| XPS study of the L-CVD deposited SnO2 thin films exposed to oxygen and hydrogen J Szuber, G Czempik, R Larciprete, D Koziej, B Adamowicz Thin Solid Films 391 (2), 198-203, 2001 | 260 | 2001 |
| Effects of interface states and temperature on the CV behavior of metal/insulator/AlGaN/GaN heterostructure capacitors M Miczek, C Mizue, T Hashizume, B Adamowicz Journal of Applied Physics 103 (10), 2008 | 224 | 2008 |
| Surface passivation of III–V semiconductors for future CMOS devices—Past research, present status and key issues for future H Hasegawa, M Akazawa, A Domanowska, B Adamowicz Applied surface science 256 (19), 5698-5707, 2010 | 79 | 2010 |
| The comparative XPS and PYS studies of SnO2 thin films prepared by L-CVD technique and exposed to oxygen and hydrogen J Szuber, G Czempik, R Larciprete, B Adamowicz Sensors and Actuators B: Chemical 70 (1-3), 177-181, 2000 | 73 | 2000 |
| On the origin of interface states at oxide/III-nitride heterojunction interfaces M Matys, B Adamowicz, A Domanowska, A Michalewicz, R Stoklas, ... Journal of Applied Physics 120 (22), 2016 | 46 | 2016 |
| Computer analysis of surface recombination process at Si and compound semiconductor surfaces and behavior of surface recombination velocity B Adamowicz, H Hasegawa Japanese journal of applied physics 37 (3S), 1631, 1998 | 45 | 1998 |
| Response to oxygen and chemical properties of SnO2 thin-film gas sensors B Adamowicz, W Izydorczyk, J Izydorczyk, A Klimasek, W Jakubik, ... Vacuum 82 (10), 966-970, 2008 | 40 | 2008 |
| Simulations of Capacitance–Voltage–Temperature Behavior of Metal/Insulator/AlGaN and Metal/Insulator/AlGaN/GaN Structures M Miczek, B Adamowicz, C Mizue, T Hashizume Japanese Journal of Applied Physics 48 (4S), 04C092, 2009 | 35 | 2009 |
| Mechanism of yellow luminescence in GaN at room temperature M Matys, B Adamowicz Journal of Applied Physics 121 (6), 2017 | 29 | 2017 |
| Determination of the deep donor-like interface state density distribution in metal/Al2O3/n-GaN structures from the photocapacitance–light intensity measurement M Matys, B Adamowicz, T Hashizume Applied Physics Letters 101 (23), 2012 | 27 | 2012 |
| Dynamics and control of recombination process at semiconductor surfaces, interfaces and nano-structures H Hasegawa, T Sato, S Kasai, B Adamowicz, T Hashizume Solar Energy 80 (6), 629-644, 2006 | 25 | 2006 |
| Near-band gap transitions in the surface photovoltage spectra for GaAs, GaP and Si surfaces B Adamowicz, J Szuber Surface science 247 (2-3), 94-99, 1991 | 24 | 1991 |
| Origin of positive fixed charge at insulator/AlGaN interfaces and its control by AlGaN composition M Matys, R Stoklas, M Blaho, B Adamowicz Applied physics letters 110 (24), 2017 | 23 | 2017 |
| Surface electronic properties of sulfur-treated GaAs determined by surface photovoltage measurement and its computer simulation P Tomkiewicz, S Arabasz, B Adamowicz, M Miczek, J Mizsei, DRT Zahn, ... Surface science 603 (3), 498-502, 2009 | 23 | 2009 |
| Characterization of capture cross sections of interface states in dielectric/III-nitride heterojunction structures M Matys, R Stoklas, J Kuzmik, B Adamowicz, Z Yatabe, T Hashizume Journal of Applied Physics 119 (20), 2016 | 20 | 2016 |
| Disorder induced gap states as a cause of threshold voltage instabilities in Al2O3/AlGaN/GaN metal-oxide-semiconductor high-electron-mobility transistors M Matys, S Kaneki, K Nishiguchi, B Adamowicz, T Hashizume Journal of Applied Physics 122 (22), 2017 | 18 | 2017 |
| Computer analysis of an influence of oxygen vacancies on the electronic properties of the SnO2 surface and near‐surface region W Izydorczyk, B Adamowicz, M Miczek, K Waczynski physica status solidi (a) 203 (9), 2241-2246, 2006 | 18 | 2006 |
| Direct measurement of donor-like interface state density and energy distribution at insulator/AlGaN interface in metal/Al2O3/AlGaN/GaN by photocapacitance method M Matys, B Adamowicz, Y Hori, T Hashizume Applied Physics Letters 103 (2), 2013 | 17 | 2013 |
| XPS, electric and photoluminescence-based analysis of the GaAs (1 0 0) nitridation Z Benamara, N Mecirdi, BB Bouiadjra, L Bideux, B Gruzza, C Robert, ... Applied surface science 252 (22), 7890-7894, 2006 | 16 | 2006 |
| Surface photovoltage and Auger electron spectromicroscopy studies of HfO2/SiO2/4H-SiC and HfO2/Al2O3/4H-SiC structures A Domanowska, M Miczek, R Ucka, M Matys, B Adamowicz, J Żywicki, ... Applied surface science 258 (21), 8354-8359, 2012 | 15 | 2012 |
