsky, R Richter, J Paul, B Reimer, D Utess, ...
2016 IEEE International Electron Devices Meeting (IEDM), 11.5. 1-11.5. 4, 2016
3532016
Unveiling the double-well energy landscape in a ferroelectric layer
M Hoffmann, FPG Fengler, M Herzig, T Mittmann, B Max, U Schroeder, ...
Nature 565 (7740), 464-467, 2019
3482019
Phase transitions in ferroelectric silicon doped hafnium oxide
TS Böscke, S Teichert, D Bräuhaus, J Müller, U Schröder, U Böttger, ...
Applied Physics Letters 99 (11), 2011
3482011
Structural Changes Underlying Field‐Cycling Phenomena in Ferroelectric HfO2 Thin Films
ED Grimley, T Schenk, X Sang, M Pešić, U Schroeder, T Mikolajick, ...
Advanced Electronic Materials 2 (9), 1600173, 2016
3412016
Surface and grain boundary energy as the key enabler of ferroelectricity in nanoscale hafnia-zirconia: A comparison of model and experiment
MH Park, YH Lee, HJ Kim, T Schenk, W Lee, K Do Kim, FPG Fengler, ...
Nanoscale 9 (28), 9973-9986, 2017
2902017
Switching kinetics in nanoscale hafnium oxide based ferroelectric field-effect transistors
H Mulaosmanovic, J Ocker, S Müller, U Schroeder, J Müller, ...
ACS applied materials & interfaces 9 (4), 3792-3798, 2017
2882017
Ferroelectricity in HfO2 enables nonvolatile data storage in 28 nm HKMG
J Müller, E Yurchuk, T Schlösser, J Paul, R Hoffmann, S Müller, D Martin, ...
2012 symposium on VLSI technology (VLSIT), 25-26, 2012
2852012
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論文 1–20