Kevin J. Chen
Cited by
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Fully integrated wearable sensor arrays for multiplexed in situ perspiration analysis
W Gao, S Emaminejad, HYY Nyein, S Challa, K Chen, A Peck, HM Fahad, ...
Nature 529 (7587), 509-514, 2016
GaN-on-Si power technology: Devices and applications
KJ Chen, O Häberlen, A Lidow, C lin Tsai, T Ueda, Y Uemoto, Y Wu
IEEE Transactions on Electron Devices 64 (3), 779-795, 2017
The 2018 GaN power electronics roadmap
H Amano, Y Baines, E Beam, M Borga, T Bouchet, PR Chalker, M Charles, ...
Journal of Physics D: Applied Physics 51 (16), 163001, 2018
High-performance enhancement-mode AlGaN/GaN HEMTs using fluoride-based plasma treatment
Y Cai, Y Zhou, KJ Chen, KM Lau
IEEE Electron Device Letters 26 (7), 435-437, 2005
Control of threshold voltage of AlGaN/GaN HEMTs by fluoride-based plasma treatment: From depletion mode to enhancement mode
Y Cai, Y Zhou, KM Lau, KJ Chen
IEEE transactions on electron devices 53 (9), 2207-2215, 2006
Effective passivation of AlGaN/GaN HEMTs by ALD-grown AlN thin film
S Huang, Q Jiang, S Yang, C Zhou, KJ Chen
IEEE Electron Device Letters 33 (4), 516-518, 2012
600-V Normally Off /AlGaN/GaN MIS-HEMT With Large Gate Swing and Low Current Collapse
Z Tang, Q Jiang, Y Lu, S Huang, S Yang, X Tang, KJ Chen
IEEE Electron Device Letters 34 (11), 1373-1375, 2013
Maximizing the performance of 650-V p-GaN gate HEMTs: Dynamic RON characterization and circuit design considerations
H Wang, J Wei, R Xie, C Liu, G Tang, KJ Chen
IEEE Transactions on Power Electronics 32 (7), 5539-5549, 2016
A stub tapped branch-line coupler for dual-band operations
H Zhang, KJ Chen
IEEE Microwave and Wireless components letters 17 (2), 106-108, 2007
Threshold voltage instability in Al2O3/GaN/AlGaN/GaN metal–insulator–semiconductor high-electron mobility transistors
S Huang, S Yang, J Roberts, KJ Chen
Japanese journal of applied physics 50 (11R), 110202, 2011
Interface Engineering of Monolayer MoS2/GaN Hybrid Heterostructure: Modified Band Alignment for Photocatalytic Water Splitting Application by Nitridation …
Z Zhang, Q Qian, B Li, KJ Chen
ACS applied materials & interfaces 10 (20), 17419-17426, 2018
Vertical leakage/breakdown mechanisms in AlGaN/GaN-on-Si devices
C Zhou, Q Jiang, S Huang, KJ Chen
IEEE Electron Device Letters 33 (8), 1132-1134, 2012
High-Performance Normally-OffMOSFET Using a Wet Etching-Based Gate Recess Technique
Y Wang, M Wang, B Xie, CP Wen, J Wang, Y Hao, W Wu, KJ Chen, ...
IEEE Electron Device Letters 34 (11), 1370-1372, 2013
Enhancement‐mode AlGaN/GaN HEMT and MIS‐HEMT technology
KJ Chen, C Zhou
Physica status solidi (a) 208 (2), 434-438, 2011
High-performance AlGaN∕ GaN lateral field-effect rectifiers compatible with high electron mobility transistors
W Chen, KY Wong, W Huang, KJ Chen
Applied physics letters 92 (25), 2008
High-Quality Interface in MIS Structures With In Situ Pre-Gate Plasma Nitridation
S Yang, Z Tang, KY Wong, YS Lin, C Liu, Y Lu, S Huang, KJ Chen
IEEE Electron Device Letters 34 (12), 1497-1499, 2013
Enhancement-mode III-N devices, circuits, and methods
YC Jing Chen
US Patent 7,932,539, 2011
Single-chip boost converter using monolithically integrated AlGaN/GaN lateral field-effect rectifier and normally off HEMT
W Chen, KY Wong, KJ Chen
IEEE electron device letters 30 (5), 430-432, 2009
InP-based high-performance monostable-bistable transition logic elements (MOBILEs) using integrated multiple-input resonant-tunneling devices
KJ Chen, K Maezawa, M Yamamoto
IEEE Electron Device Letters 17 (3), 127-129, 1996
High-performance InP-based enhancement-mode HEMTs using non-alloyed ohmic contacts and Pt-based buried-gate technologies
KJ Chen, T Enoki, K Maezawa, K Arai, M Yamamoto
IEEE transactions on electron devices 43 (2), 252-257, 1996
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