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Stephanie RENNESSON
Stephanie RENNESSON
EasyGaN
Verified email at easy-gan.com
Title
Cited by
Cited by
Year
Polarity in GaN and ZnO: Theory, measurement, growth, and devices
J Zuniga-Perez, V Consonni, L Lymperakis, X Kong, A Trampert, ...
Applied Physics Reviews 3 (4), 041303, 2016
1092016
Analysis of the AlGaN/GaN vertical bulk current on Si, sapphire, and free-standing GaN substrates
A Pérez-Tomás, A Fontserè, J Llobet, M Placidi, S Rennesson, N Baron, ...
Journal of Applied Physics 113 (17), 174501, 2013
712013
Power performance at 40 GHz of AlGaN/GaN high-electron mobility transistors grown by molecular beam epitaxy on Si (111) substrate
P Altuntas, F Lecourt, A Cutivet, N Defrance, E Okada, M Lesecq, ...
IEEE Electron Device Letters 36 (4), 303-305, 2015
552015
Universal description of III-V/Si epitaxial growth processes
I Lucci, S Charbonnier, L Pedesseau, M Vallet, L Cerutti, JB Rodriguez, ...
Physical Review Materials 2 (6), 060401, 2018
482018
III-Nitride-on-silicon microdisk lasers from the blue to the deep ultra-violet
J Selles, V Crepel, I Roland, M El Kurdi, X Checoury, P Boucaud, M Mexis, ...
Applied Physics Letters 109 (23), 231101, 2016
352016
Blue microlasers integrated on a photonic platform on silicon
F Tabataba-Vakili, L Doyennette, C Brimont, T Guillet, S Rennesson, ...
ACS photonics 5 (9), 3643-3648, 2018
282018
Optimization of High Electron Mobility Heterostructures for High-Power/Frequency Performances
S Rennesson, F Lecourt, N Defrance, M Chmielowska, S Chenot, ...
IEEE transactions on electron devices 60 (10), 3105-3111, 2013
252013
Complex optical index of single wall carbon nanotube films from the near-infrared to the terahertz spectral range
S Maine, C Koechlin, S Rennesson, J Jaeck, S Salort, B Chassagne, ...
Applied optics 51 (15), 3031-3035, 2012
242012
Efficient second harmonic generation in low-loss planar GaN waveguides
M Gromovyi, J Brault, A Courville, S Rennesson, F Semond, G Feuillet, ...
Optics express 25 (19), 23035-23044, 2017
182017
Proposition of a model elucidating the AlN-on-Si (111) microstructure
N Mante, S Rennesson, E Frayssinet, L Largeau, F Semond, JL Rouvière, ...
Journal of Applied Physics 123 (21), 215701, 2018
172018
III-nitride on silicon electrically injected microrings for nanophotonic circuits
F Tabataba-Vakili, S Rennesson, B Damilano, E Frayssinet, JY Duboz, ...
Optics Express 27 (8), 11800-11808, 2019
152019
Short-wave infrared (λ = 3 μm) intersubband polaritons in the GaN/AlN system
T Laurent, JM Manceau, E Monroy, CB Lim, S Rennesson, F Semond, ...
Applied Physics Letters 110 (13), 131102, 2017
152017
AlGaN/GaN HEMTs with an InGaN back‐barrier grown by ammonia‐assisted molecular beam epitaxy
S Rennesson, B Damilano, P Vennegues, S Chenot, Y Cordier
physica status solidi (a) 210 (3), 480-483, 2013
142013
Ultrathin AlN‐Based HEMTs Grown on Silicon Substrate by NH3‐MBE
S Rennesson, M Leroux, M Al Khalfioui, M Nemoz, S Chenot, J Massies, ...
physica status solidi (a) 215 (9), 1700640, 2018
122018
Demonstration of critical coupling in an active III-nitride microdisk photonic circuit on silicon
F Tabataba-Vakili, L Doyennette, C Brimont, T Guillet, S Rennesson, ...
Scientific reports 9 (1), 1-9, 2019
92019
Q factor limitation at short wavelength (around 300 nm) in III-nitride-on-silicon photonic crystal cavities
F Tabataba-Vakili, I Roland, TM Tran, X Checoury, M El Kurdi, S Sauvage, ...
Applied Physics Letters 111 (13), 131103, 2017
92017
High quality factor photonic resonators for nitride quantum dots
T Guillet, M Mexis, S Sergent, D Néel, S Rennesson, C Brimont, ...
physica status solidi (b) 249 (3), 449-454, 2012
92012
Strong Coupling of Exciton-Polaritons in a Bulk Planar Waveguide: Quantifying the Coupling Strength
C Brimont, L Doyennette, G Kreyder, F Reveret, P Disseix, F Medard, ...
Physical Review Applied 14 (5), 054060, 2020
62020
Laser damage of free-standing nanometer membranes
Y Morimoto, I Roland, S Rennesson, F Semond, P Boucaud, P Baum
Journal of Applied Physics 122 (21), 215303, 2017
62017
Anomalous DC and RF Behavior of Virgin AlGaN/AlN/GaN HEMTs
H Sánchez-Martín, Ó García-Pérez, S Pérez, P Altuntas, V Hoel, ...
Semiconductor Science and Technology 32 (3), 035011, 2017
62017
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