Shengkai Wang
タイトル
引用先
引用先
Desorption kinetics of GeO from structure
SK Wang, K Kita, CH Lee, T Tabata, T Nishimura, K Nagashio, A Toriumi
Journal of applied physics 108 (5), 054104, 2010
1632010
Ge MOSFETs performance: Impact of Ge interface passivation
CH Lee, T Nishimura, T Tabata, SK Wang, K Nagashio, K Kita, A Toriumi
2010 International Electron Devices Meeting, 18.1. 1-18.1. 4, 2010
1062010
High-Electron-Mobility Ge n-Channel Metal--Oxide--Semiconductor Field-Effect Transistors with High-Pressure Oxidized Y2O3
T Nishimura, CH Lee, T Tabata, SK Wang, K Nagashio, K Kita, A Toriumi
Applied physics express 4 (6), 4201, 2011
862011
Isotope tracing study of GeO desorption mechanism from GeO2/Ge stack using 73Ge and 18O
SK Wang, K Kita, T Nishimura, K Nagashio, A Toriumi
Japanese Journal of Applied Physics 50 (4), 04DA01, 2011
582011
Material potential and scalability challenges of germanium CMOS
A Toriumi, CH Lee, SK Wang, T Tabata, M Yoshida, DD Zhao, ...
2011 International Electron Devices Meeting, 28.4. 1-28.4. 4, 2011
502011
Kinetic study of GeO disproportionation into a GeO2/Ge system using x-ray photoelectron spectroscopy
S Kai Wang, HG Liu, A Toriumi
Applied Physics Letters 101 (6), 061907, 2012
412012
Comprehensive study of GeO2 oxidation, GeO desorption and GeO2-metal interaction -understanding of Ge processing kinetics for perfect interface control-
K Kita, SK Wang, M Yoshida, CH Lee, K Nagashio, T Nishimura, ...
2009 IEEE International Electron Devices Meeting (IEDM), 1-4, 2009
312009
Kinetic Effects of O-Vacancy Generated by GeO2/Ge Interfacial Reaction
SK Wang, K Kita, T Nishimura, K Nagashio, A Toriumi
Japanese Journal of Applied Physics 50 (10), 2011
222011
Interfacial dipole at high-k dielectric/SiO2 interface: X-ray photoelectron spectroscopy characteristics
LQ Zhu, K Kita, T Nishimura, K Nagashio, SK Wang, A Toriumi
Japanese Journal of Applied Physics 50 (3R), 031502, 2011
222011
Observation of Dipole Layer Formed at High-k Dielectrics/SiO2 Interface with X-ray Photoelectron Spectroscopy
LQ Zhu, K Kita, T Nishimura, K Nagashio, SK Wang, A Toriumi
Applied Physics Express, Volume 3, Issue 6, pp. 061501-061501-3 (2010). 3 (6 …, 2010
222010
Enhanced performance of GaN-based light-emitting diodes by using Al mirror and atomic layer deposition-TiO2/Al2O3 distributed Bragg reflector backside reflector with patterned …
H Chen, H Guo, P Zhang, X Zhang, H Liu, S Wang, Y Cui
Applied Physics Express 6 (2), 022101, 2013
192013
Oxidation, Diffusion and Desorption in a Ge/GeO2 System
A Toriumi, S Wang, CH Lee, M Yoshida, K Kita, T Nishimura, K Nagashio
ECS Transactions 28 (2), 171, 2010
192010
(Invited) Oxidation, Diffusion and Desorption in a Ge/GeO2 System
A Toriumi, S Wang, CH Lee, M Yoshida, K Kita, T Nishimura, K Nagashio
ECS Transactions 28 (2), 171-180, 2010
192010
The Impact of HCl Precleaning and Sulfur Passivation on the Al2O3/Ge Interface in Ge Metal-Oxide-Semiconductor Capacitors
X Bai-Qing, C Hu-Dong, S Bing, W Sheng-Kai, L Hong-Gang
Chinese Physics Letters 29 (4), 046801, 2012
182012
Effect of the Si-doped In0. 49Ga0. 51P barrier layer on the device performance of In0. 4Ga0. 6As MOSFETs grown on semi-insulating GaAs substrates
C Hu-Dong, S Bing, X Bai-Qing, L Gui-Ming, Z Wei, W Sheng-Kai, ...
Chinese Physics B 22 (7), 077306, 2013
162013
Recent progress of germanium MOSFETs
A Toriumi
2012 IEEE International Meeting for Future of Electron Devices, Kansai, 1-2, 2012
162012
Reducing the interface trap density in Al2O3/InP stacks by low-temperature thermal process
SK Wang, M Cao, B Sun, H Li, H Liu
Applied Physics Express 8 (9), 091201, 2015
142015
Recent progress of Ge technology for a post-Si CMOS
A Toriumi, C Lee, T Nishimura, S Wang, K Kita, K Nagashio
ECS transactions 35 (3), 443, 2011
142011
Room temperature wafer bonding by surface activated ald-al2o3
Y Li, S Wang, B Sun, H Chang, W Zhao, X Zhang, H Liu
ECS Transactions 50 (7), 303, 2013
122013
Electron mobility in high-k Ge-MISFETs goes up to higher
T Nishimura, CH Lee, SK Wang, T Tabata, K Kita, K Nagashio, A Toriumi
2010 Symposium on VLSI Technology, 209-210, 2010
122010
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