| Improved channel mobility in 4H-SiC MOSFETs by boron passivation D Okamoto, M Sometani, S Harada, R Kosugi, Y Yonezawa, H Yano IEEE Electron Device Letters 35 (12), 1176-1178, 2014 | 116 | 2014 |
| Characterization of traps at nitrided SiO2/SiC interfaces near the conduction band edge by using Hall effect measurements T Hatakeyama, Y Kiuchi, M Sometani, S Harada, D Okamoto, H Yano, ... Applied Physics Express 10 (4), 046601, 2017 | 115 | 2017 |
| Temperature-dependent analysis of conduction mechanism of leakage current in thermally grown oxide on 4H-SiC M Sometani, D Okamoto, S Harada, H Ishimori, S Takasu, T Hatakeyama, ... Journal of Applied Physics 117 (2), 2015 | 62 | 2015 |
| Low Vf and highly reliable 16 kV ultrahigh voltage SiC flip-type n-channel implantation and epitaxial IGBT Y Yonezawa, T Mizushima, K Takenaka, H Fujisawa, T Kato, S Harada, ... 2013 IEEE International Electron Devices Meeting, 6.6. 1-6.6. 4, 2013 | 62 | 2013 |
| Interface carbon defects at 4H-SiC (0001)/SiO2 interfaces studied by electron-spin-resonance spectroscopy T Umeda, GW Kim, T Okuda, M Sometani, T Kimoto, S Harada Applied Physics Letters 113 (6), 2018 | 49 | 2018 |
| Ultrahigh-temperature rapid thermal oxidation of 4H-SiC (0001) surfaces and oxidation temperature dependence of SiO2/SiC interface properties T Hosoi, D Nagai, M Sometani, Y Katsu, H Takeda, T Shimura, M Takei, ... Applied Physics Letters 109 (18), 2016 | 47 | 2016 |
| Characterization of near-interface traps at 4H-SiC metal–oxide–semiconductor interfaces using modified distributed circuit model X Zhang, D Okamoto, T Hatakeyama, M Sometani, S Harada, R Kosugi, ... Applied Physics Express 10 (6), 064101, 2017 | 31 | 2017 |
| Threshold-voltage instability in 4H-SiC MOSFETs with nitrided gate oxide revealed by non-relaxation method M Sometani, D Okamoto, S Harada, H Ishimori, S Takasu, T Hatakeyama, ... Japanese Journal of Applied Physics 55 (4S), 04ER11, 2016 | 29 | 2016 |
| Carbon dangling-bond center (carbon Pb center) at 4H-SiC (0001)/SiO2 interface T Umeda, T Kobayashi, M Sometani, H Yano, Y Matsushita, S Harada Applied physics letters 116 (7), 2020 | 26 | 2020 |
| Ideal phonon-scattering-limited mobility in inversion channels of 4H-SiC (0001) MOSFETs with ultralow net doping concentrations M Sometani, T Hosoi, H Hirai, T Hatakeyama, S Harada, H Yano, ... Applied Physics Letters 115 (13), 2019 | 26 | 2019 |
| Self-aligned formation of the trench bottom shielding region in 4H-SiC trench gate MOSFET T Kojima, S Harada, Y Kobayashi, M Sometani, K Ariyoshi, J Senzaki, ... Japanese Journal of Applied Physics 55 (4S), 04ER02, 2016 | 24 | 2016 |
| Impact of crystal faces of 4H-SiC in SiO2/4H-SiC structures on interface trap densities and mobilities T Hatakeyama, T Masuda, M Sometani, S Harada, D Okamoto, H Yano, ... Applied Physics Express 12 (2), 021003, 2019 | 23 | 2019 |
| Device performance and switching characteristics of 16 kV ultrahigh-voltage SiC flip-type n-channel IE-IGBTs Y Yonezawa, T Mizushima, K Takenaka, H Fujisawa, T Deguchi, T Kato, ... Materials Science Forum 821, 842-846, 2015 | 23 | 2015 |
| Energy distribution of Al2O3/diamond interface states characterized by high temperature capacitance-voltage method X Zhang, T Matsumoto, U Sakurai, T Makino, M Ogura, S Yamasaki, ... Carbon 168, 659-664, 2020 | 22 | 2020 |
| Electron-spin-resonance and electrically detected-magnetic-resonance characterization on PbC center in various 4H-SiC (0001)/SiO2 interfaces T Umeda, Y Nakano, E Higa, T Okuda, T Kimoto, T Hosoi, H Watanabe, ... Journal of Applied Physics 127 (14), 2020 | 22 | 2020 |
| Passive–active oxidation boundary for thermal oxidation of 4H-SiC (0001) surface in O2/Ar gas mixture and its impact on SiO2/SiC interface quality T Hosoi, Y Katsu, K Moges, D Nagai, M Sometani, H Tsuji, T Shimura, ... Applied Physics Express 11 (9), 091301, 2018 | 21 | 2018 |
| Dynamic characteristics of large current capacity module using 16-kV ultrahigh voltage SiC flip-type n-channel IE-IGBT T Mizushima, K Takenaka, H Fujisawa, T Kato, S Harada, Y Tanaka, ... 2014 IEEE 26th International Symposium on Power Semiconductor Devices & IC's …, 2014 | 20 | 2014 |
| Sub-nanometer-scale depth profiling of nitrogen atoms in SiO2/4H-SiC structures treated with NO annealing K Moges, M Sometani, T Hosoi, T Shimura, S Harada, H Watanabe Applied Physics Express 11 (10), 101303, 2018 | 19 | 2018 |
| Insight into enhanced field-effect mobility of 4H-SiC MOSFET with Ba incorporation studied by Hall effect measurements E Fujita, M Sometani, T Hatakeyama, S Harada, H Yano, T Hosoi, ... AIP Advances 8 (8), 2018 | 17 | 2018 |
| Characterization of traps in SiC/SiO2 interfaces close to the conduction band by deep-level transient spectroscopy T Hatakeyama, M Sometani, K Fukuda, H Okumura, T Kimoto Japanese Journal of Applied Physics 54 (11), 111301, 2015 | 17 | 2015 |
