フォロー
Shigehiko Sasa
Shigehiko Sasa
Osaka Institute of Technology
確認したメール アドレス: oit.ac.jp - ホームページ
タイトル
引用先
引用先
Breakdown of the quantum Hall effect due to electron heating
S Komiyama, T Takamasu, S Hiyamizu, S Sasa
Solid state communications 54 (6), 479-484, 1985
2261985
Molecular beam epitaxial growth of wide bandgap ZnMgO alloy films on (1 1 1)-oriented Si substrate toward UV-detector applications
K Koike, K Hama, I Nakashima, G Takada, K Ogata, S Sasa, M Inoue, ...
Journal of crystal growth 278 (1-4), 288-292, 2005
2132005
Violation of the integral quantum Hall effect: influence of backscattering and the role of voltage contacts
S Komiyama, H Hirai, S Sasa, S Hiyamizu
Physical Review B 40 (18), 12566, 1989
1891989
Inter-edge-state scattering and nonlinear effects in a two-dimensional electron gas at high magnetic fields
S Komiyama, H Hirai, M Ohsawa, Y Matsuda, S Sasa, T Fujii
Physical Review B 45 (19), 11085, 1992
1581992
High-performance ZnO∕ ZnMgO field-effect transistors using a hetero-metal-insulator-semiconductor structure
S Sasa, M Ozaki, K Koike, M Yano, M Inoue
Applied Physics Letters 89 (5), 2006
1522006
A pseudomorphic In0. 53Ga0. 47As/AlAs resonant tunneling barrier with a peak-to-valley current ratio of 14 at room temperature
T Inata, S Muto, Y Nakata, S Sasa, T Fujii, S Hiyamizu
Japanese journal of applied physics 26 (8A), L1332, 1987
1381987
ZnO and ZnMgO growth on a-plane sapphire by molecular beam epitaxy
K Ogata, K Koike, T Tanite, T Komuro, F Yan, S Sasa, M Inoue, M Yano
Journal of Crystal Growth 251 (1-4), 623-627, 2003
1362003
Characteristics of a Zn0. 7Mg0. 3O∕ ZnO heterostructure field-effect transistor grown on sapphire substrate by molecular-beam epitaxy
K Koike, I Nakashima, K Hashimoto, S Sasa, M Inoue, M Yano
Applied Physics Letters 87 (11), 2005
1182005
Electrical properties of Si-doped AlxGa1-xAs layers grown by MBE
T Ishikawa, J Saito, S Sasa, S Hiyamizu
Japanese Journal of Applied Physics 21 (11A), L675, 1982
1111982
Piezoelectric carrier confinement by lattice mismatch at ZnO/Zn0. 6Mg0. 4O heterointerface
K Koike, K Hama, I Nakashima, G Takada, M Ozaki, K Ogata, S Sasa, ...
Japanese journal of applied physics 43 (10B), L1372, 2004
932004
High-reliability InGaP/GaAs HBTs fabricated by self-aligned process
T Takahashi, S Sasa, A Kawano, T Iwai, T Fujii
Proceedings of 1994 IEEE International Electron Devices Meeting, 191-194, 1994
931994
Implant isolation of ZnO
SO Kucheyev, C Jagadish, JS Williams, PNK Deenapanray, M Yano, ...
Journal of applied physics 93 (5), 2972-2976, 2003
842003
Room-temperature operation of a memory-effect AlGaAs/GaAs heterojunction field-effect transistor with self-assembled InAs nanodots
K Koike, K Saitoh, S Li, S Sasa, M Inoue, M Yano
Applied Physics Letters 76 (11), 1464-1466, 2000
832000
Polarization-induced two-dimensional electron gas at Zn1− xMgxO/ZnO heterointerface
M Yano, K Hashimoto, K Fujimoto, K Koike, S Sasa, M Inoue, Y Uetsuji, ...
Journal of crystal growth 301, 353-357, 2007
822007
Electrical isolation of ZnO by ion bombardment
SO Kucheyev, PNK Deenapanray, C Jagadish, JS Williams, M Yano, ...
Applied Physics Letters 81 (18), 3350-3352, 2002
782002
Chemical states of nitrogen in ZnO studied by near-edge X-ray absorption fine structure and core-level photoemission spectroscopies
M Petravic, PNK Deenapanray, VA Coleman, C Jagadish, KJ Kim, B Kim, ...
Surface science 600 (7), L81-L85, 2006
652006
Si atomic-planar-doping in GaAs made by molecular beam epitaxy
S Sasa, S Muto, K Kondo, H Ishikawa, S Hiyamizu
Japanese journal of applied physics 24 (8A), L602, 1985
641985
Mechanisms of electrical isolation in -irradiated ZnO
A Zubiaga, F Tuomisto, VA Coleman, HH Tan, C Jagadish, K Koike, ...
Physical Review B—Condensed Matter and Materials Physics 78 (3), 035125, 2008
632008
Temperature dependence of electron mobility in InGaAs/InAlAs heterostructures
T Matsuoka, E Kobayashi, K Taniguchi, C Hamaguchi, S Sasa
Japanese journal of applied physics 29 (10R), 2017, 1990
631990
Improved 2DEG mobility in inverted GaAs/n-AlGaAs heterostructures grown by MBE
S Sasa, J Saito, K Nanbu, T Ishikawa, S Hiyamizu
Japanese journal of applied physics 23 (8A), L573, 1984
621984
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論文 1–20